• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.73-78
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• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

• Journal of Hydrogen and New Energy
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• v.5 no.1
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• pp.41-49
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• 1994

Ti-Bi alloy was prepared by arc melting of appropriate amounts of titanium and bismuth powder. The photocurrent($I_{ph}$) of Ti-Bi oxide electrode was increased with the increase of Bi content, up to 10wt%. The maximum $I_{ph}$ showed $7.6mA/cm^2$ at V=0.5V vs. SCE. The band gap energy of Ti-Bi oxide electrode was observed to 3.0~2.87eV. Surface barrier($V_s$) of Ti-10Bi oxide electrode showed maximum value(1.08V) but didn't exceed 1.23V, then it was impossible to run $H_2$ generation without any other energy sources other than the light. Ti-Bi oxide electrode was found to be quite stable under alkaline solution and showed no signs of photodecomposition.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.135-139
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• 2008

MFISFETs with platinum electrode on the $LiNbO_3$/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[$cm^2/V{\cdot}s$] and 0.16[mS/mm], respectively. The drain current of 27[${\mu}A$] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET.

• Communications of the Korean Mathematical Society
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• v.17 no.2
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• pp.221-227
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• 2002

In this paper we will show that the followings ; (1) Let R be a regular local ring of dimension n. Then $A_{n-2}$(R) = 0. (2) Let R be a regular local ring of dimension n and I be an ideal in R of height 3 such that R/I is a Gorenstein ring. Then [I] = 0 in $A_{n-3}$(R). (3) Let R = V[[ $X_1$, $X_2$, …, $X_{5}$ ]]/(p+ $X_1$$^{t1}$ + $X_2$$^{t2}$ + $X_3$$^{t3}$ + $X_4$$^2$+ $X_{5}$ $^2$/), where p $\neq$2, $t_1$, $t_2$, $t_3$ are arbitrary positive integers and V is a complete discrete valuation ring with (p) = mv. Assume that R/m is algebraically closed. Then all the Chow group for R is 0 except the last Chow group.group.oup.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.143.2-143.2
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• 2011

보현산천문대 1.8 m 망원경과 2K CCD를 이용하여 2002년 4월과 2003년 5월에 중원소 함량이 아주 적은 구상성단 M53(NGC 5024)과 M92(NGC 6341)에 대하여 BVI CCD 측광관측을 수행하였다. 구상성단 M53과 M92의 정밀한 상대 나이 측정을 위하여 M53의 측광관측 자료에 대해 조동환과 이상각이 2007년 출간한 구상성단 M15(NGC 7078)와 M92를 대상으로 수행한 측광연구 논문에서 M92의 측광관측 자료를 분석할 때 적용한 꼭 같은 방식으로 전처리, PSF 측광, 표준화 등의 자료 분석을 수행하였다. 그리고 구상성단 M53의 V 대 BV, V 대 V-I, 그리고 V 대 B-I 색-등급도를 제시하였다. 구상성단 M53과 M92의 상대 나 이는 ${\Delta}$(B-V) 방법을 이용하여 도출하였다. 구상성단 M53과 M92 사이의 상대 나이 비교에서 M92의 절대 나이를 14 Gyr로 취할 경우 M53의 상대 나이가 M92의 상대 나이보다 $1.1-2.6{\pm}0.9$ Gyr 적은 것으로 유도하였다. 구상성단 M53과 M92의 이 상대 나이 차이는 M53과 M92의 약간 다른 수평계열 형태 차이를 유발했을 것으로 추정한다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.9-17
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• 2006

We proposed a new High-speed CMOS Level Up/Down Shifter circuits that can be used with Dynamic Voltage and Frequency Scaling(DVFS) algorithm, for low power system in the SoC(System-on-Chip). This circuit used to interface between the other voltage levels in each CMOS circuit boundary, or between multiple core voltage levels in a system bus. Proposed circuit have advantage that decrease speed attenuation and duty ratio distortion problems for interface. The level up/down shifter of the proposed circuit designed that operated from multi core voltages$(0.6\sim1.6V)$ to used voltage level for each IP at the 500MHz input frequency The proposed circuit supports level up shifting from the input voltage levels, that are standard I/O voltages 1.8V, 2.5V, 3.3V, to multiple core voltage levels in between of $0.6V\sim1.6V$, that are used internally in the system. And level down shifter reverse operated at 1Ghz input frequency for same condition. Simulations results are shown to verify the proposed function by Hspice simulation, with $0.6V\sim1.6V$ CMOS Process, $0.13{\mu}m$ IBM CMOS Process and $0.65{\mu}m$ CMOS model parameters. Moreover, it is researched delay time, power dissipation and duty ration distortion of the output voltage witch is proportional to the operating frequency for the proposed circuit.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.8
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• pp.1038-1045
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• 2000

