• Title/Summary/Keyword: $ZrO_2$-구조

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Ferroelectric properties of the $Ba(La_{1/2}Nb_{1/2})O_3-Pb(Zr_yTi_{1-y})O_3$ceramics with $PbZrO_3$ contents (투광성 $Ba(La_{1/2}Nb_{1/2})O_3-Pb(Zr_yTi_{1-y})O_3$ 세라믹의 $PbZrO_3$조성에 따른 강유전 특성)

  • 류기원;이성갑;배선기;이영희
    • Electrical & Electronic Materials
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    • v.6 no.3
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    • pp.241-247
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    • 1993
  • 본 연구에서는 투광성 0.085Ba(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- 0.915Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(0.45.leq.y.leq.0.70)세라믹을 2단 소성법으로 제작한 후, PbZr $O_{3}$조성 및 온도에 따른 구조적, 강유전적특성을 측정하였다. XRD측정 결과, PbZr $O_{3}$조성이 감소할수록 결자상수 및 단위격자 체적은 감소하였으며 시편의 결정구조는 입방정계에서 능면체정계, 정방정계로 변화되었다. 8.5/60/40시편의 경우 포화분극, 잔류분극 및 항전계가 각각 33.28[.mu.C/$cm^{2}$], 4.15[kV/cm]로 전형적인 메모리 특성을 나타내었으며 PbZr $O_{3}$조성이 증가함에 따라 강유전 이력곡선은 slim loop특성을 나타내었다. 잔류분극은 온도가 증가함에 따라 감소하였으며 특히 PE-FE상경계 부근에 위치한 조성의 경우, 상전이 온도 이하의 온도에서 급격히 감소하는 경향을 나타내었다.다.

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Cation Ordering and Microwave Dielectric Properties of Complex Perovskite Compounds $La(Mg_{1/2}Ti_{1/2})O_3$ and $La(Mg_{1/2}Zr){1/2})O_3$ ($La(Mg_{1/2}Ti_{1/2})O_3$$La(Mg_{1/2}Zr){1/2})O_3$에서의 양이온 규칙과 고주파 유전특성)

  • 조서용;고경현;홍국선;박순자
    • Journal of the Korean Ceramic Society
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    • v.34 no.3
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    • pp.330-336
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    • 1997
  • 1:1 복합 페로스카이트 물질인 La(Mg1/2Ti1/2)O3 and La(Mg1/2Zr1/2)O3의 양이온 규칙 존재와 고주파 유전특성을 x선 회절과 회로망분석기를 사용하여 조사하였다. 기존의 연구에서는 두 물질 모두 양이온 규칙이 없으며 입방정 구조를 갖는다고 보고되었지만, 본 연구에서의 x선 분석에서는 양이온 규칙을 나타내는 초격자회절선과 비입방정 구조를 의미하는 기본회절선의 split이 발견되었다. 고주파 영역에서의 유전율은 La(Mg1/2Ti1/2)O3의 경우 29,La(Mg1/2Zr1/2)O3는 24, 품질계수(Q*f)는 각각 73000, 49000이다. 공진주파수 온도계수는 La(Mg1/2Ti1/2)O3의 경우 - 65ppm/$^{\circ}$C,La(Mg1/2Zr1/2)O3는 -80ppm/$^{\circ}$C로 음의 값을 가진다.

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Study on Phase Relation and Synthesis of Pyrochlore in the System of Ca-Ce-Zr-Ti-O (Ca-Ce-Zr-Ti-O System에서의 파이로클로어 합성 및 상관계에 대한 연구)

