• Korean Journal of Materials Research
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• v.3 no.5
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• pp.443-450
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• 1993

Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.923-929
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• 1995

Four crystal structures of M3-A (M3Na9-xHx-A, M=Rb or K and x=1 or 0), Rb3Na8H-A(a=12.228(1) Å and R1=0.046), Rb3Na9-A (a=12.258(3) Å and R1=0.058), K3Na8H-A (a=12.257(3) Å and R1=0.048) and K3Na9-A (a=12.257(3) Å and R1=0.052), have been determined by single crystal x-ray diffraction technique in the cubic space group Pm3^m at 21 ℃. In all structures, each unit cell contained three M+ ions all located at one crystallographically distinct position on 8-rings. Rb+ ions are 3.12 and 3.21 Å away respectively from O(1) and O(2) oxygens, about 0.40 Å away from the centers of the 8-rings, and K+ ions are 2.87 and 2.81 Å apart from the corresponding oxygens. These distances are the shortest ones among those previously found for the corresoponding ones. Eight 6-rings per unit cell are occupied by eight Na+ ions, each with a distance of 2.31 Å to three O(3) oxygens. The twelfth cation per unit cell is found as Na+ opposite 4-ring in the large cavities of M3Na9-A and assumed to be H+ for M3Na8H-A. With these noble non-framework cationic arrangements, larger M+ ions preferably on all larger 8-rings and the compact Na+ ions on all 6-rings, the bond angles in the 8-rings of M3-A, 145.1 and 161.0 respectively for (Si,Al)-O(1)-(Si,Al) and (Si,Al)-O(2)-(Si,Al), turned out to be remarkably stable and smaller, by more than 12 to 17°, than the corresponding angles found in the crystal structures of zeolites A with high concentration of M+ ions. It is to achieve these remarkably relaxed 8-rings, the main windows for the passage of gas molecules, with simultaneously maximized cavity volumes that M3-A have been selected as one of the efficient zeolite A systems for gas encapsulation.

• Journal of Magnetics
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• v.14 no.4
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• pp.144-146
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• 2009

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]$_N$ multilayers were prepared at room temperature to form a $L1_0$-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at $300{^{\circ}C}$ for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature $L1_0$- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

• Journal of Industrial Technology
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• v.19
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Journal of the Optical Society of Korea
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• v.7 no.4
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• pp.230-233
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• 2003

This study describes the conceptual design of a soft x-ray microscope system based on a laserbased source for biomedical application with high resolution (${\leq}$50nm). The laboratory scale soft x-ray microscope consists of high power laser plasma x-ray source and grazing incidence mirrors with high reflectivity. The laser plasma source used for developing this system employs Q-switched Nd-YAG pulsed laser. The laser beam is focused on a tantalum (Ta) target. The Wolter type I mirror was used as condenser optics for sample illumination and as objective mirror for focusing on a detector. The fabrication of the Wolter type I mirror was direct internal cutting using ultraprecision DTM. A hydrated biological specimen was put between the two silicon wafers, the center of which was $Si_3N_4$ windows of 100㎚ thickness. The main issues in the future development work are to make a stable, reliable and reproducible x-ray microscope system.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.223.2-223.2
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• 2013

비정질 실리콘은 태양전지, 트랜지스터, 이미지 센서 등 다양한 분야에서 응용되고 있으며 새로운 박막 소자 개발을 위한 소재로서 많은 연구가 진행되고 있다. 하지만 소자개발에 있어 공정상에서 발생하는 비정질 실리콘 박막의 높은 응력(stress)은 소자의 특성을 떨어뜨리는 문제점을 갖는다. 따라서 우수한 특성의 소자 개발을 위해서는 보다 낮은 응력을 갖는 비정질 실리콘 박막 증착 및 공정 조건에 따른 응력 조절이 필요하다. 저응력의 비정질 실리콘 박막 증착은 보다 낮은 반응온도에서 증착속도를 최소로 하여 성장되어야 하는데 이는 플라즈마기상증착(Plasma enhanced chemical vapor deposition, PECVD) 시스템에 의해 가능하다. 따라서 본 연구에서는 PECVD 시스템을 사용하여 비정질 실리콘 박막을 증착하였고 그 특성을 분석하였다. 이 때 증착 온도, rf 파워, 공정 압력은 실험결과로부터 얻어진 낮은 박막 증착속도 하에서 안정적으로 증착이 가능한 조건으로 일정하게 유지하여 실험하였다. 공정 가스는 SiH4/He/N2의 혼합가스를 사용하였고 응력 조절을 위해 SiH4/He 가스비를 일정한 비율로 변화하여 비정질 실리콘 박막을 증착하였다. 증착된 박막의 두께 및 표면 특성은 field emission scanning electron microscopy 및 atomic force microscopy를 이용하여 분석하였고, energy dispersive X-ray 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 stress measurement system을 이용하여 박막의 응력을 측정하였고 X-ray diffraction 측정 및 ellipsometry 측정으로부터 증착된 박막의 결정성, 굴절률 및 oiptical bandgap을 분석하였다.

• Journal of Korean Academy of Dental Administration
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• v.11 no.1
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• pp.38-46
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• 2023

Composite resins, commonly used in clinical practice, have been developed to improve aesthetics to obtain smooth surfaces. Although the restored composite resin has a smooth surface, it gradually becomes rough over time. Therefore, this study measured glossiness to evaluate the surface of various composite resins and attempted to evaluate the maintenance of glossiness of composite resins by observing surfaces that change to roughness. Specimens were produced using resin used in clinical practice: Gradia direct anterior (GA), Tetric N-Ceram (TN), Ceram.X Sphere TEC one (CX), Filtek Z350XT (FT), Estelite sigma quick (ES). After creating a smooth surface with slide glass, five locations were randomly selected to measure surface gloss, and the average was the representative value of the specimen. Roughness was applied to the specimen under water pouring at the same speed and pressure using SiC paper #2400, 1200, and 400. The gloss unit of different SiC papers was measured. To evaluate the gloss unit and gloss retention between composite resins, one-way analysis of variance and Tukey multiple comparisons test were used. As a result of the study, there was a difference in gloss unit of specimens produced under the same conditions. Although the degree differed depending on the composite resin, there was also a difference in gloss retention. Based on the findings, composite resins show differences in gloss due to their different characteristics. Ceram.X Sphere TEC one (CX) showing the lowest gloss retention and Estelite sigma quick (ES) showing the highest.