• Fire Science and Engineering
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• v.20 no.1 s.61
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• pp.1-5
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• 2006

The spontaneous ignition of a flammable matter is a crucial factor for the prevention of a fire. The minimum ignition temperatures of Gasoline and Cenox in $1000{\mu}l$ of a sample were determined to be $340.5^{\circ}C\;and\;368.5^{\circ}C$ respectively. In addition when the time taken for ignition was 1.0 sec, the instantaneous ignition temperatures were $416^{\circ}C\;and\;427^{\circ}C$ respectively. Moreover, the changes in the minimum ignition temperature were small when less than 60 v/v% of Cenox was added, but the changes were great when 80 v/v% or more was added. Therefore, it is hypothesized that, when used as a fuel in the Gasoline engine, the ratio of the mixture of Cenox and Gasoline will be a very important factor.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.156-160
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• 2006

Capacitance versus voltage (C-V) curves of Ge-nanocrystal (NC)-embedded MOS capacitors with and without a single capping Al2O3 layer are characterized in this work. C-V curves of the Ge-NC-embedded MOS capacitor with the A12O3 layer are counterclockwise in the voltage sweeps, which indicates tile presence of charge storages in the Ge NCs by the tunnelling of charge carriers between the Si substrate and the Ge NCs. In the Ge-NC-embedded MOS capacitor without Al2O3 layer, clockwise hysteresis of the C-V curves and leftward shifts of the flat band voltages are observed for the embedded MOS capacitor without the Al2O3 layer. It is suggested that the characteristics of the C-V curves are due to the charge trapping at oxygen vacancies within a SiO2 layer. In addition, the illumination of the white light enhances the lower capacitance part of the C-V hysteresis. The origin for the enhancement is discussed in this paper.

• The Journal of Internal Korean Medicine
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• v.15 no.2
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• pp.148-162
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• 1994

A Literature study was done for identifying the effects of Bloodletting on C.V.A. The major results of the study were as follows. 1. The frequency of points of Bloodletting on C.V.A. were in order Twelve well point, Ship son, Gold SalivaJade Fluid, Paekoe, Chungchung, Sugu, Sosang, Taechu, Wijung, Kwanchung, etc. 2. The frequency of meridians of Bloodletting on C.V.A. were in order Extra-point, Tongmaek-kyong, Su-gworum-Shimpo-Kyong, Susoyang-Samcho-Kyong, Sutaeum-Pye-Kyong, Choktaeyang-Panggwang-Kyong. ete. 3. The frequency of the site of points of Bloodletting on C.V.A. were in order four extremities, face, neck and head, etc. 4. The effects of Bloodletting on C.V.A. is clear away heat and alleviate pain, therapy for waking up a patient from unconsciousness, dredge the meridian passage, expel wind-evil and promote blood circulation, emergency treatment for collapse, etc, 5. The effects of Bloodletting on the early stage of C.V.A. were wake up the patient from unconsciousness by clearing away the heat and The effects of Bloodletting on sequence of C.V.A. were dredge the meridian passage, 6. The frequency of points and meridians of Bloodletting on Hemiplegia were in order Twelve well point, Kyonjong, Extra-point, Chok soyang-Tam-Kyong, etc. 7. The frequency of points and meridians of Bloodletting on Aphasia were in order Gold Saliva Jade Fluid, Amun, Extra-point, Tongmaek-Kyong, etc. 8. The frequency of points and meridians of Bloodletting on Quadriplegia were in order Ship son, Twelve well point, Koktaek, Wijung, Extra-point, Chok soyang-Tam-Kyong, etc. 9, The frequency of points and meridians of Bloodletting on Vertigo were in order Four Gods Cleverness, Tuyu. Chanjuk, Paekoe, Taeyang, Extra-point, Yang-Kyong, etc. 10. The frequency of points and meridians of Bloodletting on Headache were in order Taeyang, Paekoe, Taechu, Extra-point, Tongmaek-Kyong, Yang-Kyong, etc. 11. The points and meridians of Bloodletting on Bells palsy were Chichang, Hyopko in Yangmyong-Kyong.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.62-71
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• 2002

An intergral C-V converter is proposed to solve the nonlinearity problem of capacitive pressure sensors. The integral C-V converter consists of a switched-capacitor integrator and a switched-capacitor differential amplifier. It converts the sensor capacitance change which is inversely proportional to an applied pressure into a linear voltage output. Various PSPICE simulations prove that the convertor has excellent characteristics, such as low nonlinearity less than 0.01%/FS and low sensitivity to parallel offset capacitance and parasitic capacitance for the displacement range of sensor diaphragm set to 0 ${\sim}$ 90% of the initial distance between the electrodes in the simulation. We also show that the offset compensation and the gain trimming are easily achieved with the integral C-V converter.