  • Chae Soo-Chun;Bae In-Kook;Jang Young-Nam;Yudintsev S.V.
    • Economic and Environmental Geology
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    • v.37 no.6 s.169
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    • pp.603-612
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    • 2004
  • Pyrochlore is known as one of the most promising materials for the immobilization of radionuclide in high level waste. This study included the synthesis, phase relation and characteristics of $pyrochlore(CaCeZr_xTi_{2-x}O_{7,\;x=0.2\~2.0)$ in the system of Ca-Ce-Zr-Ti-O. Using the CPS(Cold pressing and sintering) method, the mixtures of $CaCO3_,\;CeO_2,\;ZrO_2\;and\;TiO_2$ oxides were pressed, and sintered at $1100\~1600^{\circ}C$ for 20 hours. The optimal synthetic conditions at various compositions were differed from 1300 to $1600^{\circ}C$ Even in the optimal temperatures, pyrochlore or fluorite coexisted with minor amount of perovskite, $CeO_2\;or\;Ce_{0.75}Zr_{0.25}O_2$. It was confirmed that pyrochlore and fluorite structures were stable at $x\leq0.6\;and\;x\geq1.0$, respectively. Especially, the compositions of pyrochlore or fluorite showed non-stoichiometric compositions in that contents of Ca and Ti were more deficient and those of Zr and Ce were more excess than batch compositions with the increase of x value. These characteristics stemmed from the behavior of elements occupied at eight- and six-coordinated site, and then caused the coexistence of perovskite, $CeO_2\;or\;Ce_{0.75}Zr_{0.25}O_2$ along with pyrochlore or fluorite.

Effect of ZrO2 Buffer Layers for Pt/Bi3.25La0.75Ti3O12/ZrO2/Si (MFIS)-FET Structures (Pt/Bi3.25La0.75Ti3O12/ZrO2/Si (MFIS)-FET 구조를 위한 ZrO2 Buffer Layer의 영향)

  • Kim, Kyoung-Tae;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.439-444
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    • 2005
  • We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

A High Pressure Behavior Study of TiO2-complex (고압 하에서 TiO2 복합체의 거동에 대한 연구)

  • Kim, Young-Ho;Kim, Sungjin;Choi, Jaeyoung
    • Journal of the Mineralogical Society of Korea
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    • v.30 no.3
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    • pp.127-136
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    • 2017
  • High pressure has been applied to check the pressure effect on the powdered $TiO_2$-complex, which was synthesized for ultra-violet rays cutoff and antimicrobial applications. $TiO_2$-complex consists of anatase, rutile and silver chloride. Grain size was determined to be ~34 nm. Both anatase and rutile begin structural phase transitions to $ZrO_2$ (baddeleyite)-type crystal structures at 14~16 GPa, then sustain their phases up to 22.7 GPa. Under decompression to 0.0001 GPa (ambient pressure), rutile transforms to another phase with ${\alpha}-PbO_2$ structure, while anatase retains its high pressure structure upon complete decompression. Silver chloride peaks disappear at the low pressures.

Effect of Ce/Zr Ratios on Ni/CeO2-ZrO2 Catalysts in Steam Reforming of Methane Reaction (Ce/Zr 비율에 따른 Ni/CeO2-ZrO2 촉매가 메탄의 수증기 개질 반응에서 미치는 영향)

  • In Ho Seong;Kyung Tae Cho;Jong Dae Lee
    • Korean Chemical Engineering Research
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    • v.62 no.1
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    • pp.125-131
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    • 2024
  • In this study, synthesized Ni/CexZr1-xO2 catalysts were coated on the surface of honeycomb metalic monoliths to investigate catalytic activity in steam reforming of methane reactions. Supports with varying Ce/Zr ratios were synthesized to observe their behavior in the reforming reaction, and catalysts with Ni contents ranging from 5 wt% to 20 wt% were prepared to analyze the effect of Ni loading contents on catalytic activity. The catalysts were characterized by XRD, BET, TPR, and SEM. The TPR analysis indicated the formation of Ni-Ce-Zr oxide with a strong interaction between the active metal Ni and CeO2-ZrO2 support. The 15 wt% Ni/Ce0.80Zr0.20O2 catalyst exhibited the highest activity and stability in the steam reforming of methane reaction. Catalysts with enhanced activity and stability were synthesized by manufacturing composite materials using excellent oxygen storage and donor properties of CeO2 and the thermal properties of ZrO2.

