• Economic and Environmental Geology
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• v.27 no.2
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• pp.117-130
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• 1994

Titanomagnetite ore bodies in the Yonchon iron mine are closely associated with alkali gabbroic rocks of middle Proterozoic age which intruded Precambrian metasedimentary rocks. The orebodies can be divided into massive ores in gabbroic rock, skarn ores in calcareous xenoliths and banded ores in gneissic gabbro. Gabbroic rocks from the Yonchon iron mine have unusually high content of $TiO_2$ with an average values of 3.46 wt%. Iron ores are ilmenite (42.25~51.56 wt% in $TiO_2$) and titanomagnetite (1.29~6.57 wt% in $TiO_2$) and the former is dominant Small amount of magnetite, hematite, sphene and sulfide minerals are included in the ores. Grandite garnet, titanoaugite and tschermakite are in iron skarn ores. Hornblendes from ores and gabbroic rocks have a relatively homogeneous isotopic composition with ${\delta}D$ between -110.0 and -133.9‰, and ${\delta}^{18}O$ of +4.5 to +6.5‰, and calculated to have formed in fluids with ${\delta}O_{H_2O}$ of + 6.7 to +8.7‰. and ${\delta}_{H_2O}$ of -87.9 to -111.8‰, which has a similar isotopic value of primary magmatic water. Based on intrusive age, occurrence, mineral chemistry and isotopic compositions of magnetite ores and gabroic rocks, it will be concluded that the gabbroic rocks are responsible for the titanomagnetite mineralization. The titaniferous magnetite melt was immiscibly separated from the high titaniferous gabbroic melts of Proterozoic age.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2008.11a
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• pp.110-113
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• 2008

최근 가시광선에서 응답하는 광촉매를 이용하여 저농도의 일반적인 실내 대기 오염물질 제어를 위한 적용가능성에 대해 많은 평가가 있어왔다. 가시광선에서 활성을 보이는 질소 원소가 도핑된 TiO$_2$광촉매를 이용하여 대표적인 휘발성유기화합물질들 중에 하나인 MTBE의 분해율에 대한 실험을 실시하였다. 본 연구에서 여러 가지 변수들 중에 농도와 상대습도에 따라 MTBE의 분해율에 대하여 실험하였으며, 본 연구의 실험조건하에서 질소가 도핑된 TiO$_2$ 광촉매를 통해서 효과적으로 MTBE가 제거됨을 확인 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.245-245
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• 2012

Syntheses of oxide supported metal catalysts by wet-chemical routes have been well known for their use in heterogeneous catalysis. However, uniform deposition of metal nanoparticles with controlled size and shape on the support with high reproducibility is still a challenge for catalyst preparation. Among various synthesis methods, arc plasma deposition (APD) of metal nanoparticles or thin films on oxide supports has received great interest recently, due to its high reproducibility and large-scale production, and used for their application in catalysis. In this work, Au and Pt nanoparticles with size of 1-2 nm have been deposited on titania powder by APD. The size of metal nanoparticles was controlled by number of shots of metal deposition and APD conditions. These catalytic materials were characterized by x-ray diffraction (XRD), inductively coupled plasma (ICP-AES), CO-chemisorption and transmission electron microscopy (TEM). Catalytic activity of the materials was measured by CO oxidation using oxygen, as a model reaction, in a micro-flow reactor at atmospheric pressure. We found that Au/$TiO_2$ is reactive, showing 100% conversion at $110^{\circ}C$, while Pt/$TiO_2$ shows 100% conversion at $200^{\circ}C$. High activity of metal nanoparticles suggests that APD can be used for large scale synthesis of active nanocatalysts. We will discuss the effect of the structure and metal-oxide interactions of the catalysts on catalytic activity.