An experimental study was carried out to delineate the flow characteristics in a closed countescurrent two-phase thermo syphon with concentric tubes. This is to be installed in the HANARO research reactor as a part of a Cold Neutron Source(CNS). In the present investigation, experiments ata room temperature with Freon-II3 as a moderator were performed. Results show that, based on the magnitude of pressure fluctuation, the flow regimes could be divided into 4 distinct ones in the ($V_f,\;Q_i$) plane, where $V_f$ represents the volume of the charged liquid and $Q_i$ the heat load: a stable flow regime, an oscillatory flow regime, a restablized flow regime and a dryout flow regime. For $V_f$>2.5l, the flow is stable at low $Q_i$. However, as $Q_i$ increases, the flow becomes oscillatory and finally restablizes As $V_f$ increases, the oscillation amplitude decreases, reaching to the restablized flow region at low $Q_i$, and the liquid level in the moderator cell remains high. In the oscillatory flow regimes, for a fixed VI; the oscillating period of time varies with $Q_i$, having a minimum value at a certain value of $Q_i$. The heat load, where the oscillating period of time is minimum, decreases as $V_f$ increases.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.280-285
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• 2014

In order to evaluate the insulation deterioration in the stator windings of five gas turbine generators(137 MVA, 13.8 kV) which has been operated for more than 13 years, diagnostic test and AC dielectric breakdown test were performed at phases A, B and C. These tests included measurements of AC current, dissipation factor, partial discharge (PD) magnitude and capacitance. ${\Delta}I$ and ${\Delta}tan{\delta}$ in all three phases (A, B and C) of No. 1 generator stator windings showed that they were in good condition but PD magnitude indicated marginally serviceable and bad level to the insulation condition. Overall analysis of the results suggested that the generator stator windings were indicated serious insulation deterioration and patterns of the PD in all three phases were analyzed to be internal, slot and spark discharges. After the diagnostic test, an AC overvoltage test was performed by gradually increasing the voltage applied to the generator stator windings until electrical insulation failure occurred, in order to determine the breakdown voltage. The breakdown voltage at phases A, B and C of No. 1 generator stator windings failed at 28.0 kV, 17.9 kV, and 21.3 kV, respectively. The breakdown voltage was lower than that expected for good-quality windings (28.6 kV) in a 13.8kV class generator. In the AC dielectric breakdown and diagnostic tests, there was a strong correlation between the breakdown voltage and the voltage at which charging current increases abruptly ($P_{i1}$, $P_{i2}$).

• Journal of the Korean Chemical Society
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• v.29 no.3
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• pp.239-246
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• 1985

The equilibria of chemical reaction between [Cu(dl-trans-[14]-diene)]$^{2+}$ and L$^{n-}$(S$_2$O$_3^{2-}$, SCN$^-$, I$^-$, NO$_2^-$) ions were studied by the spectrophotometric method in the range of 15 to 35$^{\circ}C$ and 1 to 1500bar. The equilibrium constants(K) for L$^{n-}$ = S$_2$O$_3^{2-}$, SCN$^-$, I$^-$ and NO$_2^-$ ions at 25$^{\circ}C$ and 1500bar were 3.0, 1.9, 0.6 and 0.5, respectively. The values of K decreased with increasing pressure and temperature. From the temperature effect on equlibrium constant, the thermodynamic parameters(${\Delta}G^{\circ}$, ${\Delta}H^{\circ}$, ${\Delta}S^{\circ}$) of reaction were evaluated and the reactions of [Cu(dl-trans-[14]-diene)]2+ ion with S$_2$O$_3^{2-}$, SCN$^-$ and I$^-$ except NO$_2^-$ ion were exothermic. The volume changes of reaction(${\Delta}$V) had positive values for all the used anions. The values of ${\Delta}$V in cm$^3$/mole for S$_2$O$_3^{2-}$ ion at 1,500, 1,000 and 1,500bar were 26, 22, 19 and 16, and those for S$_2$O$_3^{2-}$, SCN$^-$, I$^-$ and NO$_2^-$ ions at atmospheric pressure 26, 30, 64 and 45, respectively. Bonding character between Cu(Ⅱ)-complex ion and L$^{n-}$ was discussed by comparing both the equlibrium constants experimentally determined and those calculated according to Fuoss's ion-pair equation in case of S$_2$O$_3^{2-}$ ion.

• Journal of the Korean Society for Railway
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• v.16 no.5
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• pp.386-393
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• 2013

In this study, the so-called repeated plate load bearing test (RPBT) used to get $E_{v2}$ values in order to check the degree of compaction of subgrade, and to get design parameters for determining the thickness of the trackbed foundation, is investigated. The test procedure of the RPBT method is scrutinized in detail. $E_{v2}$ values obtained from the field were verified in order to check the reliability of the test data. The $E_{v2}$ values obtained from high-speed rail construction sites were compared to converted modulus values obtained from resonant column (RC) test results. For these tests, medium-size samples composed of the same soils from the field were used after analyzing stress and strain levels existing in the soil below the repeated loading plates. Finite element analyses, using the PLAXIS and ABAQUS programs, were performed in order to investigate the impact of the strain influence coefficient. This was done by getting newly computed $I_z$ to get the precise strain level predicted on the subgrade surface in the full track structure; under wheel loading. It was verified that it is necessary to use precise loading steps to construct nonlinear load-settlement curves from RPBT in order to get correct $E_{v2}$ values at the proper strain levels.