• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.681-682
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• 2013

전기는 우리 주변의 에너지 형태 중에서 가장 편리하고 광범위하게 사용되고 있다. 이러한 전기는 전자제품, 전기자동차, 에너지 저장 플랜트 등 매우 많은 분야에서 저장되고 사용되고 있다. 특히 에너지 저장 용량의 확대는 휴대폰, 노트북 PC 등 휴대용 IT 기기의 성장에 결정적인 역할을 하였다. 가볍고 작으면서도 고용량의 전기 에너지 저장 장치가 없었다면, 통신이나 인터넷 그리고 오락 등 다양한 기능을 작은 휴대용 기기에 구현할 수 없었을 것이다. 그러나 시간이 흐를수록 기기의 요구 성능이 높아지고 소비자의 니즈가 더욱더 다양해지고 고도화될수록 단일 부품으로 가장 큰 부피를 차지하는 에너지 저장 장치의 용량과 디자인은 점점 중요해지고 있다. 이러한 에너지 저장 장치에서 가장 친숙한 형태는 2차 전지 계열이다. 납 축전지를 비롯하여, 니켈수소, 니켈카드뮴, electrochemical capacitor와 Li ion 계열 등이 대표적이다. 특히 Li ion 배터리는 모바일, 자동차 및 에너지 저장 그리드 등과 같은 다양한 분야에 가장 많이 적용되고있다. Li ion 배터리에 대하여 현재의 핵심적인 연구분야는 전극 재료(cathode, anode)와 electrolyte에 대한 것이다. Anode 전극 재료 중에서 가장 많이 사용되는 재료는 카본을 기반으로 하는 재료로 안정성에 대한 장점이 있지만 에너지 밀도가 낮다는 단점이 있다. 에너지 저장 용량 증가에 대한 필요성이 증가하기 때문에 현재 많이 사용되고 있는 에너지 밀도가 낮은 카본 재료를 대체하기 위해서 이론 용량이 높다고 알려진 실리콘과 같은 메탈이나 주석 산화물과 같은 천이 금속 산화물에 대하여 많은 연구가 진행되고 있다. 특히 현재까지 알려진 많은 재료 중에서 가장 큰 capacity (~4,000 mAh/g)를 가지고 있다고 알려진 실리콘이 카본의 대체 재료로 많은 연구가 진행되고 있다. 그러나, Li 과 반응을 하며 약 300~400%에 달하는 부피팽창이 발생하고, 이러한 부피 팽창 때문에 충 방전이 진행됨에 따라 current collector로부터 박리되는 현상을 보여 빠른 용량 감소를 보여주고 있다. 본 연구에서는 adhesion layer를 current collector와 실리콘 전극 재료 사이에 삽입하여 충 방전 시 부피팽창에 의한 미세구조의 변화와 electrochemical 특성에 대한 영향을 알아보았다. 실험에 사용한 anode 전극은 상용 Cu foil current collector에 RF/DC magnetron 스퍼터링을 통해 다양한 종류(Ti, Ta 등)의 adhesion layer과 200 nm 두께의 Si 박막을 증착하였다. 또한 Bio-logic Potentiostat/ Galvanostat VMP3 와 WanAtech automatic battery cycler 장비를 사용하여 0.2 C-rate로 half-cell 타입의 코인 셀로 조립한 전극에 대한 충 방전 실험을 진행하였다. Adhesion layer의 사용으로 인해 실리콘 박막과 Cu current collector 사이의 박리 현상을 줄여줄 수 있었고, 충 방전 시 Cu 원자의 실리콘 박막으로의 확산을 통한 brittle한 Cu-Si alloy 형성을 막아 줄 수 있어 큰 특성 향상을 확인할 수 있었다. 또한, 리튬과 실리콘의 반응을 통한 형태와 미세구조 변화를 SEM, TEM 등의 다양한 장비를 사용하여 확인하였고, 이를 통해 adhesion layer의 사용이 전극의 특성향상에 큰 영향을 끼쳤다는 것을 확인할 수 있었다.

• Korean Journal of Poultry Science
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• v.24 no.3
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• pp.127-137
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• 1997

This study was conducted to estimate the laying performance and heterosis of Korean Native Chicken(KNC), Rhode Island Red(RIR), and KNC x RIR crossbreds A total of 1,274 female pullets were produced from KNC, RIR and RIR crossbreds in National Livestock Research Institute, Korea. The experiment was conducted for 2O~64 weeks from Jan 20. to Nov.25, 1996. The age at first egg of crossbreds were 144.1~148.7 days. The first egg weight of crossbreds was 39. 4~40.3 g, and body weights at first egg of KNC dark brown strain x RlR(DR), KNC light brown strain x RlR(LR) and KNC dark black strain x RlR(BR) were 1,943 g, 1,925 g and 2,044 g, respectively. During the laying period the average viability of crossbreds was 96.6~98.3%. The hen-day egg production of crossbreds were 111.1~113.O eggs at 40 weeks of age, and 223.5~227.5 eggs at 64 weeks of age, respectively. The hen-day egg production peaks were 78.2~80.1% in KNC, and 85.8~87.5% in crossbreds. The heterosis were estimated to be 3.61%, 9.21%, 4.78%, 2.97% and -1.63% for the first egg days, body weights at first egg, layer viability, hen-day egg production, and feed conversion ratio, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.1-4
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• 2006

