• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.288-288
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• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• 한국재료학회지
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• 제14권2호
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• 터널과지하공간
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• 제22권1호
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• pp.69-76
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• 2012

본 논문은 폭약의 폭발현상을 이용한 폭발용접, 폭발성형과 충격분말고화기술의 기본적 원리와 실험방법, 실험결과에 대하여 기술한다. 타이타늄(Ti)과 스테인레스 강(Stainless steel, SUS 304) 판재의 폭발용접 실험결과, 두 재료 접촉면의 단면에서는 연속적인 젯(jet)모양의 파형이 관찰되었고, 두 금속판재의 설치 경사각도가 $15{\sim}20^{\circ}$ 이고 접착속도가 2,100~2,800 m/s인 경우에 최적의 접합조건을 보였다. 알루미늄(Al) 판재를 이용한 폭발성형 실험과 전형적인 가압성형 실험 결과를 비교분석하여, 폭발성형의 경우가 큰 곡률변형을 보여 가공성이 우수한 것으로 확인되었다. 끝으로 금속과 세라믹의 혼합분말($Fe_{11.2}La_2O_3Co_{0.7}Si_{1.1}$)에 대한 충격고화 실험법을 제안하고 실험을 수행한 결과, 고화체의 표면과 내부에 균열이 확인되지 않았으며 세라믹입자와 금속입자들의 강한 미세조직 결합이 형성되었다. 또한 충격분말고화실험에서 발생되는 폭약의 폭발에 의한 폭굉파와 수중 충격파의 전파 및 간섭현상을 분석하기 위하여 LS-Dyna 3D를 이용한 동적해석을 수행하였다. 그 결과, 물용기 내 벽면에서 반사된 수중충격파가 중앙부에서 중첩되어 폭약의 폭발압력보다 높은 20 GPa의 수중 충격압을 보여, 물용기 내부형상의 중요성을 입증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• 한국방사선학회논문지
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• 제11권6호
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• pp.525-529
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• 2017

요오드화수은은 우수한 엑스선 민감도 특성을 가진 광도전체로 비정질 셀레늄을 대체할 수 있는 후보물질로 많은 연구가 진행되고 있지만 높은 누설전류로 인해 상용화에 많은 한계점을 나타내고 있다. 본 연구에서는 요오드화수은의 높은 누설전류를 저감하기 위해 요오드화수은에 비해 입자가 작은 이산화규소 및 이산화티타늄을 물리적으로 혼합하여 단위시편을 제작하였으며 제작된 단위시편의 전기적 특성을 비교 분석하였다. 그 결과 혼합한 두 물질 모두 요오드화수은의 높은 누설전류를 저감하는데 효과가 있었으며 요오드화수은-이산화티타늄 혼합물에서는 방사선 민감도 특성이 상당히 높아짐을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.367-370
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• 2004

We fabricated PLT(5) thin film on $Pt/TiO_x/SiO_2/Si$ substrate by using sol-gel method and investigated leakage current, switching and retention properties. The leakage current density of PLT(5) thin film was $3.56{\times}10^{-7}A/cm^2$ at 4V. In the examination of switching properties, pulse voltage and load resistance were $2V{\~}5V$ and $50{\Omega}{\~}3.3k{\Omega}$, respectively. Switching time had a tendency to decrease from 520ns to 140ns with the increase of pulse voltage, and also the time was increased from 140ns to $13.7{\mu}s$ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time was about 143kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching was about $10\%$. Also, polarization in retention was decreased as much as about $8\%$ after $10^5$s.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.202-203
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• 2007

Ferroelectric SBT($SrBi_2Ta_2O_9$) thin films were deposited on Pt/Ti/$SiO_2$/Si substrate using R.F. magnetron sputtering method. The ferroelectric and electric characteristics were investigated with various post-annealing of Pt at $200{\sim}600^{\circ}C$. Compared with SBT thin film which had not post-annealed, the electrical properties and crystallizations of the SBT thin films were relatively improved by the post-annealing of Pt bottom electrode. The crystallization were characterized by X-ray diffraction (XRD). The electrical properties characteristics were observed by HP 4192A and precision LC.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.