• 제목/요약/키워드: $Ta_2O_{5}$

검색결과 519건 처리시간 0.023초

하소온도가 $Ba[Mg_{1/3}(Nb_{0.2}Ta_{0.8})_{2/3}]O_3$ 세라믹스의 물리적 특성에 미치는 영향 (The Effect of Calcination Temperature on Physical Properties of $Ba[Mg_{1/3}(Nb_{0.2}Ta_{0.8})_{2/3}]O_3$ Ceramics)

  • 김재윤;김부근;김강언;정수태;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.252-255
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    • 1999
  • The effect of calcination temperature(1st and 2nd calcining at 110$0^{\circ}C$ , 120$0^{\circ}C$ and 130$0^{\circ}C$ respectively) on physical properties of BMNT Ceramics ware investigated. The optimum 1st and 2nd calcination temperature were 120$0^{\circ}C$ , and sintering temperature was 155$0^{\circ}C$. In this condition, the sintering density was 7.53 [g/㎤] and the dielectric constant, Q.f$_{0}$ and $\tau$$_{r}$ were 26, 80, 300[GHz] and +1.5[ppm/$^{\circ}C$] respectively in the microwave range.e.e.

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Ta2O5 박막증착에서 플라즈마 전 처리를 통한 Polycarbonate와 Polyethersulphone 기판의 표면 개질 (The Plasma Modification of Polycarbonate and Polyethersulphone Substrates for Ta2O5 Thin Film Deposition)

  • 강삼묵;윤석규;정원석;윤대호
    • 한국세라믹학회지
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    • 제43권1호
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    • pp.38-41
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    • 2006
  • Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

BaR0.5+xTa0.5-xO3-δ (R=희토류 금속)계 Proton 전도체 특성에 미치는 수분의 영향 (Humidity Effect on the Characteristics of the Proton Conductor Based on the BaR0.5+xTa0.5-xO3-δ (R=Rare Earth) System)

  • 최순목;서원선;정성민;김신;이홍림
    • 한국세라믹학회지
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    • 제45권5호
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    • pp.290-296
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    • 2008
  • $AB'_{0.5}B"_{0.5}O_3$ type complex perovskite structures which have been reported as proton conductors over $600^{\circ}C$ were studied. The $AB'_{0.5}B"_{0.5}O_3$ type complex perovskite structure is known to be more easily synthesized and has better stability than normal $ABO_3$ perovskite structure. And it is stable at about $800^{\circ}C$ in the $CO_2$ atmosphere, whereas the $BaCeO_3$ perovskite is easily decomposed into carbonate. In addition, this $AB'_{0.5}B"_{0.5}O_3$ type complex perovskite structure could simply produce oxygen vacancies within their structure not by introducing additional doping oxides but by just controling the molar ratio of $B'^{+3}$ and $B"^{+5}$ metal ions in the B site. Hence it is easy to design the structure which shows highly sensitive electrical conductivity to humidity. In this study, the single phase boundary of $BaR_{0.5+x}Ta_{0.5-x}O_{3-{\delta}}$(R = rare earth) complex perovskite structures and it's phase stability were investigated with changes in composition, x. And the humidity dependance of electrical conductivity at different $P_{H2O}$ conditions was investigated.

비납계 0.98 (Na0.44K0.52)Nb0.84O3-0.02Li0.04 (Sb0.06Ta0.1)O3-0.5 mol%CuO 세라믹스의 전기적, 구조적 특성 (Electrical and Structural Properties of Lead Free 0.98 (Na0.44K0.52)Nb0.84O3-0.02Li0.04 (Sb0.06Ta0.1)O3-0.5 mol%CuO Ceramics)

  • 이승환;남성필;이성갑;이영희
    • 한국전기전자재료학회논문지
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    • 제24권2호
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    • pp.116-120
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    • 2011
  • The 0.98 ($Na_{0.44}K_{0.52})Nb_{0.84}O_3-0.02Li_{0.04}$ ($Sb_{0.06}Ta_{0.1})O_3-0.5$ mol%CuO ceramics have been fabircated by ordinary sintering technique and the effect of various calcination method on the electrical propertis and microstructure have been studied. It was observed that the various calcination method influenced the elelctrical properties and structural properties of the 0.98NKN-0.02LST-0.5 mol%CuO ceramics with the optimum piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) at room temperature of about $155{\rho}C/N$ and 0.349, respectively, from 0.98NKN-0.02LST-0.5 mol%CuO ceramics sample. The curie temperature ($T_c$) of this ceramic was found at $440^{\circ}C$. The 0.98NKN-0.02LST-0.5 mol%CuO ceramics are a promising lead-free piezoelectric ceramics.

