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Abnormal Detection in 3D-NAND Dielectrics Deposition Equipment Using Photo Diagnostic Sensor  

Kang, Dae Won (Department of Industrial and Management Engineering, Myongji University)
Baek, Jae Keun (Department of Industrial and Management Engineering, Myongji University)
Hong, Sang Jeen (Department of Electronics Engineering, Myongji University)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.2, 2022 , pp. 74-84 More about this Journal
Abstract
As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.
Keywords
3D-NAND; Optical Emission Spectroscopy; Plasma; $SiO_2$; Monitoring;
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