• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.599-604
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• 2002

In this paper, a digital potentiometer is used as a load resistor of a wireless optical differential detector with a polarizer, to improve the noise reduction capability. In this structure, the noise voltages of the two photodiodes are made equal by controlling a digital potentiometer and the optical noise is cancelled out. With a digital potentiometer, the signal to noise ratio is enhanced by about 23 dB.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.407-407
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• 2011

태양전지에서 Fill Factor를 저하시키는 직렬저항의 성분들은 베이스저항, 에미터 저항, contact 저항, finger 저항, busbar 저항 등이 있다. 각각의 저항 성분은 전극의 width및 height, 그리고 전극과 전극 사이의 spacing을 가변함에 따라 각기 다른 값을 나타내는데, 낮은 직렬저항 값을 달성하기 위해 전극의 면적을 크게 하는 것이 바람직하지만, 이는 cell의 shading loss를 증가시켜 cell의 JSC를 저하시킨다. 그러므로 cell의 면적과 전면 에미터의 면저항을 고려하여 shading loss와 직렬저항을 최소화 하는 최적의 전면 전극의 설계가 중요하다. 본 논문에서는 시뮬레이션을 통해 전면 전극의 height, spacing 및 width를 가변하여 1 by 1, 2 by 2, 3 by 3의 cell 면적에서의 전면 전극의 설계를 최적화 하였다. 시뮬레이션 결과 각각의 cell면적에서 단위면적당 저항 값이 500 $m{\Omega}$ 이하, shading loss가 4% 미만인 전극을 설계하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.414.1-414.1
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• 2016

스크린 프린팅법을 이용한 태양전지의 전극은 주로 고가의 은을 사용하기에 태양전지의 저가화에 한계를 가지고 있다. 고효율 결정질 실리콘 태양전지의 원가절감의 문제 해결방안으로 박형 웨이퍼 연구개발이 많은 관심을 받고 있다. 본 연구에서는 은 전극을 대체 할 수 있는 니켈/구리 전극을 사용하였고, 박형 웨이퍼에서도 전극 공정이 가능한 도금법을 사용하여 전극을 형성 하였다. 니켈 전극형성은 광유도 도금법(Light-Induced Plating), 구리 전극형성은 광유도전해도금법(Light-Induced Electro Plating)을 이용하여 실험을 진행 하였다. 니켈 광유도 도금 공정시 공정시간 3 ~ 9분까지 가변하였다. 니켈실리사이드 형성 위해 열처리 공정을 $300{\sim}450^{\circ}C$까지 가변하였고 유지시간 30초 ~ 3분까지 가변하여 실험을 진행하였다. 니켈 도금 수용액의 pH 6 ~ 7.5까지 가변하여 실험하였다. 구리 광유도 전해도금 공정 전류밀도를 $1.6mA/cm^2{\sim}6.4mA/cm^2$까지 가변하여 실험을 진행 후, 전류밀도 $3.2mA/cm^2$로 시간 5 ~ 7분까지 가변하여 실험 하였다. 니켈 도금 공정 시간 5분, 니켈실리사이드 형성 열처리 온도 $350^{\circ}C$, 유지시간 1분에서 DIV(Dark I-V) 분석결과 가장 적은 누설전류를 확인하였다. 니켈 도금액 pH 6.5에서 니켈입자 및 구리입자의 균일성이 좋은 최적의 조건임을 확인하였다. 구리 도금 공정 전류밀도 $3.2mA/cm^2$, 시간 5분에서 TLM(Transmission Line Method) 측정결과 접촉 저항 $0.39{\Omega}$과 접촉 비저항 $12.3{\mu}{\Omega}{\cdot}cm^2$의 저항을 확인하였다. 도금법을 이용하여 전극을 형성함으로써 접촉저항 및 접촉 비저항이 낮고 전극 품질이 향상됨으로서 셀의 전류밀도 $42.49mA/cm^2$를 얻을 수 있었다.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.98-107
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• 2016

An analytical comparison of a synthetic memristor emulator and a M-R mutator-based memristor emulator has been performed. Memristor is an electrical element with the characteristic of variable resistance. It is called the fourth fundamental electrical element following resistor, capacitor, and inductor. Memristor emulator is a circuit which implements the feature of variable resistance via the composition of various electrical devices. It is an essential circuit to study memristor characteristics during the time before it is commercially available. There are two representative memristor emulators depending upon their implementation methods. One is a memristor emulator which is synthesized via combining various electrical devices and the other one is M-R mutator-based memristor emulator implemented by extracting resistance from a nonlinear device. In this paper, implementation methods of these two memristor emulators are studied and their differences are investigated by analysing their characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.12
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• pp.6046-6051
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• 2012

In this paper, we designed a Chua's chaotic circuit using transcondcutor based nonlinear resistor for secure communication applications. Proposed chaotic circuit consist of passive devices such as L and C, a MOS based variable resistor and a transcondcutor based Chua's diode. From SPICE simulation results, the proposed circuit showed variable chaotic dynamics through time waveforms, frequency analysis and phase plots.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.6
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• pp.8-15
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• 2003

In this paper, the issue of the differential ring oscillator in designing low phase noise is linearity improvement of delay cell's load resistor. A novel differential delay cell that improves on the Maneatis load is proposed. The linearity improvement of load resistor results in lower phase noise in ring oscillator. For comparison of the phase noise characteristics, Ali Hajimiri's phase noise model is used. In order to have a low ISF(impulse sensitivity function), it is important to have a symmetry between rise time and fall time of oscillation waveform. The ISF value of ing oscillator based on the proposed delay cell is lower than that of the existing ring oscillators. Due to this result, the phase noise is improved by 2~3dBc/Hz for the same power dissipation and oscillation frequency.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.9
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• pp.1202-1202
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• 2001

• Journal of the Korean Institute of Intelligent Systems
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• v.26 no.4
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• pp.273-278
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• 2016

In this paper, chaotic circuit of the Lorentz system using multipliers, operational amplifiers, capacitor, fixed resistor and variable resistor for control has been designed in a electronic circuit. Through PSPICE program, electrical characteristics such as time waveforms, frequency spectra and phase attractors analyzed. And in the special area ($10{\sim}100k{\Omega}$) of the $500k{\Omega}$ control variable resistor, the circuit showed chaotic dynamics. Also, we implemented the circuit in a electronic hardware system with discrete elements. Measured results of the circuit coincided with simulated data.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.6
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• pp.1109-1114
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• 2003

In this paper, the electric characteristic of the SGPS with slot in the ground plane is similar to the parallel resonant circuit. When the slot length in SGPS is equal to the half wavelength of specific frequency, the characteristic of SGPS represent the large attenuation at the specific frequency. We found out the relation between attenuation and resistor on the slot in SGPS and we designed the variable attenuator for MMIC using the variable resistor. This attenuator can be applied to AGC circuit in transceiver if the PIN diode is used replace for resistor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.10
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• pp.2066-2070
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• 2009

A voltage controlled attenuator using a PIN diode and two resistors of the $\pi$-type fixed attenuator is described in this paper. The proposed variable attenuator operating for a fixed attenuation range has a good input VSWR and a low intermodulation signal. For the low phase shift, a PIN diode is connected with open stub for the purpose of phase compensation. The stub for phase compensation is calculated by the Deloach method and the related circuit theory. This attenuator is easily fabricated on the microstrip and can be normally used in fine control circuits within small attenuation range. The fabricated attenuator for 2110~2170 MHz frequency band has about 4 dB of an attenuation range, $2^{\circ}$ of phase variance, and -20 dB of S11 according to the input voltage from 0 to 2.7 V.