• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.74-84
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• 2022

As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.267-272
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• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.200-204
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• 2010

Surface properties are important for determining the functions and uses of materials. So modification of materials with polymer thin films has emerged as an important method to control the physical and chemical properties of the surface layer. We report a simple and effective method to photochemically attach thin polymeric layers to solid surface without chemical derivatization of the substrate and/or the polymer. The system is based on a photoreactive poly(4-vinylpyridine) (P4VP) thin film which is formed on the $SiO_{2}$ surface via spin coating. This substrate is then covered with another polymer film that is reacted with the benzyl radical moieties by UV irradiation. As a result of photochemical reaction, a thin layer of the later polymer is covalently bound to the surface of P4VP. Unbounded polymer is removed by sonication. The thickness of the attached film is a function of the irradiation time and the molecular weight of the polymer. Spatially defined polymer thin films can be fabricated by way of photolithography.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.238-247
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• 2021

PEO (plasma electrolytic oxidation) was applied to modify the surface of AZ31 magnesium alloy in this study. The mixed solution of sodium hydroxide (NaOH) and sodium silicate (Na₂SiO₃) was used as the electrolyte, and 0 - 0.05 g/L of Ca-GP (Glycerol Phosphate Calcium salt) was added in the electrolyte as an additive. PEO treatment was conducted at a current density of 30mA/cm² for 5 minutes using a DC power supply. The surface properties were identified by SEM, XRD and surface roughness analyses, and the corrosion resistance was evaluated by potentiodynamic polarization and immersion tests. In addition, the biocompatibility was evaluated by immersion test in SBF solution. As the concentration of Ca-GP was increased, the surface morphology was denser and more uniform, and the amount of Ca and the thickness of oxide layer increased. Only Mg peak was observed in XRD analysis due to very thin oxide layer. The corrosion resistance of PEO-treated samples increased with the concentration of Ca-GP in comparision with the untreated sample. In particular, the highest corrosion resistance was identified at the group of 0.04g Ca-GP through potentiodynamic polarization and immersion tests in saline solution (0.9 wt.%NaCl). During the immersion in saline solution, pH rapidly increased at the beginning of immersion period due to rapid corrosion, and then increase rate of pH decreased. However, the pH value in the SBF temporarily increased from 7.4 to 8.5 during the day, then decreased due to the inhibition of corrosion with HA(hydroxyapatite) formation.

• The Journal of Engineering Geology
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• v.26 no.1
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• pp.1-13
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• 2016

Groundwater flow paths and groundwater ages at a radioactive waste repository located in a coastal area of South Korea were evaluated using the hydrochemical and hydrogeological characteristics of groundwater, surface water, rain water, and seawater, as well as by numerical modeling. The average groundwater travel time in the top layer of the model, evaluated by numerical modeling and groundwater age (34 years), approximately corresponds to the groundwater age obtained by chlorofluorocarbon (CFC)-12 analysis (26-34 years). The data suggest that the groundwater in wells in the study area originated up-gradient at distances of 140-230 m. Results of CFC analyses, along with seasonal variations in the δ¹⁸O and δD values of groundwater and the relationships between ²²²Rn concentrations and δ¹⁸O values and between ²²²Rn concentrations and δD values, indicate that groundwater recharge occurs in the summer rainy season and discharge occurs in the winter dry season. Additionally, a linear relationship between dissolved SiO₂ concentrations and groundwater ages indicates that natural mineralization is affected by the dilution of groundwater recharge in the rainy summer season.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.47-52
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• 2008

This investigation was performed in order to study the properties of deposition and layers by Silicon Dioxide, SiO2, as dielectric onto Via and Trench which have high Aspect Ratio (AR). Thus, in order to confirm these properties, three types of CVD, which were PECVD, PETEOS, and ALD, were selected. On the experiment each of the property sections was estimated that step overage of PECVD: <30%, PETEOS: 45%, ALD: 75% and the RSM of PECVD: 27.8 nm, PETEOS: 2.1 nm, ALD: <2.0 nm. As a result of this experiment for the property of electric film, ALD was valuated to be the most favorable outcome. However, ALD was valuated to have the least quality for the deposition rate. ALD deposition rate, $10\;\AA/min$ by $1\;\AA$/1cycle, was prominently lower than PETEOS, which had the deposition rate of $5000\;\AA$/min. Since electric film requires at least $1000\;\AA$ thicknesses, ALD was not suitable for the deposition rate. which is the most important component in a practical use. Therefore, in this particular study, PETEOS was evaluated to be the most suitable recipe.