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Electrical Properties of Pt/SCT/Pt Thin Film Structure  

Kim, Jin-Sa (광운대학교 전기공학과)
Shin, Cheol-Gi (부천대학)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.56, no.10, 2007 , pp. 1786-1790 More about this Journal
Abstract
The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.
Keywords
Thin Film; Deposition Temperature; Leakage Current;
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Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 0
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