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Characteristics of Self assembled Monolayer as $Ta_2O_5$ Dielectric Interface for Polymer TFTs  

Choi, Kwang-Nam (Dept. of Electronics Engineering, Kyunghee University)
Kwak, Sung-Kwan (Dept. of Electronics Engineering, Kyunghee University)
Chung, Kwan-Soo (Dept. of Electronics Engineering, Kyunghee University)
Kim, Dong-Sik (Dept. of Computer System & Engineering, Inha Technical College)
Publication Information
전자공학회논문지 IE / v.43, no.1, 2006 , pp. 1-4 More about this Journal
Abstract
The characteristics of polymeric thin-film transistors(TFTs) can be controlled by chemically modifying the surface of the gate dielectric prior to the organic semiconductor. The chemical treatment consists of derivative the tantalum pentoxide($Ta_2O_5$) surface with organic materials to form self-assembled monolayer(SAM). The deposition of an octadecyl-trichlorosilane(OTS), hexamethy-ldisilazone(HMDS), aminopropyltreithoxysilane(ATS) SAM leads to a mobility of $0.01\sim0.06cm2/V{\cdot}s$ in a poly-3-hexylthiophene(P3HT) conjugated polymer. The mobility enhancement mechanism is likely to involve molecular interactions between the polymer and SAM. These result can be used for polymer TFT's dielectric material.
Keywords
Ta2O5; Polymer TFT; dielectric; poly-3-hexylthiophene(P3HT);
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