• 제목/요약/키워드: $TiO_2-V_2O_5$ Thin Films

검색결과 241건 처리시간 0.026초

박막형 습도센서의 전기적 특성에 대한 연구 (A Study on the Electrical Properties of Thin Film Type Humidity Sensor)

  • 유도현
    • 전기학회논문지
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    • 제57권6호
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    • pp.1012-1016
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    • 2008
  • [ $TiO_2-V_2O_5$ ] sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. As a results of crystalline properties, $V_2O_5$ peaks were not found in spite of $V_2O_5$ additive. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping. Capacitance of thin films increased with increasing heat treatment temperature and it increased largest at $700^{\circ}C$. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

솔젤법으로 제작한 $TiO_2-V_2O_5$ 세라믹스의 물성 (Properties of $TiO_2-V_2O_5$ Ceramics Prepared by Sol-Gel Method)

  • 유도현
    • 전기학회논문지
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    • 제56권7호
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    • pp.1255-1260
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    • 2007
  • [ $TiO_2-V_2O_5$ ] sol was prepared using sol-gel method. Sol changed to gel with hydrolysis and polymerization. DTA properties of gel powder had endothermic reaction due to evaporation of propanol about $80^{\circ}C$, had exothermic reaction due to combustion of propanol about $230^{\circ}C$ and had exothermic reaction due to combustion of alkyl group about $350^{\circ}C$. Crystalline properties of gel powder retained amorphous phase at $50^{\circ}C$, retained anatase phase from $400^{\circ}C\;to\;600^{\circ}C$ and had all rutile phase over $700^{\circ}C$ at 0.01mole $V_2O_5$ additive. The capacitance of thin films increased with increasing heat treatment temperature and thin films had best properties at $700^{\circ}C$. The capacitance of thin films increased a lot with decreasing measurement frequency.

$V_2O_5$ 첨가에 따른 $TiO_2$ 세라믹스의 감습특성 (Humidity Sensitive Properties of $V_2O_5$-added $TiO_2$ Ceramics)

  • 유도현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 합동춘계학술대회 논문집 전기물성,응용부문
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    • pp.161-163
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    • 2008
  • $TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$, thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

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$V_2O_5$ 첨가가 $TiO_2$ 세라믹스의 물성에 미치는 효과 (Effects on Properties of $V_2O_5$-added $TiO_2$ Ceramics)

  • 유도현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 학술대회 논문집 전문대학교육위원
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    • pp.138-140
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    • 2007
  • $TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.

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Band Gap Tuning in Nanoporous TiO2-ZrO2 Hybrid Thin Films

  • Kim, Chang-Sik;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • 제28권12호
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    • pp.2333-2337
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    • 2007
  • Nanoporous TiO2 and ZrO2 thin films were spin-coated using a surfactant-templated approach from Pluronic P123 (EO20PO70EO20) as the templating agent, titanium alkoxide (Ti(OC4H9)4) as the inorganic precursor, and butanol as a the solvent. The control of the electronic structure of TiO2 is crucial for its various applications. We found that the band gap of the hybrid nanoporous thin films can be easily tuned by adding an acetylacetonestabilized Zr(OC4H9)4 precursor to the precursor solution of Ti(OC4H9)4. Pores with a diameter of 5 nm-10 nm were randomly dispersed and partially connected to each other inside the films. TiO2 and ZrO2 thin films have an anatase structure and tetragonal structure, respectively, while the TiO2-ZrO2 hybrid film exhibited no crystallinity. The refractive index was significantly changed by varying the atomic ratio of titanium to zirconium. The band gap for the nanoporous TiO2 was estimated to 3.43 eV and that for the TiO2-ZrO2 hybrid film was 3.61 eV.

AES/XPS를 이용한 Au/V, Au/Ti 박막의 표면산화물 분석 (Characterization of Surface Oxides in Gold Thin Films with V- and Ti- underlays by AES and XPS)

  • Kim, Jin -Young
    • 한국진공학회지
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    • 제1권1호
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    • pp.100-105
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    • 1992
  • Au/V, Au/Ti의 이중구조 박막을 대기 중에서 $500^{\circ}C$에서 열처리한 후 Auger electron spectroscopy(AES)와 X-ray photoelectron spectroscepy(XPS)를 이용하여 분석 하였다. 열처리 과정에서 Au와 SiO2 기판 사이의 V-와 Ti- 하층박막은 Au 표면 위에 산화 물을 형성하였다. 산화물의 화학조성은 Au/V, Au/Ti 박막에서 V2O5와 TiO2로 각각 판명되었다.

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Electrical Properties of (Bi,Y)4Ti3O12 Thin Films Grown by RF Sputtering Method

  • Nam, Sung-Pill;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Journal of Electrical Engineering and Technology
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    • 제2권1호
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    • pp.98-101
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    • 2007
  • Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.

$Ar/O_2$ 비에 따른 $V_{1.8}W_{0.2}O_5$ thin film 의 구조적, 유전적 특성 (Structural and electrical properties of $V_{1.8}W_{0.2}O_5$ thin films with $Ar/O_2$ Ratio)

  • 이승환;박인길;배선기;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1252-1253
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    • 2008
  • The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method with different $Ar/O_2$ ratio. The $V_{1.8}W_{0.2}O_5$ thin films were measured electrical and structural properties, fairly good Temperature coefficient of resistance(TCR). It was found that electrical and structural properties, TCR properties of thin films were strongly dependent upon the $Ar/O_2$ ratio. The dielectric constant of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were 93 with a dielectric loss of 0.535, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were -3.15%/$^{\circ}C$.

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초음파분무 MOCVD법에 의한 $Bi_4Ti_3O_{12}$ 박막의 제조와 La과 V의 Co-Substitution 에 의한 효과 (Effects of substitution with La and V in $Bi_4Ti_3O_{12}$ thin film by MOCVD using ultrasonic spraying)

  • 김기현;곽병오;이승엽;이진홍;박병옥
    • 한국결정성장학회지
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    • 제13권6호
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    • pp.272-278
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    • 2003
  • 초음파 분무에 의한 유기금속 화학증착법 (MOCVD)법으로 $Bi_4Ti_3O_{12}$(BIT)와 Bi와 Ti 대신에 La과 V을 동시에 치환시킨 ($Bi_{3.75}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV)박막을 ITO/glass 기판 위에 증착하였다. 산소 분위기에서 30분 동안 증착한 후, RTA 방식의 직접삽입법으로 열처리를 하였다. 박막은 페로브스카이트상 생성 온도, 미세구조, 전기적 성질에 관해서 조사하였다. XRD(X-Ray diffraction) 측정결과 BLTV 박막의 페로브스카이트상 생성 온도는 약 $600^{\circ}C$로써 BIT의 $650^{\circ}C$보다 더 낮았다. BLTV 박막의 누설전류는 인가전압 1 V에서 $1.52\times10^{-19}$ A/cm^2$로 측정되었다 또한, $650^{\circ}C$에서 증착했을 경우 잔류 분극값이 $5.6\mu$C/$cm^2$, 항전계값 96.5 kV/cm으로 명확한 강유전성을 보이고 있다.

비냉각 적외선 검출기용 $V_{1.85}W_{0.15}O_5$ 박막의 구조적, 전기적 특성 (Structural and Electrical Properties of $V_{1.85}W_{0.15}O_5$ Thin Films for the Uncooled Infrared Detector)

  • 남성필;류기원;이성갑;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.237-238
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    • 2008
  • The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

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