White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Journal of the Korean Chemical Society
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• v.66 no.3
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• pp.209-217
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• 2022

We have developed photosensitive electrochromic smart windows that does not require any transparent conducting oxide (TCO) substrate. In our previous study, we demonstrated that a flexible film-type device made with a low temperature curing WO₃ sol and TiO₂ sol could show a reversible and rapid switching between colored and bleached state via incorporation of platinum catalysts on the surface of WO₃ layer. However, when these devices were exposed to sunlight over 4 hour, it was confirmed that they did not return to fully bleached state in the darkened state due to their overcoloring process. In this study, we added 4-hydroxy-(2,2,6,6-tetramethylpiperidin-1-yl)oxyl (TEMPOL) as an additive to the electrolyte of photosensitive electrochromic device to effectively prevent the undesired overcoloring process. The resulting device with TEMPOL indeed did not undergo excessive coloration and showed great reversibility even after being exposed to sunlight for over 4 hours. Various concentrations of TEMPOL were applied to compare changes in the visible transmittance and coloring/bleaching kinetics of devices. In terms of energetic point of view, we proposed a plausible mechanism of TEMPOL to prevent excessive coloration.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.508-508
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• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.330-331
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• 2005

본 논문에서는 카메라폰용 광학중(Optical zooming) 과 자동초점조절장치 (Auto Focusing, AF)에 쓰일 초음파모터를 제작하였다. 초음파모터의제작 및 시뮬레이션은 유한요소해석 프로그램인 ATILA 5.2.1 (Magsoft co.)를 사용하여 디자인설계에 따른 구동특성을 고찰하였고 제작된 초음파모터는 한쪽 면이 없는 사작형의 탄성체를 제작하였으며 탄성체의 양쪽 다리에 각각 압전체를 부착하였다. 또한 압전세라믹의 조성은 $0.9Pb(Zr_{0.51}Ti_{0.49})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$의 조성으로 설계하였고 시편의 제조는 7-layer로 적층하였다. 제작된 압전세라믹의 치수는 6*2*0.35$mm^3$(길이*폭*두께)로 제작하였다 또한 탄성체의 외형치수는 10*10*2$mm^3$로 제작하였으며 두께를 각각 0.3[mm], 0.5[mm], 0.8[mm]으로 변화시키며 제작하였다. 두께가 0.8[mm]인경우 공진주파수는 60.5[kHz]를 나타내었으며 초음파모터의 압전세라믹에 인가전압이 증가함에 따라 회전속도와 모터에 흐르는 전류는 증가하였다. 인가전압이 40[Vpp] 일 때 회전속도는 206[rpm] 이며 소비전력은 0.3[W]로 제작된 시편은 카메라폰용 광학중 및 자동초점조절장치시스템 분야에 응용이 가능하다.

• Journal of Powder Materials
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• v.24 no.2
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• pp.133-140
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• 2017

This study investigates the oxidation properties of Fe-14Cr ferritic oxide-dispersion-strengthened (ODS) steel at various high temperatures (900, 1000, and $1100^{\circ}C$ for 24 h). The initial microstructure shows that no clear structural change occurs even under high-temperature heat treatment, and the average measured grain size is 0.4 and $1.1{\mu}m$ for the as-fabricated and heat-treated specimens, respectively. Y-Ti-O nanoclusters 10-50 nm in size are observed. High-temperature oxidation results show that the weight increases by 0.27 and $0.29mg/cm^2$ for the as-fabricated and heat-treated ($900^{\circ}C$) specimens, and by 0.47 and $0.50mg/cm^2$ for the as-fabricated and heat-treated ($1000^{\circ}C$) specimens, respectively. Further, after 24 h oxidation tests, the weight increases by 56.50 and $100.60mg/cm^2$ for the as-fabricated and heat-treated ($1100^{\circ}C$) specimens, respectively; the latter increase is approximately 100 times higher than that at $1000^{\circ}C$. Observation of the surface after the oxidation test shows that $Cr_2O_3$ is the main oxide on a specimen tested at $1000^{\circ}C$, whereas $Fe_2O_3$ and $Fe_3O_4$ phases also form on a specimen tested at $1100^{\circ}C$, where the weight increases rapidly. The high-temperature oxidation behavior of Fe-14Cr ODS steel is confirmed to be dominated by changes in the $Cr_2O_3$ layer and generation of Fe-based oxides through evaporation.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.215-220
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• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.