• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.301-313
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• 2021

Theoretical background for the meaning of various piezoelectric properties can be easily found in a number of textbooks and academic papers. In contrast, how they are actually measured and characterized are rarely described, though this information would be the most important especially to the researchers who just started working on the field. It follows that this report was intended to provide a practical guidance for measuring basic but essential properties of ferroelectric-based piezoelectric materials. The discussion begins with how to measurement dielectric properties such as dielectric permittivity and loss (dissipation factor), followed by piezoelectric properties such as piezoelectric constants, electromechanical coupling factor, and quality factor as well as ferroelectric features, i.e., electric field dependent polarization hysteresis. Though our discussion here is limited to the techniques that are already well-standardized, it is expected to make a seed to be developed into more challenging and creative ones.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.307-307
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• 2007

압전액츄에이터 및 초음파진동자는 전자제품의 소형화 및 경량화, 의료기기, 모바일기기 및 소형로붓의 발전에 힘입어 그 활용범위가 넓게 확장되고 있다. 1960년 Smolenski등에 의해 $A(B_1,B_2)O_3$형 복합 페로브스카이트 구조를 갖는 강유전성 세라믹스에 대한 연구가 시작된 이래 $Pb(Co,Nb)O_3-Pb(Zr,Ti)O_3$, $Pb(Zn,Nb)O_3-Pb(Zr,Ti)O_3$, $Pb(Mg,Nb)O_3-Pb(Zr,Ti)O_3$ 등 3성분계 세라믹스의 유전, 압전 및 강유전 특성에 대한 많은 연구가 진행되어 왔다. 그러나 압전성이 우수한 세라믹스들은 Pb가 포함되어 있기 때문에 $1000^{\circ}C$ 이상에서 PbO가 급격하게 휘발되는 성질에 따라서 조성의 변동이 생겨 재현성이 어려우며 이를 방지하기 위하여 과잉 PbO를 첨가시키기 때문에 환경오염뿐만 아니라, 경제적인 측면에서도 많은 문제점을 가지고 있다. 소결조제를 이용한 산화물 첨가법은 PbO의 휘발을 억제하는 저온소결 방법중 가장 효과적인 방법으로 알려져 있다. 따라서, 본 연구에서는 적층형 압전액츄에이터로 사용하기위한 저온소결 압전세라믹스를 개발하기 위하여 PZN-PZT세라믹스에 $Li_2CO_3$, $Bi_2O_3$, CuO 를 소결조제로 사용하여 $Li_2CO_3$의 첨가량 변화에 따른 압전 및 유전 특성을 관찰하였다.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.86-88
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• 2004

본 연구에서는 고주파 이동통신 기기용 칩형 세라믹 안테나의 사용을 위한 저유전율 및 저온동시소성이 가능한 CaO-B2O3-SiO2계 유리를 제조하고자 하였다. 제조된 CaO-B2O3-SiO2계 유리는 열분석을 통하여 낮은 연화온도를 갖는 안정한 유리조성을 선정하였다. 유리분말을 이용하여 성형된 샘플은 소결온도에 따른 특성을 조사하였다. 소결온도변화에 따라 유전율(${\epsilon}_r$)은 4-4.5값을 나타냈으며, 유전손실(tan$\delta$)은 <$0.1\%$ 보였으나, 품질계수(Q$\times$f)는 큰 변화폭을 보였다.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.87-89
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• 2005

$Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and ferroelectric properties of the BYT thin films. Increasing the annealing temperature, the peak intensity of (117) increased and c-axis orientation decreased. The BYT thin films crystallized well at $600^{\circ}C$ for 30min. No secondary phases observed in the XRD pattern. At annealing temperature of $700^{\circ}C$, the thin films had no cracks and the grain was uniform. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The remnant polarization of the $Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$ capacitor reached $1.8uC/cm^2$ at an applied field about 400kV/cm. The BYT thin films can be used as capacitors in Ferroelectric Random Access Memory device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.801-805
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• 2013

In this study, electrocaloric effects of Pb-free $(Ba_{0.85}Ca_{0.15})(Ti_{0.92}Zr_{0.08})O_3$ ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $140^{\circ}C$. The remnant polarization $P_r$ and coercive field $E_c$ were decreased with increasing temperature. The temperature change ${\Delta}T$ by the electrcaloric effect was calculated by Maxwell's relations, and reached the maximum of ~0.15 at $120^{\circ}C$ under applied electric field of 30 kV/cm.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.91-97
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• 2004

PBT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk-PZT target containing $5\%$-excess PbO was used. After PZT thin films had been deposited at room temperature, remaining portion of the thin film was formed by in-situ process. The ferroelectric perovskite phase was formed at $650^{\circ}C$. The leakage current property was improved dramatically by 2-step sputtering, and in the sample containing optimum thickness of room temp.-layer very low leakage current of $2{\times}10^{-7}A/cm^2$ was shown. As a result of the investigation on the leakage current mechanism, the electrical conduction mechanism in all PZT thin films formed by several conditions was confirmed as bulk-limited mechanism.