• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.34-37
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• 2007

The crystallographic and magnetic properties of $Fe_{0.9}Zn_{0.1}Cr_2S_4$ have been studied by X-ray diffractometer(XRD), vibrating sample magnetometer(VSM) and $M\"{o}ssbauer$ spectroscopy measurement. The crystal structure was determined by the normal cubic spinel of space group Fd3m and the lattice constant was $a_0=9.9967\;{\AA}$. The specific phenomenon which looks like cusp pattern at 77 K was observed in magnetization corves(ZFC : Zero Field Cooling) under 100 Oe applied field. $N\acute{e}el$ temperature($T_N$) was determined to be 153 K by VSM and $M\"{o}ssbauer$ spectra. The asymmetric 8-line profile has been observed at 4.2 K, which was attributed by the colossal electric quadupole interaction(${\Delta}E_Q$), ${\Delta}E_Q$ has 2.22 mm/s at 4.2 K. The ${\Delta}E_Q$ abruptly decreases around 77 K and then it disappears above 77 K with diminishing of 8-line pattern. The isomer shift $\delta$ at room temperature is 0.48 mm/s relative to Fe metal, which means that the charge state of Fe ions is ferrous in character.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.100-105
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• 2005

$Ni_{0.9}Zn_{0.1}Fe_2O_4$ nanoparticles have been prepared by a sol-gel method. The structural and magnetic properties have been investigated by DTA/TGA, XRD, SEM, and $M\ddot{o}ssbauer$ spectroscopy, VSM. $Ni_{0.9}Zn_{0.1}Fe_2O_4$ powder that was annealed at $300^{\circ}C$ has spinel structure and behaved superparamagnetically. The estimated size of superparammagnetic Ni-Zn ferrite nanoparticle is around 10 nm. The hyperfine fields at 13 K for the A and B patterns were found to be 533 and 507 kOe, respectively. The blocking temperature ($T_B$) of superparammagnetic $Ni_{0.9}Zn_{0.1}Fe_2O_4$ nanoparticle is about 250 K. The magnetic anisotropy constant and relaxation time constant of $Ni_{0.9}Zn_{0.1}Fe_2O_4$ nanoparticle were calculated to be $1.6\times10^6\;ergs/cm^3$ and ${\tau}_0=5.0{\times}10^{-13}$ s, respectively. Also, Temperature increased up to $43^{\circ}C$ within 10 minutes under AC magnetic field of 7 MHz. It is considered that $Ni_{0.9}Zn_{0.1}Fe_2O_4$ powder that was annealed at $300^{\circ}C$ is available for biomedicine application such as hyperthermia, drug delivery system and contrast agents in MRI.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1697-1702
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• 2014

A novel complex [$Zn(phen)(o-AB)_2$] [phen: 1,10-phenanthroline o-AB: o-aminobenzoic acid] was synthesized and characterized by elemental analysis and X-ray diffraction single-crystal analysis. The crystal crystallizes in monoclinic, space group P2(1)/c with $a=7.6397(6){\AA}$, $b=16.8761(18){\AA}$, $c=17.7713(19){\AA}$, ${\alpha}=90^{\circ}$, ${\beta}=98.9570(10)^{\circ}$, ${\gamma}=90^{\circ}$, $V=2.2633(4)nm^3$, Z = 4, F(000) = 1064, S = 1.058, $Dc=1.520g{\cdot}cm^{-3}$, $R_1=0.0412$, $wR_2=0.0948$, ${\mu}=1.128mm^{-1}$. The Zn(II) is six coordinated by two nitrogen and four oxygen atoms from the 1,10-phenanthroline and o-aminobenzoic acid to furnish a distorted octahedron geometry. The complex exhibits intense fluorescence at room temperature. Theoretical studies of the title complex were carried out by density functional theory (DFT) B3LYP method. CCDC: 898291.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.818-822
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• 2011

ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1734-1741
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• 2023

This work presents the synthesis and preparation of a new glass system described by the equation of (70-x) B₂O₃-5TeO₂ -20SrCO₃-5ZnO -xBi₂O₃, x = 0, 1, 5, 10, and 15 mol. %, using the melt quenching technique at a melting temperature of 1100 ℃. The photon-shielding characteristics mainly the linear attenuation coefficient (LAC) of the prepared glass samples were evaluated using Monte Carlo (MC) simulation N-particle transport code (MCNP-5) at gamma-ray energy extended from 59 keV to 1408 keV emitted by the radioisotopes Am-241, Ba-133, Cs-137, Co-60, Na-22, and Eu-152. Furthermore, we observed that the Bi₂O₃ content of the glasses had a significantly stronger impact on the LAC at 59 and 356 keV. The study of the lead equivalent thickness shows that the performance of fabricated glass sample with 15 mol.% of Bi₂O₃ is four times less than the performance of pure lead at low gamma photon energy while it is enhanced and became two times lower the perforce of pure lead at high energy. Therefore, the fabricated glasses special sample with 15 mol.% of Bi₂O₃ has good shielding properties in low, intermediate, and high energy intervals.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.45-50
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• 2015

