• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.87-95
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• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.35-35
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• 2003

Recent progress in the integration of the ferroelectric random access memories (FRAM) has attracted much interest. Strontium bismuth tantalate(SBT) is one of the most attractive materials for use in nonvolatile-memory applications due to low-voltage operations, low leakage current, and its excellent fatigue-free property. High-density FRAMs operated at a low voltage below 1.5V are applicable to mobile devices operated by battery. SBT films thinner than 0.1 #m can be operated at a low voltage, because the coercive voltage (Vc) decreases as the film thickness is reduced. In addition, the thickness of the SBT film will have to be reduced so it can fit between adjacent storage nodes in a pedestal type capacitor in future FRAMs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.7-14
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• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.73-76
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• 2002

박막 다이오드의 전기적 특성에 미치는 전극 구조의 영향을 관찰하였다. 박막 다이오드는 하부전극-절연층($Ta_{2}O_{5}$)-상부전극의 3층 구조로 설계 및 제작하였고, 하부 전극으로 Ta, 상부 전극으로 Cr 및 Ti를 각각 사용하였다. Cr을 상부 전극으로 사용한 결과 비대칭비가 1.8인 높은 비대칭 특성을 나타내었다. 그러나 Ti 상부 전극의 경우 반대의 경향을 나타내었다. 이들을 각각 $150^{\circ}C$에서 열처리한 결과 Cr 상부 전극 다이오드는 비대칭비가 1.4로 여전히 비대칭 경향을 나타내었으나, Ti 상부 전극의 박막 다이오드는 비대칭비가 1.1로 대칭에 가까운 우수한 특성을 나타내었다.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.15-20
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• 1996

The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFET to vary with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing tile drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about $70{\AA}$ thick by sol-gel method on $Si_{3}N_{4}/SiO_{2}$-gate of pH-ISFET. The fabricated $Ta_{2}O_{5}$-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH $3{\sim}11$, and had relatively small average pH drift of about 0.06 pH/day.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.453-456
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• 2010

Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.66-70
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• 2004

The Sr$\_$0.7/Bi$\_$2.3/Ta$_2$O$\_$9/(SBT)thin films are deposited on Pt-coated electrode (Pt/TiO$_2$/SiO$_2$/Si) using a RE magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing times were studied. As a result of conducting the X-ray diffraction analysis and the electron microscopy analysis, the perovskite phase began to grow from 10 minutes after annealing the specimen, and excellent crystallization was accomplished at 60 minutes after annealing the specimen. The remanet polarization (2P$\_$r/) value and the coercive electric field (E$\_$c/) of the SBT thin film specimen showed the most excellent characteristics at 60 minutes after annealing the specimen, which were approximately 12.40 C/$\textrm{cm}^2$ and 30 kV/cm, respectively. The leakage current density of the SBT thin film specimen as annealed for 60 minutes was approximately 2.81${\times}$10$\^$－9/A/$\textrm{cm}^2$.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.38-41
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• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• 전자공학회논문지 IE
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• v.43 no.1
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• pp.1-4
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• 2006

The characteristics of polymeric thin-film transistors(TFTs) can be controlled by chemically modifying the surface of the gate dielectric prior to the organic semiconductor. The chemical treatment consists of derivative the tantalum pentoxide($Ta_2O_5$) surface with organic materials to form self-assembled monolayer(SAM). The deposition of an octadecyl-trichlorosilane(OTS), hexamethy-ldisilazone(HMDS), aminopropyltreithoxysilane(ATS) SAM leads to a mobility of $0.01\sim0.06cm2/V{\cdot}s$ in a poly-3-hexylthiophene(P3HT) conjugated polymer. The mobility enhancement mechanism is likely to involve molecular interactions between the polymer and SAM. These result can be used for polymer TFT's dielectric material.