• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.840-846
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• 1991

In case of the rapid thermal process by halogen lamps, an optical pyrometer is generally used to measure the temperature. It is, however, necessary to measure the temperature by the thermocouple when the process temperature is lower than 700$^{\circ}C$ and the correction of the temperature is required. Contact by the PdAg paste is commonly used out but in this case it is impossible to see the effect of surface states of the substrate, which is critical in the rapid thermal process. In this study, real temperature ramping speed of silicon substrates coveredwith various thin films such as SiO$_2$2, Si$_{3}N_{4}$, dopants, and conductive layers (Ti or Co) was investigated by a mechanical contact of the thermocouple. And the results were compared with the case in which the contact was made by the PdAg paste. Effect of process ambient was also studied. It was found that depending on the surface state, overshoot more than 100$^{\circ}C$ could occur. It was also found that in case of the substrate covered with conductive layers, mechanical contact might render the correct temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.248-249
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• 2007

The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were about -3.7%/K.

• Computers and Concrete
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• v.19 no.2
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• pp.153-159
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• 2017

In this study, the strength properties of alkali-activated silica fume (SF) mortars were investigated. The crushed limestone sand with maximum size of 0-5 mm and the sodium meta silicate ($Na_2SiO_3$) used to activate the binders were kept constant in the mortar mixtures. The mortar specimens using the replacement ratios of 0, 25, 50, 75 and 100% SF by weight of cement together with $Na_2SiO_3$ at a constant rate were produced in addition to the control mortar produced by only cement. Moreover, the mortar specimens using the replacement ratio of 4% titanium dioxide ($TiO_2$) by weight of cement in the same mixture proportions were produced. The prismatic specimens produced from eleven different mixtures were de-moulded after a day, and the wet or dry cure was applied on the produced specimens at laboratory condition until the specimens were used for flexural strength ($f_{fs}$) and compressive strength ($f_c$) measurement at the ages of 7, 28 and 56 days. The $f_{fs}$ and $f_c$ values of mortars applied the wet or dry cure were compared with the results of control mortar. The findings revealed that the $f_c$ results of the alkali activated 50% SF mortars were higher than that of mortar produced with Portland cement only. It was found that the $f_{fs}$ and $f_c$ of alkali-activated SF mortars cured in dry condition was averagely 4% lower than that of alkali-activated SF mortars cured in wet condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• The Journal of the Petrological Society of Korea
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• v.12 no.3
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• pp.135-153
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• 2003

In order to understand its origin and petrogenesis, petrochemical studies of major, trace elements, REE, and stable isotopes of oxygen and carbon from the Hongcheon Fe-REE deposits have been investigated. The Hongcheon Fe-REE deposit intruding into Precambrian metasedimentary rocks consists of magnetite, various carbonates such as ankerite, siderite, magnesite and strontianite, monazite, aegirine-augite, Na-amphibole, and sulfides. Compared with major elements abundances of typical ferro-carbonatites, the Hongcheon Fe-REE deposit is enriched in FeO and depleted in CaO with increasing of $SiO_2$, where $TiO_2$and $A1_2O_3$increased and CaO, FeO, MgO and $P_2O_5$ are slightly decreased, but those are rather scattered and their trends are somewhat ambiguous. V Ni, U and Rb slightly increasing with of $SiO_2$increase and scattering or no trends of other detected elements. Nb, Zr and Zn are depleted then the abundances of typical ferro-carbonatites (Woolley and Kempe, 1989). In rare earth elements a large enrichment of total REE (maximum 14.8 wt%) and LREE relative to chondrites and HREE depleted more then the values of ferro-carbontites therefore La/Lu ratios shows large abundances (max. 16,197). The results of stable isotopes of O and C from minerals of ankerite and strontianite and whole rocks represent studied rocks are from igneous carbonatitic melts. Although petrochemical characteristics of the Hongcheon Fe-REE deposits are somewhat different from normal ferro-carbonatites from the world, this discrepancy suggests another conclusion that petrochemical characteristic of the studied Fe-REE mineralized rocks are similar to those of phoscorites from Kovdor, Russia and Sokli, Finland showing the same petrochemical compositions described above.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• Journal of Environmental Health Sciences
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• v.14 no.1
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• pp.1-9
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• 1988

석탄유도가스에 포함된 황화수소를 제거시킬 흡착제를 개발하기 위하여 알칼리 토금속, 천이원소 및 아연의 이온반경보다 이온반경이 작은 금속산화물을 산화아연에 첨가시켜 다공성 흡착제를 제조하였다. 600$\circ$C에서 이들 첨가시료를 2.09vol.% 황화수소와 질소가스 혼합기체로 반응시켜 초기속도를 측정하고, 같은 온도에서 사용된 흡착제를 공기로 재생시켰다. 사용된 금속산화물 첨가 흡착제중에서 CaO, TiO$_2$, $Fe_2O_3$, CuO, $Ga_2O_3$ 및 Si$_2$O가 ZnO 흡착제의 초기속도를 증가시켜 첨가제로 사용할 수 있음을 보였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.216-221
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• 2010

Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.

• Transactions of the Korean Society of Automotive Engineers
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• v.10 no.6
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• pp.171-177
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• 2002

Metal matrix composites had generated a lot of interest in recent times because of significant in specific properties, it was also highlighted as the material of frontier industry because strength, heat-resistant, corrosion-resistant and wear-resistant were superiored. In recent years, the study of metal matrix composite has increased by aluminum alloy. The study is based on the tribological properties of AC4CH that is a part of the mechanical property of metal matrix composites. Metal matrix composite that is produced from matrix material AC4CH and reinforcement SiO$_2$, Al$_2$O$_3$ and TiO$_2$ are added to the metal matrix composite fur strength so binding among the whisker can take place. Each metal matrix composite is produced using the squeeze casting method. To test for tribe a pin-on-disk machine and lubricant is used without paraffine 8.2CST at room temperature which is 40$\^{C}$. As the results of this study, the tribological properties of each specimen are more improved than AC4CH. The variation of coefficient resistance is more stable at the AC4CH and TiO$_2$, but the variation rates are higher at the inanimate binder.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1252-1253
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• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method with different $Ar/O_2$ ratio. The $V_{1.8}W_{0.2}O_5$ thin films were measured electrical and structural properties, fairly good Temperature coefficient of resistance(TCR). It was found that electrical and structural properties, TCR properties of thin films were strongly dependent upon the $Ar/O_2$ ratio. The dielectric constant of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were 93 with a dielectric loss of 0.535, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were -3.15%/$^{\circ}C$.