The goal of this research is the create novel magnets with no rare-earth contents, with larger energy product by comparison with currently used ferrites. For this purpose we developed nano-sized hard-type/soft-type composite ferrite in which high remanent magnetization (Mr) and high coercivity (Hc). Nano-sized Ba-ferrite, Ni-Zn ferrite and $BaFe_{12}O_{19}/Ni_{0.5}Zn_{0.5}Fe_2O_4$ composite ferrites were prepared by sol-gel combustion method by use of glicine-nitrate and citric acid. Nanocomposite ferrites were calcined at temperature range $700-900^{\circ}C$ for 1h. According to the X-ray diffraction patterns and FT-IR spectra, single phase of NiZn-ferrite and Ba-ferrite were detected and hard/soft nanocomposite ferrite was indicated to the coexistence of the magnetoplumbite-structural $BaFe_{12}O_{19}$ and spinel-structural $Ni_{0.5}Zn_{0.5}Fe_2O_4$ that agreed with the standard JCPDS 10-0325 data. The particle size of nanocomposite turn out to be less than 120 nm. The nanocomposite ferrite shows a single-phase magnetization behavior, implying that the hard magnetic phase and soft magnetic phase were well exchange-coupled. The specific saturation magnetization ($M_s$) of the nanocomposite ferrite is located between hard ($BaFe_{12}O_{19}$) and soft ferrite($Ni_{0.5}Zn_{0.5}Fe_2O_4$). The remanence (Mr) of nanocomposite ferrite is much higher than that of the individual $BaFe_{12}O_{19}$ and $Ni_{0.5}Zn_{0.5}Fe_2O_4$ ferrite, and $(BH)_{max}$ is increased slightly.

• Journal of the Korean earth science society
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• v.27 no.3
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• pp.313-327
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• 2006

This study investigated the geochernical characteristics of Mn scale formed in groundwater wells at the Damyang area. The composition of Mn scale consists mainly of MnO and $SiO_2$. The content of Mn ranges from56.61wt.% to 68.69wt.%, and $SiO_2$ content ranges from 1.56wt.% to 10.45wt.%. The contents of Mo and Ba in Mn scale increased with increased depth; whereas, the content of Zn and Pb decreased with increased depth. Birnessite, quartz and feldspars were identified in Mn scales using x-ray powder diffraction studies. The IR absorption bands for Mn scales show major absorption band due to OH stretching, adsorbed molecular water, and birnessite stretching, respectively. In the SEM and EDS analysis, the Mn scale consists of botryoidal, spherical, spherulite, and empty straw structure. Those structure may be precipitated simply due to oversaturation with concentrated Mn content or may be formed through biogenic precipitation by Lepthothrix discophora. Under microanalysis using EDS on those structure surface of Mn scales, the Mn atomic percent range from 28 to 44, and such elements revealed the presence of Si, K, Na, Ca, Cl, Cu, Zn, and Ba.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.201.2-201.2
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• 2013

원자층 증착법(ALD)을 통해 최적의 Al doped ZnO (AZO)박막을 얻기 위해 기판온도와 Al도핑농도 등의 공정변수를 조절하여 최적의 성막 조건 연구특성을 분석하였다. 증착당시 Zn와 Al의 precursors는 diethylzinc(DEZ), trimethylaluminum(TMA)을 각각 사용하였으며, reactants로는 Deionized water를 사용하였다. DEZ와 TMA의 증착비율을 통하여 1%에서 12%까지 Al의 도핑농도를 조절하였다. 이후 Hall effect measurement를 이용하여 기판온도와 Al도핑농도에 따른 AZO박막의 운반자 농도, 이동도, 저항을 분석했고, X-ray diffraction을 통하여 물리적 구조의 변화를 관측했다. 공정 최적화를 통하여 Al도핑농도의 변화가 AZO박막의 전기적 특성에 미치는 영향을 해석하였다. 또한, 공정의 최적화 이후 AZO박막을 나노 구조체 석영(quartz)기판위에 250도의 온도에서 Al ~3%의 농도로 10nm부터 150nm까지의 두께로 증착하였다. SEM 분석을 통해 나노 구조체 기판에 균일한 AZO 박막이 형성되었는지 확인하였고, AZO박막의 두께에 따른 전기적 특성 및 광 투과도를 측정한 결과 나노구조체 석영 기판위에 증착된 AZO박막은 가시광선 영역에서 80%이상의 광 투과도를 보였으며 ${\sim}10^{-3}{\Omega}cm$의 저항을 보였다.