• Journal of Powder Materials
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• v.5 no.2
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• pp.98-110
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• 1998

$Ti_{52}Al_{48}$ and $(Ti_{52}Al_{48})_{100-x}B_x(x=0.5, 2, 5)$ alloys have been Produced by mechanical milling in an attritor mill using prealloyed powders. Microstructure of binary $Ti_{52}Al_{48}$ powders consists of grains of hexagonal phase whose structure is very close to $Ti_2Al$. $(Ti_{52}Al_{48})_{95}B_5$ powders contains TiB2 in addition to matrix grains of hexagonal phase. The grain sizes in the as-milled powders of both alloys are nanocrystalline. The mechanically alloyed powders were consolidated by vacuum hot pressing (VHP) at 100$0^{\circ}C$ for 2 hours, resulting in a material which is fully dense. Microstructure of consolidated binary alloy consists of $\gamma$-TiAl phase with dispersions of $Ti_2AlN$ and $A1_2O_3$ phases located along the grain boundaries. Binary alloy shows a significant coarsening in grain and dispersoid sizes. On the other hand, microstructure of B containing alloy consists of $\gamma$-TiAl grains with fine dispersions of $TiB_2$ within the grains and shows the minimal coarsening during annealing. The vacuum hot pressed billets were subjected to various heat treatments, and the mechanical properties were measured by compression testing at room temperature. Mechanically alloyed materials show much better combinations of strength and fracture strain compared with the ingot-cast TiAl, indicating the effectiveness of mechanical alloying in improving the mechanical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.197-198
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• 2005

본 논문에서는 p-type (100)Si. (100)MgO 그리고 MgO/Si 기판 위에 RF Magnetron sputtering 법으로 $Ba_{0.5}Sr_{0.5}TiO_3$(BST) 박막을 증착 후 $600^{\circ}C$ 의 질소분위에서 RTA(Rapid Thermal Annealing)를 이용한 1 분간의 고온 급속열처리를 하였다. XRD 측정결과 모든 기판에서 (110) $Ba_{0.5}Sr_{0.5}TiO_3$의 주피크가 관찰되어졌고, 열처리 후 피크 세기가 증가함을 확인할 수 있었다. C-V 특성에서 각각의 기판에서 측정된 커패시턴스 값으로 계산된 유전율은 120(bare Si), 305(MgO/Si) 그리고 310(MgO)이었다. 누설 전류 특성에서는 150KV/cm이내의 인가전계에서 0.1$uA/cm^2$이하의 안정된 누설전류값을 보여주었다. 결론적으로 MgO 버퍼층을 이용한 기판이 BST 박막의 증착을 위한 기판으로써 효과적임을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.136-143
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• 2000

$SrBi_2Ta_2O_9;(SBT)$ films were deposited on p-type Si(100) at room temperature by rf magnetron sputtering method to confirm the possibility of application of $Pt/SBT/Pt/Ti/SiO_2/Si$ structure (MFM) for destructive read out ferroelectric RAM (random access memory). Their structural characteristics with the various annealing times and Ar/$O_2$ gas flow ratios in sputtering were observed by XRD (X-ray diffractometer) and the surface morphologies were observed by FE-SEM (field emission scanning electron microscopy), and their electrical properties were observed by P-V (polarization-voltage measurement) and I-V (current-voltage measurement). The Ar/$O_2$ gas flow ratios of sputtering gas were changed from 1 : 4 to 4 : 1 and SBT thin films were deposited at room temperature. The films show (105), (110) peaks of SBT by XRD measurement. SBT thin films deposited at room temperature were crystallized by furnace annealing at 80$0^{\circ}C$ in oxygen atmosphere during either one hour or two hours. Among their electrical properties, P-V curves showed shaped hysteresis curves, but the SBT thin films showed the asymmetric ferroelectric properties in P-V curves. When Ar/$O_2$ gas flow ratios are 1 : 1, 2: 1, the leakage current density values of SBT thin films are good, those values of 3 V, 5 V, and 7 V are respectively $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$.After two hours of annealing time, their electrical properties and crystallization are improved.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1411-1413
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• 2001

The $(Ba_{0.5}Sr_{0.5})(Nb_{0.5}Ti_{0.5})O_3$ [BSNT] ceramics were prepared by conventional mixed oxide method. The structural properties of the BSNT ceramics with sintering temperature were investigated by XRD, SEM, EDS. Increasing the sintering temperature, diffraction intensity of the BST(110) peak was increased. The average grain size of BSNT ceramics were increased with sintering temperature. In the case of BSNT ceramics sintered at 1550$^{\circ}C$, the grain was uniform and the pore was not existed. Increasing the sintering temperature from 1400$^{\circ}C$ to 1500$^{\circ}C$, the amount of Nb and Sr were decreased. The density of BSNT ceramics sintered at 1550$^{\circ}C$ was $1.125g/cm^2$.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.103-110
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• 1998

Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.