• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.125-125
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• 2012

물리증착(physical vapor deposition; PVD)은 진공 또는 특정 가스 분위기에서 고상의 물질을 기화시켜 기판에 피막을 형성하는 방법으로 증발과 스퍼터링 그리고 이온플레이팅 등이 있다. PVD 방법으로 박막을 제작하면 대부분의 박막은 주상정 구조로 성장하게 된다. 이러한 주상정의 조직을 제어하는 방법으로 빗각 증착(oblique angle deposition; OAD) 기술이 있다. OAD는 타겟(증발원)에 대해서 기판을 평행하게 배치하는 일반적인 코팅방법과는 달리 기판의 수직성분과 타겟의 수직성분이 이루는 각도가 0도 이상이 되도록 조절하여 기판을 기울인 상태로 코팅하는 방법을 말한다. OAD 방법을 이용하면 기판으로 입사하는 증기가 초기에 생성된 핵(seed)에 의해 shadowing이 발생하면서 증기가 수직으로 입사하는 normal 증착과는 다른 형상의 성장 조직이 만들어지게 된다. 본 논문에서는 OAD 방법을 이용하여 Al과 TiN 박막을 제조하고 그 특성을 비교하였다. Al 박막은 UBM (Un-Balanced Magnetron) 스퍼터링 소스를 이용하여 빗각을 각각 0, 30, 45, 60 및 90도의 각도에서 강판 및 실리콘 웨이퍼 상에 시편을 제조하되 단층 및 다층으로 시편을 제조하고 치밀도와 함께 조도와 반사율을 비교하고 염수분무시험을 이용하여 내식성을 평가하였다. TiN 박막은 Cathodic Arc 방식을 이용하되 Al 박막과 동일한 방법으로 코팅을 하고 내식성 및 경도 등의 특성을 비교하였다. TiN 박막은 경사각이 커지면서 경도가 낮아졌으나 바이어스 전압을 이용하여 다층으로 제조함에 의해 경도는 유지하면서 modulus를 낮출 수 있어서 박막의 신뢰성을 나타내는 H3/E2 값은 증가함을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.191.2-191
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• 2002

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.18-21
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• 1996

SiO 7f the SiO/TiN film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it\`s relatively low specific resistance. In this study we investigated it\`s electrical and optical characteristics to determine refractive index, absorption coefficient and Permittivity. The films are differently fabricated in thickness method for this experiment.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• 한국표면공학회지
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• 제40권1호
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• pp.1-5
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• 2007

Quaternary TiZrAlN nanocomposite thin films were synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS), and their microstructure and mechanical characteristics were examined. The grain refinement of the TiZrAlN nanocomposite thin films was controlled by adjusting the $N_2$ partial pressure. The hardness of the film varied with the $N_2$ partial pressure and the maximum value was obtained approximately 47 GPa. It was also confirmed that there is a critical value of the grain size($d_c$) to need maximum hardness.

• 센서학회지
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• 제23권6호
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• pp.420-424
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• 2014

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

• 한국표면공학회지
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• 제34권5호
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• pp.435-444
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• 2001

WC-( $Ti_{1-x}$ A $l_{x}$) N coatings of constant changing Al concentration were deposited on S45C substrates by high-ionization sputtered PVD method. The Al concentration could be controlled by using evaporation source for Al and fixing the evaporation rate of the metals (i.e, WC- $Ti_{0.86}$A $l_{0.14}$N, WC- $Ti_{0.72}$A $l_{0.28}$N, and WC- $Ti_{0.58}$A $l_{0.42}$N). The corrosion behavior of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings in a deaerated 3.5% NaCl solution was investigated by electrochemical corrosion tests and surface analyses. The measured galvanic corrosion currents between coating and substrate indicated that WC- $Ti_{0.72}$A $l_{0.28}$N coating showed the best resistance of the coating tested. The results of potentiodynamic polarization tests showed that the WC- $Ti_{0.72}$A $l_{0.28}$N coating deposited with 32W/c $m^2$ of Al target revealed higher corrosion resistance. This indicated that the WC- $Ti_{0.72}$A $l_{0.28}$N coating is effective in improving corrosion resistance. In EIS, the WC- $Ti_{0.72}$A $l_{0.28}$N coating showed one time constant loop and increased a polarization resistance of coating ( $R_{coat}$) relative to other samples. Compositional variations of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings were analyzed by EDS and XRD analysis was performed to evaluate the crystal structure and compounds formation behavior. Surface morphologies of the films were observed using SEM and AFM. Scratch test was performed to measure film adhesion strength.strength. adhesion strength.strength.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• 한국결정성장학회지
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• 제19권6호
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• pp.298-304
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• 2009

고온 열수송시스템용 구조재료인 Inconel 617의 표면 처리에 따른 고온물성 개선에 대한 연구를 수행하였다. 표면처리 방법으로는 Inconel 617 기판 상에 급속가열(RTP) 및 수열처리를 통한 균질산화물 형성과 물리적 기상증착법(Arc discharge)법에 의한 TiAlN(두께 약 $2{\mu}m$ 박막 코팅을 적용하였다. 불균질 산화물($Cr_2O_3$) 형성 억제에 미치는 표면처리의 효과 및 표면 미세구조가 물성에 미치는 영향에 대해 알아보기 위해 표면처리된 Inconel 617 시편들을 $1000^{\circ}C$, 대기중에서 열처리 하였으며, 열처리된 시편들에 대해 고온 상형성 및 미세구조를 비교 분석하였다. RTP와 수열처리를 통한 표면산화물 형성보다는 TiAlN 박막 증착을 통한 보호피막의 형성이 Inconel 617 표면에서 생성되는 불균일 $Cr_2O_3$ 막의 성장을 효과적으로 억제할 수 있어서 더 균질한 미세구조와 가장 우수한 내마모 특성을 나타내었다.