RF 마그네트론 스퍼터링법에 의한 MFM 구조의 $SrBi_2Ta_2O_9$ 박막 특성에 관한 연구 (A study on the characteristics of MEM structure of $SrBi_2Ta_2O_9$ thin films by RE magnetron sputtering)

  • 이후용;최훈상;최인훈
    • 한국진공학회지
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    • 제9권2호
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    • pp.136-143
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    • 2000
  • RF magnetron sputtering법으로 $SrBi_2Ta_2O_9$ (SBT)박막을 상온에서 p-type Si(100) 기판위에 증착하여 DRO 강유전체 메모리(destructive read out ferroelectric random access memory)에 사용되는 강유전체막으로 Pt/SBT/Pt/Ti/$SiO_2$/Si (MFM)구조의 응용가능성을 확인하였다. 구조적인 특징들이 열처리 시간의 변화와 Ar/$O_2$의 가스 유량비의 변화에 따라서 XRD(x-ray diffractometer)에 의해 관찰되었으며 표면 특성은 FE-SEM(field emission scanning electron microscopy)에 의해서 관찰하고 박막의 전기적 특성들은 P-V(polarization-voltage measurement)와 I-V(current-voltage measurement)를 사용하여 관찰하였다. 스퍼터링 증착시 Ar/$O_2$의 가스 유량비는 1:4에서 4:1까지 변화 시켰고 SBT박막은 상온에서 증착시켰다. XRD 측정시 박막들은 SBT의 (105), (110) peak들을 나타내었다. 상온에서 증착시킨 박막은 1시간, 2시간 동안 산소 분위기에서 $800^{\circ}C$ 열처리를 하여 결정화 시켰다. SBT 박막의 P-V곡선은 이력 곡선의 모양을 갖추었으며 비대칭적인 강유전체 특성을 나타내었다. Ar/$O_2$ 가스유량비가 1 : 1, 2 : 1인 경우에 박막의 누설 전류밀도 값이 제일 좋았으며, 그 값은 3V 5V 7V에서 각각 $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$ 이었다. 열처리 시간을 2시간으로 증가시킨 후, 그들의 전기적 특성과 결정화특성이 개선됨을 확인하였다. AES 분석 및 EPMA분석으로 SBT박막의 깊이 분포 및 조성을 확인하였다.

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Preparation of ferroelectric SrBi2Ta2O9 thin films deposited by multi-target sputtering

  • Hoon, Yang-Cheol;Gil, Yoon-Soon
    • Journal of Korean Vacuum Science & Technology
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    • 제2권2호
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    • pp.92-96
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    • 1998
  • Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

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PREFERRED ORIENTATION AND MICROSTRUCTURE OF MOD DERIVED SrBi$_{2x}$Ta$_2$O$_9$ THIN FILMS WITH Bi CONTENT x

  • Yeon, Dae-Joong;Park, Joo-Dong;Oh, Tae-Sung
    • 한국표면공학회지
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    • 제29권6호
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    • pp.621-627
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    • 1996
  • $SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.

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Ta2O5/SiO2를 이용한 고출력 광섬유 레이저의 펌프 LD 보호기용 반사형 필터 설계 및 제작 (Design and Fabrication of Reflection-type Pump LD Protection Filters for High Power Fiber Lasers by Using Ta2O5/SiO2 Thin Films)

  • 성하민;김재헌;이석;전영민
    • 한국광학회지
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    • 제23권3호
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    • pp.124-127
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    • 2012
  • 본 논문에서는 고출력 광섬유 레이저에서 역입사되는 레이저 광으로부터 펌프 LD를 보호하기 위한 반사형 2색 필터를 설계하고 제작하였다. 펌프 LD 발진 파장인 905 nm~925 nm 대역에서 투과율은 0.1%이하, 광섬유 레이저 출력 반사광이나 브릴루앙 산란광 파장대역인 1020 nm~1100 nm 대역에서 투과율은 99.9% 이상이 되도록 필터를 설계하였다. 기판(Substrate)은 $SiO_2$로 사용하고 접착력이 우수한 Oxide 계열 물질인 $SiO_2/Ta_2O_5$를 박막 재료로 사용하였다. 최적화된 설계를 한 후 필터를 제작하였고, 그 특성을 비교하였다. 제작된 필터의 투과율이 905 nm ~ 925 nm 대역에선 0.1%이하, 1020 nm~1100 nm 대역에선 95.5%이상으로 측정되어 공정오차를 고려한 설계범위 안에 들어옴을 확인하였다. 제작된 필터는 레이저 출력 1W이상의 입력광에 대해서도 정상 동작함을 확인하였다.

수소연료전지용 탄탈륨 탄화물에 대한 암모니아 분해반응 (Ammonia Decomposition Over Tantalum Carbides of Hydrogen Fuel Cell)

  • 최정길
    • 신재생에너지
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    • 제9권1호
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    • pp.51-59
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    • 2013
  • Tantalum carbide crystallites which is to be used for $H_2$ fuel cell has been synthesized via a temperature-programmed reduction of $Ta_2O_5$ with pure $CH_4$. The resultant Ta carbide crystallites prepared using two different heating rates and space velocity exhibit the different surface areas. The $O_2$ uptake has a linear relation with surface area, corresponding to an oxygen capacity of $1.36{\times}10^{13}\;O\;cm^{-2}$. Tantalum carbide crystallites are very active for hydrogen production form ammonia decomposition reaction. Tantalum carbides are as much as two orders of magnitude more active than Pt/C catalyst (Engelhard). The highest activity has been observed at a ratio of $C_1/Ta^{{\delta}+}=0.85$, suggesting the presence of electron transfer between metals and carbon in metal carbides.