• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.246-247
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectric properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with.

• 한국세라믹학회지
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• 제40권3호
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• pp.279-285
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• 2003

Sol-gel 법으로 200 nm 정도의 두께를 가진 강유전성 S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$ N $b_{0.2}$ 박막을 Pt/Ti $O_2$/ $SiO_2$/Si 기판 위에 증착하였다. 본 실험에서는 Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ 그리고, Nb(O $C_2$ $H_{5}$)$_{5}$를 출발 물질로 사용하였으며 2-methoxyethanol을 용매로 사용하였다. UV 노광과 급속열처리가 SBTN 박막의 구조와 전기적 특성에 어떤 영향을 주는 가를 연구하였다. UV 노광과 급속열처리를 한 후에 $650^{\circ}C$ 열처리한 SBTN 박막의 3V와 5V 인가 전압하에서의 잔류분극 값은 각각 8.49와 11.94 $\mu$C/$ extrm{cm}^2$이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.161-161
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• 2013

Two-dimensional electron gas (2DEG) has been investigated at the heterointerface between two insulating dielectric perovskite oxides, $LaAlO_3$ (LAO)/$SrTiO_3$ (STO). Properties of the 2DEG have attracted an enormous interest in condensed matter physics due to multifunctional properties such as the coexistence of ferromagnetism and superconductivity, as well as the high electron mobility. Here, we have grown $Ta_2O_5$ thin films using pulsed laser deposition on $SrTiO_3$ substrate to investigate the electric properties of the $Ta_2O_5$/STO heterointerface. Our research reveal that the non-polar $Ta_2O_5$/$TiO_2$ heterointerface favors the formation of 2DEG similar to that at the LAO/STO heterointerface. The metallic behavior was found in this heterointerface with the current about $10{\sim}100{\mu}A$ at 5 V by using conventional I-V measurements, when the $Ta_20_5$ film thickness reaches over critical thickness, $d_c{\simeq}2uc$. The finding that electrons was localized at $Ta_2O_5$/STO heterointerface have attracted to be strong and new candidate for nanoscale oxide device applications.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.120-121
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• 2004

YBaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The growth temperature to obtain the thick films was decreased by around 150$^{\circ}C$ due to plasma enhancement. The zero resistivity temperatures for films grown at 590$^{\circ}C$ and 620$^{\circ}C$ were 55 and 80 K, respectively.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.385-389
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• 2000

Residual stresses in epitaxial films were measured by X-ray diffraction method. Lattice strains of the (hkl) planes measured along particular Ψ-angles were converted to the in-plane stress according to the equation of stress-strain tensor conversion. Residual tensile stresses were observed in epitaxial PbTiO$_3$ films deposited on (100) SrTiO$_3$ substrate. Tensile stresses approximately 0.9 GPa were measured in Pb-rich films, while it increased to approximately 2.0 GPa with the decreasing of Pb content in the case of Pb-poor films, which ascribed to the formation of lead and oxygen vacancies (expressed as x in Pb$_1-x$TiO$_3-x$).

• 반도체디스플레이기술학회지
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• 제8권2호
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• pp.11-14
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various $Ar/O_2$ ratio. We investigated the effect of deposition condition(specially $Ar/O_2$ ratio) on the structural properties of SBN thin film. As $Ar/O_2$ ratio was increased, the peaks in the XRD pattern became more sharp. Also, the peaks(008)(115)(220) in 80/20 of $Ar/O_2$ ratio were suddenly appeared. The optimum of the rougness showed about 4.33 nm in 70/30 of $Ar/O_2$ ratio. The crystallinity of SBN thin films were increased with the increase of $Ar/O_2$ ratio. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70/30 of $Ar/O_2$ ratio. The capacitance of SBN thin films were increased with the increase of $Ar/O_2$ ratio.

• 한국초전도ㆍ저온공학회논문지
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• 제6권3호
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• pp.16-20
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• 2004

YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.132-132
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• 1999

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.160-160
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• 1999

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.115.1-115
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• 2003