• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.194-194
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• 2008

Lead oxide based ceramics, represented by PZT, are the most widely used materials for piezoelectric actuators, sensors, and transducers due to their excellent piezoelectric properties. In particular, high-performance multilayered piezoelectric ceramics for advanced electronic components have drawn great attention. In order to develop piezoelectric ceramics capable of being sintered at low temperature for multilayer piezoelectric device applications, the effect of CuO additions on the microstructures and electromechanical properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ ceramics was investigated. The samples with CuO addition were synthesized by ordinary sintering technique. X-ray diffractions indicated that all samples formed a single phase perovskite structure. The addition of CuO improved the sinterability of the samples and caused an increase in the density and grain size at low temperature. The optimum sintering temperature was lowered by CuO additions. Excellent piezoelectric and electromechanical responses, $d_{33}$ ~ 663 pC/N, $k_p$ ~ 0.72, were obtained for the samples of high density with 0.1 wt% CuO addition sintered at $1050^{\circ}C$ for 4 h in air. These results show that the piezoelectric properties of PMNZT ceramics can be improved by controlling the microstructure and this system is potentially a good candidate as multilayer piezoelectric device for a wide range of electro-mechanical transducer applications.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.505-509
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• 1997

FRAM(Ferroelectric Random Access memory)에의 응용을 위해 rf magnetron sputtering법을 이용하여 SrB $i_{2}$T $a_{2}$ $O_{9}$(SBT)박막을 증착하였다. 사용된 기판은 Pt/Ti/Si $o_{2}$Si이었으며 50$0^{\circ}C$에서 증착한 후 80$0^{\circ}C$의 산소 분위기 하에서 1시간 동안 열처리하였다. 증착시 증착 압력을 변화시켜 가면서 이에 따른 특성의 변화를 고찰하였다. 박막내의 Bi와 Sr의 부족을 보상하기 위해 20mole%의 Bi $O_{2}$와 30mole%의 SrC $O_{3}$를 과잉으로 넣어 타겟을 제조후 사용하였고 박막들의 두께는 300nm의 두께를 가지며 증착압력에 따라 다른 미세 구조르 보였다. 10mtorr에서 증착한 박막의 조성은 S $r_{0.6}$B $i_{3.8}$Ta/ sub 2.0/ $O_{9.0}$이었다. 이 SBT 박막의 잔류 분극(2 $P_{r}$)과 보전계(2 $E_{c}$)값은 각각 인가 전압 5V에서 18.5 $\mu%C/$\textrm{cm}^2$과 150kV/cm이었고, signal/noise비는 3V에서 4.6을 나타내었다. 5V의 bipolar pulse하에서 $10^{10}$cycle까지 피로 현상이 나타나지 않았으며, 누설 전류 밀도는 133kV/cm에서 약 1x$10^{-7A}$$\textrm{cm}^2$의 값을 보였다.을 보였다.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.589-597
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• 2010

In the present study, the effect of variation in alloying elements on the carbide formation behavior during casting and homogenization treatment of M2 high speed steels was investigated. M2 high speed steels of various compositions were produced by vacuum induction melting. Contents of C, Cr, W, Mo, and V were varied from the basic composition of 0.8C, 0.3Si, 0.2Mn, 4.0Cr, 6.0W, 5.0Mo, and 2.0V in weight percent. Homogenization treatment at $1150^{\circ}C$ for 1.5 hr followed by furnace cooling was performed on the ingots. Area fraction and chemical compositions of eutectic carbide in as-cast and homogenized ingots were analyzed. Area fraction of eutectic carbide appeared to be higher in the ingots with higher contents of alloying elements the area fraction of eutectic carbide also appeared to be higher on the surface regions than in the center regions of ingots. As a result of the homogenization treatment, $M_2C$ carbide, which was the primary eutectic carbide in the as-cast ingots, decomposed into thermodynamically stable carbides, MC and $M_6C$. The latter carbide was found to be the main one after homogenization. Fine carbides uniformly distributed in the matrix was found to be MC type carbide and coarsened by homogenization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.707-711
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• 2014

The $0.99Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-0.01LaAlO_3$, $0.01LaMnO_3$ or $0.01LaFeO_3$ (0.99BNKT-0.01LA, 0.01LM or 0.01LF) ceramics were prepared by a conventional mixed mothod. The structure and morphology of the lead free ceramics were characterized by XRD (X-ray diffraction) and FE-SEM (field emission scanning electron microscopy). XRD results indicated that the BNKT ceramics modified by LA, LM or LF induced a transition from a ferroelectric tetragonal to a non-polar pseudo-cubic phase, leading to decrease in the remnant polarization ($P_r$) and coercive field ($E_c$) in the P-E hysterisis loops. The effects of the BNKT ceramics modified by La-based $ABO_3$ pervskite structure on the electric-field induced strain were investigated, and the largest normalized unipolar strain ($S_{max}/E_{max}$) was found in BNKT-0.01LF ceramic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.295-295
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• 2007

