• 마이크로전자및패키징학회지
• /
• 제28권3호
• /
• pp.33-38
• /
• 2021

최근 유연 디스플레이에 관한 대중의 관심이 증대됨에 따라 롤러블(rollable), 폴더블(foldable) 디스플레이와 같은 우수한 폼 팩터(form factor)를 지닌 차세대 유연(flexible) 디스플레이가 주목받고 있다. 유연 디스플레이의 기계적 신뢰성 확보 측면에서, 내부 절연막으로 활용되는 실리콘 질화물(SiN_x) 박막은 구동 중 발생하는 응력에 매우 취약하므로 기계적 물성을 정확히 파악하여 파손을 예측하고 패널의 전기적 단락을 방지하는 것이 중요하다. 본 논문에서는, ~130 nm, ~320 nm 두께의 SiN_x 박막 박막 상부에 ~190 nm 두께의 유기 나노 보강층(PMMA, PS, P3HT)을 코팅하여 이중층 구조로 인장함으로써 매우 취성한 SiN_x 박막의 탄성 계수와 인장 강도 및 연신율을 측정하는 데 성공하였다. 챔버 압력 및 증착 파워를 조절한 공정 조건(A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W)을 통해 제작된 ~130 nm SiN_x 의 탄성계수는 A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa로, ~320 nm SiN_x는 A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa로 측정되었다. 결과적으로, 동일 공정 조건 하에서 SiN_x 박막의 두께가 증가할수록 탄성 계수가 증가하는 경향을 확인하였으며, 유기 나노 보강층을 활용한 인장 시험법은 파손되기 쉬운 취성 박막의 기계적 물성을 높은 정밀도로 측정하는 데 효과적이었다. 본 연구에서 개발된 방법은, 취약한 디스플레이용 박막의 정량적인 기계적 물성 파악을 가능케하여 강건한 롤러블, 폴더블 디스플레이의 설계에 이바지할 수 있을 것으로 기대한다.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
• /
• pp.55-55
• /
• 2007

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
• /
• pp.480-481
• /
• 2000

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.88-90
• /
• 2005

Boron Phosphide films were deposited on (111) Si substrate at 650 $^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 m$\ell$/min for $B_2H_6$, 60 m$\ell$/min for $PH_3$ and 1 $\ell$/min for $N_2$. After as grown the films were insitu annealed for 1hour in N$_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at 650$^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry.

• Progress in Superconductivity
• /
• 제10권1호
• /
• pp.35-39
• /
• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• 센서학회지
• /
• 제16권3호
• /
• pp.240-245
• /
• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
• /
• pp.39-39
• /
• 2008

• 열처리공학회지
• /
• 제22권5호
• /
• pp.307-311
• /
• 2009

In this study, TiCrN films were deposited on STS 316 Land Si (100) wafer by inductively coupled plasma (ICP) assisted D.C. magnetron sputtering. The effect R.F. power for ICP discharge on the mechanical properties of TiCrN films was investigated. XRD, XPS and FE-SEM were used for the structure analysis. Also the Micro-Knoop hardness tester and profilometer were used for measuring hardness of coatings and film stress respectively. As increasing the R.F. power for ICP discharge, thickness of coating was decreased from 1633 nm to 1288 nm but hardness was increased about $Hk_{5g}$ 4200 at 400 W. All of the XRD patterns showed (111), (200) and (220) peaks of TiCrN films. Surface morphology was studied using the profilometer. FE-SEM was used to know morphology and cross-section of the films. Structure of the films was changed dense as increased ICP power.

• 열처리공학회지
• /
• 제12권3호
• /
• pp.199-205
• /
• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
• /
• pp.39-39
• /
• 2003