• Applied Chemistry for Engineering
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• v.4 no.3
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• pp.497-504
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• 1993

The effect of DCCA (Drying Control Chemical Additives) on the drying of gel was investigated in order to determine an optimum drying condition of mullite precursor through sol-gel process. Aluminium sec-butoxide was synthesized from aluminium foil and then mullite powders were synthesized from Tetra-ethyl-ortho-silicate (TEOS) and the aluminium sec-butoxide. N, N-dimethyl formamide (DMF), Glycerol, 1, 4-Dioxane, and Oxalic acid were used as DCCA. Mullite powders that were calcined at 200, 900, 1100, and $1250^{\circ}C$ for 2hr were analysed by XRD, TG-DTA, FT-IR, and SEM in order to investigate structural change and characteristics of calcined powders. The results of this work showed that the drying time of gel was reduced to about half in the presence of 0.1mol DMF compared with the absence of DCCA and also calcined powders were obtained without remarkable structural change despite of the addition of DCCA.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.228-238
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• 1992

An investigation on the step-coverage of PECVD and $O_3$ ThCVD oxides was undertaken to implement into the void-free inter metal dielectric planarization using multi-chamber system for the submicron double level metallization. At various initial aspect ratios the instantaneous aspect ratios were measured through modelling and experiment by depositing the oxides up to $0.9{\mu}m$ in thickness in order to monitor the onset of void formation. The modelling was found to be in a good agreement with the observed instantaneous aspect ratio of TEOS-based PECVD oxide whose re-entrant angle was less than $5^{\circ}$. It is demonstrated that either keeping the instantaneous aspect ratio of PECVD oxide as a first layer less than a factor of 0.8 or employing Ar sputter etch to create sloped oxide edge ensures the void-free planarization after$O_3$ ThCVD oxide deposition whose step-coverage is superior to PECVD oxide. It has been observed that $O_3$ ThCVD oxide etchback scheme has shown higher yield of via contact chain than non etchback process, with resistance per via contact of $0.1~0.3{\Omega}/{\mu}m^2$.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.459-465
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• 2014

In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1364-1369
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• 2005

In this paper, we have identified the mechanism of C-V hysteresis behavior often observed in pentacene organic thin-film transistors (OTFTs). The capacitance-voltage (C-V) characteristics were measured for pentacene OTFTs fabricated on glass substrates with MoW as gate/source/drain electrode and TEOS $SiO_2$ as gate insulator. The measurements were made at room temperature and elevated temperatures. From the room temperature measurements, we found that the hysteresis behavior was caused by hole injection into the gate insulator from the pentacene semiconductor for large negative gate voltages, resulting in the negative flat-band voltage shift. However electron injection was observed only at elevated temperatures

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.35-40
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• 2000

Teflon-like fluorocarbon thin film was deposited on various substrates by vapor deposition using PFDA (perfluorodecanoic acid). The fluorocarbon films were characterized by static/dynamic contact angle analysis, VASE (Variable-angle Spectroscopic Ellipsometry) and AFM/LFM (Atomic/Lateral Force Microscopy). Based on Lewis Acid/Base theory, the surface energy ($S_{E}$) of the films was calculated by the static contact angle measurement. The work of adhesion (WA) between de-ionized water and substrates was calculated by using the static contact data. The fluorocarbon films showed very similar values of the surface energy and work of adhesion to Teflon. All films showed larger hysteresis than that of Teflon. The roughness and relative friction force of films were measured by AFM and LFM. Even though the small reduction of surface roughness was found on film on $SiO_2$surface, the large reduction of relative friction farce was observed on all films. Especially the relative friction force on TEOS was decreased a quarter after film deposition. LFM images showed the formation of "strand-like"spheres on films that might be the reason far the large contact angle hysteresis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.92-98
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• 2012

The co-precipitation technique has been applied to synthesize biphasic calcium phosphate (BCP). $Ca(NO_3)_2{\cdot}4H_2O$, $(NH_4)_2HPO_4$, TEOS and $Mg(NO_3)_2{\cdot}6H_2O$ as the starting materials was used. After the heat treatment of powder crystalline phases HAp and ${\beta}$-TCP analysis showed a mixed phase. The overall spectra appear to have mainly two modes corresponding to characteristic $PO^{3-}_4$ and $OH^-$ groups. After immersion in Hanks' Balanced Salt Solution (HBSS) for 1 week a precipitation started to be formed with individual small granules on the specimen surface. An MTT assay indicated that ionic substituted BCP powders had no cytotoxic effects on MG-63 cells, and that they have good biocompatibility.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.261-261
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• 2010

본 연구에서는 PBMS (Particle Beam Mass Spectrometer)와 ISPM (In-Situ Particle Monitor)을 연계하여 BPSG (Borophosphosilicate Glass) 및 PSG (Phosphosilicate Glass) 박막 증착을 위한 CVD (chemical vapor deposition) 공정 중 발생하는 오염입자 발생특성에 대해 비교 평가하였다. 소스는 TEB (Triethylborate), TEPO (Triethylphosphate) 및 TEOS (Tetraethoxysilane)를 사용하였고, 운반가스 및 반응가스로 He과 $O_2$ 및 $O_3$를 사용하였다. 증착온도와 압력은 각각 $450^{\circ}C$, 200 Torr 이었다. 반응기의 배기라인에 PBMS와 ISPM을 설치하고 500 nm 이하의 입자에 대해 공정단계별 시간에 따른 모니터링 결과 전 공정에 걸쳐 동일한 패턴의 입자발생분포를 보였으며, 특히 PBMS의 경우 ISPM의 입자측정한계인 260 nm 이하의 입자크기도 측정할 수 있었다. 입자발생이 안정적으로 일어나는 증착공정 중 PBMS를 통하여 입자크기를 측정한 결과 BPSG의 경우 약 110 nm, PSG의 경우 약 80 nm의 분포를 나타내었다. 이를 통해 TEB 소스가 배제된 PSG의 경우 BPSG의 경우보다 입자의 성장이 지체됨을 확인하였다. 측정에 대한 신뢰성을 확보하기 위해 PBMS 내의 TEM (Transmission Electron Microscopy) grid를 이용하여 입자를 샘플링 하였고, TEM 분석을 실시한 결과 PBMS 측정결과와 잘 일치하였다. 또한 EDS (Energy Dispersive Spectroscopy) 분석을 통하여 입자성분에 대해 검증하였다.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.689-693
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• 2014

Anti-reflection coating films have used to increase the transmittance of displays and enhance the efficiency of solar cells. Hydrophobic anti-reflection coating films were fabricated on a glass substrate by sol-gel method. To fabricate an anti-reflection film with a high transmittance, poly ethylene glycol (PEG) was added to tetraethyl orthosilicate (TEOS) solution. The content of PEG was changed from 1 to 4 wt% in order to control the morphology, thickness, and refractive index of the $SiO_2$ thin films. The reflectance and transmittance of both sides of the coated thin film fabricated with PEG 4 wt% solution were 0.3% and 99.4% at 500 nm wavelength. The refractive index and thickness of the thin film were n = 1.29 and d = 105 nm. Fluoro alkyl silane (FAS) was used for hydrophobic treatment on the surface of the anti-reflection thin film. The contact angle was increased from $13.2^{\circ}$ to $113.7^{\circ}$ after hydrophobic treatment.