• Journal of the Korean Institute of Landscape Architecture
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• v.40 no.3
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• pp.91-98
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• 2012

The objective of this study was to analyze the effects on the growth of Sedum species by different soil in shallow green roof module system, and to find the best soil mixture. The experiment used a module system, 7cm soil depth, five types of soil mixture ratio, and it was carried out on 7th Hoar rooftop in December of 2010. The growth status of the plant showed the most superior of the P5C7P2V1, next P10C1P2V1 and P1P1V1, P1 and C1 showed very poor growth. This result showed that the soil mixture ratio (P5C7P2V1) in green roof module system with minimum management can contribute to the proliferation of rooftop greening in urban settings.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.6
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• pp.534-542
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• 2003

Small electric motors in an automobile perform various tasks such as engine cooling, pumping, HVAC etc. At present, most of them are DC motors supplied by 12V or 24V batteries. However, DC motors suffer from low efficiency, life cycles and reliability. Therefore, there is a growing interest in substituting DC motors for advanced at motors including switched reluctance motors(SRM). Although there are several other forms SRM convertors, they are either unsatisfactory to the control performance or unsuitable for the 12V battery source. Especially, a conventional asymmetric converter of SRM provides the best flexible and effective control to the current waveform of SRM, but it has the most switches and produces conducting voltage drops across two power switches during SRM operation. For automotive applications with a 12V battery source, this circuit is inadequate. For considering the requirement for effective operation and simple structure of converter in the limited internal circumstance of automobiles, the author inclines toward selecting Modified C-dump converter and Energy efficient c-dump converter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Proceedings of the Korean Magnestics Society Conference
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• 1991.05a
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• pp.73-74
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• 1991

The films with ferromagnetic fine particles dispersed in nonmagnetic matrix, such as $Fe-Al_2O_3$ and Fe-Cu have been studied for use of magnetic recording medium, optically device and sensor. Their magnetic properties depend strongly on structural parameter such as size and volume fraction of ferromagnetic particles. Fe-Cr-Ni alloy sputtered films also have microstructure with ferromagnetic -- b.c.c phase and nonmagnetic f.c.c phase grains. Magnetic properties of these films depend strongly on such a unique structure. These are depend on the ratio in volume of ferromagnetic particles to nonmagnetic ones $V_F/V_N$, the saturation magnetization Ms increased with increase of $V_F/V_N$. The coercivity Hc of the as-deposited films took maximum value of about 200 Oe at adequate $V_F/V_N$ and then Ms and Squareness S were 500 emu/cc and 0.5, respectively.(omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.298-298
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• 2012

본 연구에서는 Bias Temperature Stress (BTS) 측정을 통한 다층세라믹커패시터(Multi-Layer Ceramic Capacitor, MLCC) 소자 분석에 대한 연구를 진행하였다. BTS 분석은 소자 내부에 존재하는 Na+, K+ 등의 mobile charge 검출을 위한 방법으로 positive bias와 negative bias stress에 따른 C-V 특성 곡선으로부터 mobile charge의 정량적 해석이 가능하다. 실험 결과 positive bias stress 후의 C-V 특성 곡선이 stress 전 C-V 특성 곡선과 비교해 negative bias 영역으로 0.0376 V 만큼 shift 하였다. 또한 수식(QM = $Cox{\cdot}{\triangle}V$)으로부터 $1.7{\times}1,011$개의 mobile charge가 존재함을 확인하였다. 본 연구는 MLCC 소자 내의 금속 오염물 존재 여부에 따른 소자의 전기적 특성 변화 분석을 위해 진행되었으며, BTS 분석은 반도체 소자 뿐 아니라 본 연구에서와 같이 커패시터 소자의 결함 여부 판단에도 이용 가능함을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.