• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.157-158
• /
• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 C
• /
• pp.1439-1441
• /
• 1994

This paper propose a new $Ta_2O_5$ film fabrication technique by Laser CVD. Laser CVD is noticable that film formation can be done at low temperature with less damage. After film deposition, the characteristics of Laser CVD $Ta_2O_5$ film is evaluated.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
• /
• pp.85-90
• /
• 1998

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

• Journal of Magnetics
• /
• 제11권3호
• /
• pp.139-142
• /
• 2006

We fabricated new one-dimensional magnetophotonic crystal (1D-MPC) utilizing the second and third photonic band gaps where localized modes existed. Structure of the 1D-MPC was $(Ta_{2}O_{5}/SiO_{2})_{5}/Bi:YIG/(SiO_{2}/Ta_{2}O_{5})_{5}$ with optical thicknesses of 3$\lambda$ /4 for $Ta_{2}O_{5} and $SiO_2$ dielectric layers and $\lambda$ /2 for Bi:YIG defect layer, where $\lambda$ is a wavelength of a localized mode in the second photonic band gap. Faraday rotation at the localized mode in the second photonic band gap was enhanced, which was confirmed by calculation using 4${\times}$4 matrix method.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2000년도 하계학술발표회
• /
• pp.182-183
• /
• 2000

유전체 층으로 SiO$_2$와 Ta$_2$O$_{5}$ , 자성층으로 Bi:YIG를 가지는 구조 (SiO$_2$/Ta$_2$O$_{5}$ )$_{5}$ /Bi:YIG/(Ta$_2$O$_{5}$ /SiO$_2$)$_{5}$ 의 1차원 자성 포토닉 결정의 광학적 및 자기광학적 특성을 수치해석을 통하여 계산하고$^{(2)}$ , 이를 바탕으로 1차원 자성 포토닉 결정을 RF magnetron sputtering과 rapid thermal annealing 방법을 이용하여 제작하였다.$^{(1)}$ 제조된 자성 포토닉 결정은 선명한 포토닉 밴드갭을 보였고, 원하는 파장에서 큰 페러데이 회전각과 투과율이 얻어졌다. (중략)

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1993년도 추계학술대회 논문집
• /
• pp.6-9
• /
• 1993

본 연구에서는 소량(lmol%)의 MnO$_2$를 첨가한 Ba(Zn$_{1}$3Ta$_{2}$3)O$_3$에서 미량(x)외 Ba를 결핍 시켜가면서 마이크로파 유전 특성과 소결성, 구조적 특성을 관찰하였다. XRD분석을 통하여 Ba의 부족량이 증가함에 따라 Ba(Zn$_{1}$3/Ta$_{2}$3/)O$_3$B site의 규칙화와 격자 비틀림(Lattice Distortion)이 촉진되었다. 무부하 Q값은 10.5GHz에서 x가 0.01일때 가장 높은 간(8500)을 나타내었으나 이 후에는 급격히 감소하였고 온도 계수는 Ba의 부족량이 중가함에 따라 중가하였고, x가 0.01일때는 약 2ppm/$^{\circ}C$였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.98-100
• /
• 2003

The microwave dielectric properties and microstructure of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated. All sample of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were prepared by conventional mixed oxide method. The sintering temperature was $1375^{\circ}C{\sim}1450^{\circ}C$. The structural properties of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated by X-ray diffractormeter. According to the X-ray diffraction patterns of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics, the major phase of the hexagonal $Mg_4Ta_2O_9$ were presented. In the case of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics sintered at $1425^{\circ}C$, density, dielectric constant, quality factor were $5.799g/cm^2$, 23.26, 40,054 GHz, respectively.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.87-87
• /
• 2003

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1992년도 춘계학술발표회
• /
• pp.140-141
• /
• 1992

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
• /
• pp.38.1-38.1
• /
• 2004