• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.240-243
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• 1999

(Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$thin films were deposited on Pt-coated TiO$_2$/SiO$_2$/Si wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrode. C-F and C-V measurements show that SCT thin films annnealed at 600$^{\circ}C$ have a larger capacitance than SCT thin films deposited at 400$^{\circ}C$ , and there is nearly no difference between top electrodes. I-V measurement show that Pt top electrode have a good leakage current density of < 10nA/$\textrm{cm}^2$,. making them suitable for DRAM application.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.242-247
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• 2000

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ thin films were deposited by RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ substrate using a PNZST target with excess PbO of 10 mole%. The thin films deposited at substrate temperature of $500^{\circ}C$, and at RF power of 80W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at $650^{\circ}C$ for 10 seconds in air exhibited the good structures and electrical properties. The fabricated PNZST capacitor had a remanent polarization value of about $20\;{\mu}C/cm^2$ and coercive field of about 50 kV/cm. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.43-46
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• 2000

In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$TiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Structure and electrical characteristics of specimen was analyzed by Fractal Process. Thickness of BST ceramics thin films are about 2800[$\AA$]. Dielectric constant and loss of thin films was little decreased at 1[kHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the relation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1786-1790
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• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.05a
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• pp.53-54
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.64-65
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• 2010

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.158.1-158.1
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• 2008

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.244-248
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• 2013

The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.67-71
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• 2006

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1084-1087
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• 2001

The (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 100[$^{\circ}C$]∼500[$^{\circ}C$]. Also, the crystallinity of SCT thin films are obtained at the substrate temperature above 400[$^{\circ}C$]. SCT thin films had (111) preferred orientation. The dielectric constant changes almost linearly in temperature ranges of-80∼+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.1. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].