• 한국재료학회지
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• 제11권7호
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• pp.545-549
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• 2001

고온 안정성의 유리계로 알려진 회토류 알루미나 규산염계중, Nd$_2$O$_3$-Al$_2$O$_3$-SiO$_2$(NdAS)계 유리의 응용범위를 찾고자 결정화유리를 제조하여 그 물성의 특성을 평가하였다. NdAS에 결정화제로 TiO$_2$를 첨가하여 내부결정화를 유도하여 생성된 결정화유리에 대하여 결정상과 잔류유리의 물리적, 열적, 기계적 물성을 측정하였다. NdAS-TiO$_2$유리계는 열처리와 조성 조건에 따라 생성된 표면 및 내부결정상은 같은 결정상을 갖는 것으로 X선회절의 결과로 확인되었으나, 알려 있지 않은 결정상으로 내부결정의 경우, 원자구성비는 $Nd_{4.6}Si_{7.2}Al_{4.0}Ti_{2.4}O_{32}$이었다. 결정화유리의 선팽창계수는 $5.4~6.2{\times}10^{-6}/^{\circ}C$ 정도로 경정성장이 일어날수록 증가되었다. 결정화유리중의 결정상의 경도와 탄성계수는각 각 12GPa, 220Gpa으로 나타난 것을 고려한다면 내부결정화에 의한 결정화유리의 물성은 고온 구조용 재료로 활용도가 넓을 것으로 본다.

• 한국세라믹학회지
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• 제44권2호
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• 한국재료학회지
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• 제10권10호
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• pp.684-690
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• 2000

Metal-Ferroelectric-Metal(MFM) 구조의 개퍼시터에서 $Pb(Zr,Ti)O_3(PZT)$-전극 계면층이 PZT 박막 특성에 기여하는 영향을 알아보기 위하여 Pt/PZT/계면층/Pt/$TiO_2/SiO_2$/Si 구조의 캐퍼시터를 제작하였다. 계면층으로 사용될 물질들 중에서 $PbTiO_3(PT)$ 층을 sol-gel 방법으로 형성하였으며, PbO, $ZrO_2,\;TiO_2$ 층들을 reactive sputtering 방법으로 형성하였다. PZT박막을 구성하는 원소들로 이루어진 단순 산화물들의 특성을 평가하기 위하여 PbO, $ZrO_2,\;TiO_2$를 계면층으로 사용하여 $600^{\circ}C$에서 열처리를 실시하였고, 이 경우에는 $TiO_2$가 가장 우수하게 PZT의 결정립 크기를 미세하게 하는 효과를 보였으나, 두께가 증가함에 따라 표면 거칠기가 증가하고 anatase 상으로 남기 때문에 강유전특성이 열화되었다. 반면에 PT 박막을 계면층으로 사용한 경우에는 결정립 크기의 감소와 더불어 전기적인 특성도 향상되었다. 또한 PZT의 핵생성 위치를 판단하기 위하여 PT 삽입층의 위치를 변화하며, 실험한 결과, 하부전극과 PZT 박막의 계면에 PT 삽입층을 형성하였을 경우에 가장 효과적인 seed로서의 역할을 하였다.

• 대한기계학회논문집A
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• 제33권7호
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• pp.652-657
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• 2009

Strength characteristics of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and additive $SiO_2$. $SiO_2$ colloidal could significantly increase the bending strength. Crack healing temperature decreased 300 K by additive $TiO_2$. Bending strength of specimen added $SiO_2$ is higher than that of non-added $SiO_2$. Moreover, bending strength of specimen with $SiO_2$ colloidal coating is much higher that of non-coated specimen. In in-situ observation, crack-healed specimen at 1,573 K shows phenomenon like a fog on the surface. By SPM, both crack-healed specimen, non-coating and coating of $SiO_2$ colloidal, at 1,273 K were healed completely but both of 1,573 K exist crack. This was made by evaporation of $SiO_2$ at high temperature. Crack-healing materials of $Si_3N_4$ composite ceramics is crystallized $Y_2Si_2O_7$, $Y_2Ti_2O_7$ and $SiO_2$. A large amount of Si and O, and little C were detected by EPMA. Si and O increase but C decreases according to heat treatment temperature. Specimens with additive $SiO_2$ were more detected Si and O than that of non-additive $SiO_2$. Specimen with $SiO_2$ colloidal coatings were much more detected O.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.268-268
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• 2012

Adsorption and desorption of toluene from bare and $TiO_2$-coated silica with a mean pore size of 15 nm was studied using breakthrough curves and temperature programmed desorption. Thicknesses of $TiO_2$ films prepared by atomic layer deposition on silica were < 2 nm, and ~ 5 nm, respectively. For toluene adsorption, both dry and humid conditions were used. $TiO_2$-thin film significantly improved toluene adsorption capacity of silica under dry condition, whereas desorption of toluene from the surface as a consequence of displacement by water vapor was more pronounced for $TiO_2$-coated samples with respect to the result of bare ones. In the TPD experiments, silica with a thinner $TiO_2$ film (thickness < 2 nm) showed the highest reactivity for toluene oxidation to $CO_2$ in the absence and presence of water. We show that the toluene adsorption and oxidation reactivity of silica can be controlled by varying thickness of $TiO_2$ thin films.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2001년도 춘계학술대회 발표논문집
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• pp.40-46
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• 2001

A1₂TiO/sub 5/ 세라믹스의 열적 안정성은 MgO와 고온 arc용융노에서 MgAl₂O₄ spinel과 같은 고용체를 이루고, SiO₂, ZrO₂와 α-Al₂O₃등의 첨가제로 입자크기와 미세 균열을 감소시킴으로서 증가시킨다. A1₂TiO/sub 5/ 세라믹스의 낮은 열팽창 특성은 상이한 열팽창으로 hysteresis 곡선을 나타내며 이 현상은 미세균열의 opening과 closing으로 설명된다. 이들의 열팽창 곡선, 소성온도에 EK른 관계를 dilatometer로 연구하였다.

• 한국세라믹학회지
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• 제35권11호
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• 한국세라믹학회지
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• 제35권1호
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• pp.88-96
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• 1998

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

• 대한기계학회논문집A
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• 제39권10호
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• pp.955-962
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• 2015

비커스 경도 시험은 모든 재료에 적용할 수 있으며, 경도 시험 중에서 가장 광범위하게 사용된다. 경도는 기계적 성질을 평가하는 하나의 확률변수로 볼 수 있다. 본 연구는 $ZrO_2$ 단상 세라믹스와 $TiO_2$ 첨가량에 따르는 $ZrO_2/SiC$ 복합 세라믹스의 굽힘강도와 비커스 경도의 통계적 성질을 조사하였다. 굽힘강도와 비커스 경도는 와이블 확률 분포를 잘 따랐다. 척도 및 형상 파라메터는 $ZrO_2$ 모재 세라믹스, $ZrO_2/SiC/TiO_2$ 모재 세라믹스 및 이들을 열처리한 세라믹스를 사용하여 평가하였다. 또한 압입하중의 증가에 따른 영향도 평가하였다.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.