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http://dx.doi.org/10.5369/JSST.2014.23.5.337

Temperature vs. Resistance Characteristics by Dopants of VO2 Thick-Film Critical Temperature Sensors  

Choi, Jung Bum (Department of Materials Science and Engineering, University of Seoul)
Kang, Chong Yun (Electronic Materials Research Center, Korea Institute of Science and Technology)
Yoon, Seok-Jin (Electronic Materials Research Center, Korea Institute of Science and Technology)
Yoo, Kwang Soo (Department of Materials Science and Engineering, University of Seoul)
Publication Information
Journal of Sensor Science and Technology / v.23, no.5, 2014 , pp. 337-341 More about this Journal
Abstract
For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.
Keywords
Vanadium oxide; Temperature sensor; Critical temperature resistor; Thick film;
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