기계적 에너지를 전기적 에너지로 변화하는 에너지 변환소자인 압전 세라믹스는 액츄에이터, 변압기, 초음파모터, 초음파 소자 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근 이러한 에너지 변화 소자는 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics, 항공우주, 자동차, 의료, 건축, MEMS 분야 등의 대체 에너지원으로 응용하기 위한 연구가 진행되고 있다. 특히 인간의 동작 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수가 있어서, 기존 이차전지, 연료전지를 대체 또는 보완 할 수 있는 방안도 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 압전특성으로 전자세라믹스분야에서 가장 널리 사용되어지고 있지만 $1200^{\circ}C$이상의 높은 소결온도 때문에 $1000^{\circ}C$ 부근에서 급격히 휘발되는 PbO로 인한 환경오염과 기본조성의 변화로 인한 압전 특성의 저하가 문제시되고 있다. 또한, 적층 세라믹스의 제작 시 구조적 특성상 내부 전극이 도포된 상태에서 동시 소결이 필요한데, 융점이 낮은 Ag전극 대신 값비싼 Pd나 Pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제적인 문제가 발생하게 된다. 따라서 순수 Ag 전극을 사용하거나, Ag의 비율이 높은 내부 전극을 사용하기 위해서는 $950^{\circ}C$ 이하에서 소결되는 압전 세라믹스를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)\;[(Ni_{1/3}/Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}]O_3$계의 조성을 설계하여, 소결온도를 낮추기 위해서 2단계 하소법을 이용하였다. 분말을 ball milling을 통해 24시간 동안 혼합하였다. 혼합된 분말은 $800^{\circ}C$에서 2시간 동안 하소하였다. 하소한 분말을 72시간 동안 ball milling 하여 최종 분말을 얻었다. 최종 분말에 PVB를 첨가하여 ${\Phi}21$ disk 형태로 성형한 후, $800{\sim}950^{\circ}C$ 소결을 하였다. 최종 분말 및 소결된 시편을 XRD분석을 통하여 상을 확인하였고, SEM을 이용하여 미세조직을 관찰하였다. 전기적 특성을 확인하기 위하여 두께 1mm로 연마한 시편에 Ag 전극을 도포하여 열처리한 후, 분극 처리하였다. 압전특성은 $d_{33}$ 미터로 측정하였고, impedance analyzer를 이용하여 주파수 및 impedance 특성을 측정하였다. 그 결과 $900^{\circ}C$에서 우수한 압전 특성 및 전기적 특성을 확보 할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.237-242
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• 2015

$Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3$ (BNKT) lead-free piezoelectric ceramics modified by $LaMnO_3$ (LM) were fabricated by conventional solid-state method. The crystal structure and the morphology of the lead free ceramics were analyzed by XRD (X-ray diffraction) and FE-SEM (Field Emission Scanning Electron Microscopy). The LM modified BNKT ceramics have a phase transition from ferroelectric tetragonal to non-polar pseudo-cubic. Despite decreases in the remnant polarization ($P_r$) and coercive field ($E_c$) in the P-E hysteresis loops, the electric-field induced strain properties were significantly enhanced by the LM modification. The highest value of $S_{max}/E_{max}=412pm/V$ at an applied electric field of 5 kV/mm was found in BNKT-0.01LM ceramic.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.129-133
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• 2016

$MnO_2$ was added to the $0.95(Na_{0.5}K_{0.5})NbO_3-0.05CaTiO_3$ (NKN-CT) ceramics in order to promote the densification and improve the poling efficiency by increasing the resistance of the specimens. Densification and abnormal grain growth occurred in the $MnO_2$-added NKN-CT ceramics sintered at $1020^{\circ}C$, indicating that $MnO_2$ assisted the liquid-phase sintering of these materials. $Mn^{3+}$ ions were considered to enter the A-site of the matrix, thereby producing the free electrons, which interacted with the holes resulting from the evaporation of alkali ions. This interaction results in an increase in the resistance of the specimens. The increased resistance improved the poling efficiency and, hence, the dielectric and piezoelectric properties of the NKN-CT ceramics. A few of the $Mn^{3+}$ ions that entered the B-site of the NKN-CT matrix led to a slight increase in the mechanical quality factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.