• Bulletin of the Korean Mathematical Society
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• v.36 no.2
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• pp.337-342
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• 1999

M. Cohen and S. Montgomery showed that a Maschke-type theorem for the smash product, which unlike the corresponding result for group actions, does not require any assumptions about the characterstic of the algebra. Our purpose in this paper is a Maschke-type theorem for the graded smash coproduct C⋊kG: let V be a right C⋊kG-comodule and W a C⋊kG-subcomoduleof V which is a C-direct summand of V. Then W is a C⋊kG-direct summand of V. Also this result is equivalent to the following : let V be a graded right C-comodule and W a graded subcomodule of V which has a complement as a C-subcomodule of V. Then W has a graded complement.

• Journal of KIISE
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• v.42 no.2
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• pp.213-219
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• 2015

Simulation is used these days to verify the hypothesis or the new technology. In particular, National Defense Modeling & Simulation (M&S) is used to predict wartime situation and conduct the military training. National Defense M&S can be divided into three parts, live simulation, virtual simulation, and constructive simulation. Live simulation is based on the real environment, which allows more realistic sumulation; however, it has decreased budget efficiency, but reduced depictions of reality. In contrast, virtual and constructive simulations which are based on the virtual environment, have increased budget efficiency, but reduced depictions of reality. Thus, if the three parts of the M&S are combined to make the L-V-C combined environment, the disadvantages of each simulation can be complemented to increases the quality of the simulation. In this paper, a method of interworking heterogeneous simulation middeware for L-V-C combined environment is proposed, and the test results of interworking between Data Distribution Service (DDS) and High Level Architecture (HLA) are shown.

• Journal of Environmental Science International
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• v.5 no.2
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• pp.179-185
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• 1996

This study was conducted to investigate the effects of environmental factors such as temperature, salinity, pH, and UV light on-the survival of life-threatening Vibrio vulnificus. In the temperature range of 15 to $25^{\circ}C$, the numbers of V. vulnificus incieased during the 6-day incubation, but outside this range, the survival of V. vulnificus was poor. Incubation between 1 and $10^{\circ}C$ showed that V. vulnifcts survived poorly below $10^{\circ}C$. At sal:nities between 5 and 25ppt, the numbers of V. vulnificus increased or remained unchanged for 6-day. At salinities above this range, the numbers of V. vulnificus decreased. The optimal pH range was 6.5 to 8.0 and outside this range, the survival ratio of V. vulnificus was small. At 15-and $25^{\circ}C$, UV radiation was bactericidal for cultures of V, vulnificus. The counts of V. vulnificus were reduced approximately 10, 000-fold after 2h of UV light treatment at both temperatures. Above results mowed 1ha't environmental factors were effective on the survival of V. vulniucus in the environment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.284-284
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• 2012

본 연구에서는 다이오드 소자의 온도 증가에 따른 C-V 특성을 분석하였다. 180 kHz 주파수 조건에서 온도는 300 K에서 450 K까지 50 K 간격으로 가변하였다. 측정 결과 reverse bias 영역에서는 커패시턴스의 온도 의존성이 없었으나, forward bias 영역에서는 온도가 증가함에 따라 동일 전압에서의 커패시턴스가 증가하였다. 이로부터 온도가 증가 할수록 소자가 반전(inversion) 상태에서 축적(accumulation) 상태로 빨리 전환함을 확인하였으며, 1/C2-V 그래프로부터 온도 증가에 따른 전위장벽(Built-in potential, Vbi) 감소를 확인하였다. 전위장벽은 0.63 V에서 0.31 V로 온도 상승에 따라 약 0.1 V씩 감소하였다. 이는 energy band diagram에서 p-type 영역과 n-type 영역의 energy band 차가 감소해 공핍층 영역의 폭이 좁아짐을 의미한다. 공핍층의 두께 감소로 다이오드 전류의 급격한 증가뿐 아니라 위에서 언급한 바와 같은 C-V 특성을 보였다. 이번 연구에서는 기존의 보편화 된 I-V 측정을 통한 다이오드 소자 분석과는 달리 온도 변화에 따른 C-V 분석을 통해 소자 내부의 전위 장벽 및 공핍층 폭 감소에 따른 소자 특성 변화를 분석하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.1-6
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• 2010

In this paper, RF Capacitance-Voltage(C-V) curve of short-channel MOSFET has been extracted from the room temperature to $225^{\circ}C$ using a RF method based on measured S-parameter data, and its high-temperature dependent characteristics are empirically modeled. It is observed that the voltage shift according to the variation of temperature in the weak inversion region of RF C-V curves is lower than the threshold voltage shift, but it is confirmed that this phenomenon is unexplainable with a long-channel theoretical C-V equation. The new empirical equation is developed for high-temperature dependent modeling of short-channel MOSFET C-V curves. The accuracy of this equation is demonstrated by observing good agreements between the modeled and measured C-V data in the wide range of temperature. It is also confirmed that the channel capacitance decreases with increasing temperature at high gate voltage.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• East Asian mathematical journal
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• v.19 no.1
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• pp.1-15
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• 2003

Some new sufficient conditions for the unweighted $\v{C}eby\v{s}ev's$ inequality for real sequences to hold and related results are given. Applications for the moments of guessing mappings are also provided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.321-324
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• 2018

Recently, the evolution of V2X (Vehicle to Everything) technology is accelerating. In particular, it can be seen that C-V2X (Cellular V2X) technology and services combined with mobile telecommunication network are developing rapidly. However, in Korea, e-Call and emergency communication services are inferior to the developed communication technologies and the proportion of vehicles arriving at Golden Hour is considerably low. Therefore, this paper designed the communication architecture with C-V2X and Android operating systems, and presented ways to improve existing e-Call services using V2N (Vehicle to Nomadic Device) communication based on it.

• Journal of Microbiology and Biotechnology
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• v.18 no.6
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• pp.1186-1190
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• 2008

Single-chain Fv (scFv) antibody against c-Met is expected to be employed in clinical treatment or imaging of cancer cells owing to the important biological roles of c-Met in the proliferation of malignancies. Here, we show that the productivity of scFv against c-Met in Escherichia coli is significantly influenced by the orientation of its variable domains. We generated anti-c-Met scFv antibodies with two different domain orders (i.e., $V_L$-linker-$V_H$ and $V_H$-linker-$V_L$), expressed them in the cytoplasm of E. coli trx/gor deleted mutant, and compared their specific activities as well as their productivities. Productivity of total and functional anti-c-Met scFv with $V_H/V_L$ orientation was more than five times higher than that with $V_L/V_H$ format. Coexpression of DsbC enhanced the yield of soluble amounts of anti-c-Met scFv protein for both constructs. The purified scFv antibodies of the two different formats exhibited almost the same antigen-binding activities. We also compared the productivities and specific activities of anti-c-Met diabodies with $V_H/V_L$ or $V_L/V_H$ formats and obtained similar results to the case of scFv antibodies.