• Korean Journal of Mineralogy and Petrology
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• v.33 no.3
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• pp.251-258
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• 2020

Single crystal of fully dehydrated and partially Ca²⁺-exchanged zeolites A (|Ca₄Na₄|[Si₁₂Al₁₂O₄₈]-LTA) was brought into contact with Se in fine pyrex capillary at 523 K for 5 days. Crystal structure of Se-sorbed |Ca₄Na₄|[Si₁₂Al₁₂O₄₈]-LTA has been determined by single-crystal X-ray diffraction techniques at 294 K in the cubic space group $Pm{\bar{3}}m$ (a = 12.2787(13) Å). The crystal structure of yellow |Ca₄Na₄Se₄|[Si₁₂Al₁₂O₄₈]-LTA has been refined to the final error indices of R₁/wR₂ = 0.0960/0.3483 with 327 reflections for which F_o > 4s(F_o). In this structure, 4 Na⁺ and 4 Ca²⁺ ions fill every 6-ring site: These ions are all found at three crystallographic positions, on 3-fold axes equipoints of opposite 6-rings. Selenium atoms are found at three crystallographically distinct positions: 2 Se atoms per unit cell at Se(1) are located opposite 6-rings in the sodalite cavity (Se(1)-Na(1) = 2.53(5) Å) and 1 at Se(2) opposite 4-rings (Se(2)-O(1) = 2.76(10) Å) and 1 at Se(3) opposite 6-rings in the large cavity (Se(3)-Na(1) = 2.48(5) Å). Two molecular of Se₂ (Se(1)-Se(1) = 2.37(7) or 2.90(8) Å and Se(2)-Se(3) = 2.91(5) ) Å) are found in all sodalite cavity and large cavity. Other clusters such as Se₄ and Se₈ could be existed in large cavity. The inter-selenium distances turned out to be longer that of gases Se₂ molecule.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.20-20
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• 2010

The effect of excimer laser annealing on the structural and dielectric behaviors of $PbZr_{0.52}Ti_{0.48}O_3$ (PZT) thin films has been investigated. The amorphous PZT thin films were prepared on Pt/Ti/$SiO_2$/Si substrates by a sol-gel method. The PZT precursor was prepared from lead acetate, zirconium acetylacetonate, and titanium isopropoxide. The starting materials were dissolved in n-propanol and 1,3-propanediol. After, the amorphous PZT thin films were laser-annealed (using KrF excimer laser) as a function of the laser energy density and the number of laser pulse. Structural properties of PZT thin films are characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric characterization was done on a RT66A test system and a Agilent 4294A impedance analyzer. The PZT thin films show that excimer laser irradiation drastically improved the crystallization and dielectric properties of the PZT thin films, depending on the energy density and the pulse number.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3696-3701
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• 2011

The single-crystal structure of partially dehydrated partially $Mg^{2+}$-exchanged zeolite Y, ${\mid}Mg{30.5}Na_{14}(H_2O)_{2.5}{\mid}$ [$Si_{117}Al_{75}O_{384}$]-FAU per unit cell, ${\alpha}$ = 25.5060(1) ${\AA}$, dehydrated at 723 K and $1{\times}10^{-4}$ Pa, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd$\bar{3}$ m at 100(1) K. The structure was refined using all intensities to the final error indices (using only the 561 reflections with $F_{\circ}$ > $4{\sigma}(F_{\circ})$) $R_1$ = 0.0377 (Based on F) and $R_2$ = 0.1032 (Based on $F^2$). About 30.5 $Mg^{2+}$ ions per unit cell are found at four different crystallographic sites. The 14 $Mg^{2+}$ ions occupy at site I at the center of double 6-ring (Mg-O = 2.231(3) ${\AA}$, O-Mg-O = $89.15(11)^{\circ}$ and $90.85(11)^{\circ}$). Four $Mg^{2+}$ ions are found at site I' in the sodalite cavity; the $Mg^{2+}$ ions are recessed 1.22 ${\AA}$ into the sodalite cavity from their 3-oxygen plane (Mg-O = 2.20(3) ${\AA}$ and O-Mg-O = $92.3(14)^{\circ}$). Site II' positions (opposite single 6-rings in the sodalite cage) are occupied by 2.5 $Mg^{2+}$ ions, each coordinated to an $H_2O$ molecule (Mg-O = 2.187(20) ${\AA}$ and O-Mg-O = $114.2(16)^{\circ}$). The 10 $Mg^{2+}$ ions are nearly three-quarters filled at site II in the supercage, being recessed 0.12 ${\AA}$ into the supercage (Mg-O = 2.123(4) A and O-Mg-O = $119.70(19)^{\circ}$). About 14 $Na^+$ ions per unit cell are found at one crystallographic site; the $Na^+$ ions are located at site II in the supercage (Na-O = 2.234(7) ${\AA}$ and O-Mg-O = $110.5(4)^{\circ}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.920-923
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• 2000