Influence analysis of heat treatment on crystalline structure of ZrO2-SiO2 glass precursor synthesized by sol-gel method (졸-겔법으로 합성된 ZrO2-SiO2 유리전구체의 결정화구조에 미치는 열처리의 영향분석)

  • Chun, Kyung-Soo
    • Analytical Science and Technology
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    • v.25 no.1
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    • pp.3-6
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    • 2012
  • $xZrO_2-(1-x)SiO_2$ glass precursor with relatively high concentration of zirconium propoxide in metal alkoxide solution was obtained by sol-gel method and then heated at various temperature from 500 to $1,100^{\circ}C$ to investigate the effect of the thermal treatment on the crystalline structure of the glass precursor. Based on X-ray diffraction analysis, the crystalline peak was started to develop at temperature higher than $600^{\circ}C$, and the crystalline phase was considerably increased at $850^{\circ}C$ or higher. With increasing the thermal treatment temperature, the characteristic peaks, such as baddelyite, tetragonal-$ZrO_2$ and zircon, was shown at $35^{\circ}$, $50^{\circ}$ and $60^{\circ}$ of $2{\theta}$.

A study of the microstructures and electrical properties of $ZrO_2$ thin film on Si(100) (증착조건 및 열처리조건에 따른 $ZrO_2$박막의 미세구조와 전기적 특성에 관한 연구)

  • 유정호;남석우;고대홍;오상호;박찬경
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.341-345
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    • 2000
  • We investigated the microstructures and the electrical properties of $ZrO_2$thin films deposited by reactive DC magnetron sputtering on (100) Si with different deposition conditions and annealing treatments. The refractive index of the $ZrO_2$ thin films increased with annealing temperatures and deposition powers, and approached to the ideal value of 2.0~2.2. The $ZrO_2$thin films deposited at the room temperature are amorphous, and the films are polycrystalline at the deposition temperature of $300^{\circ}C$. Both the thickness of the interfacial oxide layer and the root-mean-square (RMS) value of surface roughness increased upon annealing in the oxygen ambient. The Cmax value and leakage current value decreased with the increase of thickness of the interfacial oxide thickness.

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The effect of$ MnO_2$on the electrical properties in Pb(Zr, Ti)$O_3$/-Pb(Mg, Nb)$O_3$ (Pb(Zr, Ti)$O_3$-Pb(Mg, Nb)$O_3$$MnO_2$첨가가 전기적 성질에 미치는 영향)

  • 김현재;조봉희;정형진;박창엽
    • Electrical & Electronic Materials
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    • v.1 no.2
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    • pp.152-161
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    • 1988
  • Pb(Zr, Ti)O$^{3}$-Pb(Mg, Nb)O$^{3}$계에 MnO$_{2}$첨가량을 변화시켜 소결성, 미세구조, 유전상수, 비저항 및 압전특성에 미치는 영향을 XRD, EDAX 및 SEM을 이용하여 미세구조를 관찰하고 실험을 통하여 전기적 성질에 미치는 영향을 밝혔다. 비저항의 변화없이 그레인 성장이 억제되는 $MnO_{2}$의 첨가량은 0.4wt%이었으며 이때 분말의 합성이 촉진되어 소성된 시편의 밀도가 증가하였다. 그러나 고상반응의 범위를 벗어나는 과잉 $MnO_{2}$는 편석이 되어 그레인 경계상에 모임이 확인되었고 또한 기공을 형성하여 밀도를 낮추었다. $Mn^{+4}$$Mg^{+2}$ 와 치환되어 페로브스카이트 구조의 "A" 결핍을 유발하였으며 이것이 비저강을 감소시키는 원인으로 밝혀졌다.감소시키는 원인으로 밝혀졌다.

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