• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.215-221
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• 1992

This research is aimed at developing(110) preferred TiS2 cathode films and glass typed solid electro-lytes which have high ionic migrations and low electron conductivities for thin secondary solid batteries. To obtain preferred oriented TiS2 thin films on a substrate by CVD method using TiCl4 and H2S gases three factors of heating temperature, inner pressure of furnace and TiCl4/H2S gas mole fraction were ex-amined systematically. To obtain solid films of Li2O-B2O3-SiO2 electrolytes by r.f. sputtering for thin proto-type batteries of Li/Li2O-B2O3-SiO2TiS2, sputtering conditions were examined. TiS2 cathode films showed columnar structure, namely c axis oriented parallely. At low pressure of reaction chamber and low heating temperature, surface of smooth TiS2 films couldd be obtained. Ionic conductivity of Li2O-B2O3-SiO2 films manufactured by r.f. magnetron sputtering were 3$\times$10-7$\Omega$-1cm-1 and electron conductivities were 10-11$\Omega$-1cm-1. Open cell voltage of thin lithium batteries were 2.32V with a designed prototype cell.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.6
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• pp.1012-1016
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• 2008

[ $TiO_2-V_2O_5$ ] sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. As a results of crystalline properties, $V_2O_5$ peaks were not found in spite of $V_2O_5$ additive. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping. Capacitance of thin films increased with increasing heat treatment temperature and it increased largest at $700^{\circ}C$. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• Journal of Environmental Science International
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• v.16 no.6
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• pp.683-688
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• 2007

In this study, N doped $TiO_2$ (TiO-N) thin film was prepared by DC magnetron sputtering method to show the photocatalytic activity in a visible range. Various gases (Ar, $O_2\;and\;N_2$) were used and Ti target was impressed by 1.2 kW -5.8 kW power range. The hysteresis of TiO-N thin film as a function of discharge voltage wasn't observed in 1.2 and 2.9kW of applied power. Cross sections and surfaces of thin films by FE-SEM were tiny and dense particle sizes of both films with normal cylindrical structures. XRD pattern of $TiO_2$ and TiO-N thin films was appeared by only anatase peak. Red shift in UV-Vis adsorption spectra was investigated TiO-N thin film. Photoactivity was evaluated by removal rate measurement of suncion yellow among reactive dyes. The photodegradation rate of $TiO_2$ thin film on visible radiation was shown little efficiency but TiO-N was about 18%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.607-610
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• 2004

The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

• The korean journal of orthodontics
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• v.36 no.6
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• pp.451-464
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• 2006

The purpose of this study was to search for an appropriate method of coating $TiO_2$ on orthodontic appliances. $TiO_2$ thin films were deposited on orthodontic wires and brackets using sol-gel, CVD (Chemical Vapor Deposition) and PE-CVD (Plasma Enhanced-CVD) methods. The roughness of $TiO_2$-coated surfaces was investigated via scanning electron microscope (SEM) and adhesive strength of $TiO_2$ thin films was measured by adhesive tape pull test. Methylene blue degradation test was carried out to evaluate the photocatalytic activity of $TiO_2$ and the corrosion resistance of $TiO_2$ thin films against fluoride solution was also analyzed by observing the surfaces of $TiO_2$-coated wires and brackets via SEM after immersion in sodium fluoride solution. Through the comparison of properties and photocatalytic activity of $TiO_2$ thin films according to the coating methods, the following results were obtained. Smoother surfaces of $TiO_2$ thin films were generated by CVD or PE-CVD methods than through the sol-gel method or the control. Adhesive strength of the $TiO_2$ thin films was highest in PE-CVD and gradually became lower in the order of CVD, then the sol-gel method. Photocatalytic activity of $TiO_2$ thin films on methylene blue was the highest in PE-CVD and gradually became lower in the order of CVD, then the sol-gel method. Corrosion resistance of $TiO_2$ thin films against fluoride solution was stronger in CVD and PE-CVD methods than in the sol-gel method. The results of this study suggest that the CVD or PE-CVD methods is more appropriate than the sol-gel method for $TiO_2$ coating on orthodontic wires and brackets.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1188-1194
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• 2013

Transparent $TiO_2$ thin films have been prepared by sol-gel spin coating method. The sols used for deposition of thin films were prepared with different ethanol content. The effect of ethanol (solvent) concentration and annealing temperature on the performance of $TiO_2$ thin film solar cells has been studied. The results indicate that the as deposited films are amorphous in nature. $TiO_2$ thin films annealed at temperatures above $350^{\circ}C$ exhibited crystalline nature with anatase phase. The results also indicated that the crystallinity of the films improved with increase of annealing temperature. The high resolution transmission electron microscope images showed lattice fringes corresponding to the anatase phase of $TiO_2$. The band gap of the deposited films has been found to decrease with increase in annealing temperature and increase with increase in ethanol concentration. The dependents of photovoltaic efficiency of the dye-sensitized $TiO_2$ thin film solar cells (DSSCs) with the amount of ethanol used to prepare thin films was determined from photocurrent-voltage curves.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.59-62
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• 1992

In this study, $TiO_2$ thin films are fabricated by Sol-Gel method and dielectric, electric and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis reaction condition. The uniformity of the surface on $TiO_2$ thin films is confirmed by SEM. The permittivity of $TiO_2$ thin films increases according to heat treatment temperature, whereas the conductivity of $TiO_2$ thin films decreases according to heat treatment temperature, As the results of measuring humidity sensing properties of $TiO_2$ thin films fabricated as humidity sensor, it is confirmed to have good humidity sensing properties in high humidity and low frequency.