All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.455-459
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• 2016

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Journal of the Korean Applied Science and Technology
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• v.22 no.3
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• pp.204-211
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• 2005

The structure of nitrogen adsorption complex of fully dehydrated $Cd^{2+}$ ion exchanged zeolite-X, $|Cd_{46}(N)_{18}|[Si_{100}Al_{92}O_{384}]$, was determined in the cubic space group $Fd\overline{3}$ at 21(1) $^{\circ}C$ [a = 24.863(4) ] by single crystal X-ray diffraction analysis. The crystal was prepared by ion exchange in a flowing steam of 0.05 M aqueous solution $Cd(NO_3)_2$ : $Cd(O_2CCH_3)_2$ = 1:1 for five days, followed by dehydration at $500^{\circ}C$ and $2{\times}10^{-6}$ Tor. for two days, and exposured to 100 Tor. zeolitically dry nitrogen gas at 21(1) $^{\circ}C$. The structure was determined in atmosphere, and was refined within $F_0$ > $4{\sigma}(F_0)$ using reflection for which the final error can appear in indices $R_1$ = 0.097 and $wR_2$ = 0.150. In this structure, $Cd^{2+}$ ions occupied four crystallographic sites. Nine $Cd^{2+}$ ions filled the octahedral site I at the centers of hexagonal prisms (Cd-O = 2.452(16) ${\AA}$). Eight $Cd^{2+}$ ions filled site I' (Cd-O = 2.324(19) ${\AA}$). The remaining 29 $Cd^{2+}$ ions are found at two nonequivalent sites II (in the supercages) with occupancy of 11 and 18 ions. Each of these $Cd^{2+}$ ions coordinated to three framework oxygens, either at 2.159(15) or 2.147(14) ${\AA}$, respectively. Eighteen nitrogen molecules were adsorbed per unit cell and three per supercage.

• Resources Recycling
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• v.23 no.5
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• pp.55-61
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• 2014

Froth flotation was performed to study the effect of phosphate addition in the experiment to remove As from tailing of Sang-dong Mine. The experiment without Trisodium phosphate (T.S.P) showed that the removal rate of As was 88.7% and weight-ratio of floating material was 2.52%. By contrast, the experiment with T.S.P showed that the removal rate of As was 92.74% and weight-ratio of floating material was 2.26%. In flotation without T.S.P, the average particle size of float material was 19.34 um and the amount less than 10um was 40.2%. On the other hand, in flotation with T.S.P the average particle size of float material was 176.8 um and the amount less than 10um was 6.5%. The result of X.R.F analysis presented that contents of $SiO_2$ was 42.74% in float material of the experiment without T.S.P. In contrast, contents of $SiO_2$ was 29.56% in float material of the experiment with T.S.P.

• Journal of Magnetics
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• v.20 no.3
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• pp.211-214
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• 2015

$Cr_2O_3$ nanoparticles were prepared via one-step reactive laser ablation of Cr in oxygen. The metastable $CrO_2$ phase was obtained through the subsequent oxidation of $Cr_2O_3$ nanoparticles under $O_2$ with gas pressures of up to 40 MPa. The as-prepared $Cr_2O_3$ nanoparticles are spherical or rectangular in shape with sizes ranging from 20 nm to 50 nm. High oxygen pressure annealing is effective in producing meta-stable $CrO_2$ from as-dried $Cr_2O_3$ nanoparticles, and the $Cr_2O_3$ nanoparticles exhibit a weak ferromagnetic behavior with an exchange bias of up to 11 mT that can be ascribed to the interfacial exchange coupling between uncompensated surface spins and the antiferromagnetic core. The $Cr_2O_3/CrO_2$ nanoparticles exhibit an enhanced saturation magnetization and a reduced exchange bias with an increasing faction of $CrO_2$ due to the elimination of uncompensated surface spins over the $Cr_2O_3$ nanoparticles when exposed to a high pressure of $O_2$ and/or possible phase segregation that results in a smaller grain size for both $Cr_2O_3$ and $CrO_2$.