• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.182-185
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• 2002

자기정렬구조의 실리콘-게르마늄 이종접합 트랜지스터에서 $f_{max}$를 높이기 위한 방안으로 베이스의 저항 값을 감소시키고자 외부 베이스에 실리콘 및 실리콘-게르마늄 박막을 저온에서 선택적으로 성장할 수 있는 방법을 연구하였다. RPCVD를 이용하여 $SiH_{2}Cl_{2}$과 $GeH_{4}$를 소스 가스로 하고 HCI을 첨가하여 선택성을 향상시킴으로써 $675\sim725^{\circ}C$의 저온에서도 실리콘 및 실리콘-게르마늄의 선택적 에피성장이 가능하였다. 고온 공정에 주로 이용되는 $SiH_{2}Cl_{2}$를 이용한 실리콘 증착은 $675^{\circ}C$에서 열분해가 잘 이루어지지 않고 HCl의 첨가에 의한 식각반응이 동시에 진행되어 실리콘 기판에서도 증착이 진행되지 않으나 $700^{\circ}C$ 이상에서는 HCI을 첨가한 경우에 한해서 선택성이 유지되면서 실리콘의 성장이 이루어졌다, 반면 실리콘-게르마늄막은 실리콘에 비해 열분해 온도가 낮고 GeO를 형성하여 잠입시간을 지연하는 효과가 있는 게르마늄의 특성으로 인해 선택성이나 증착속도 모두에서 유리하였으나 실리사이드 공정시에 표면으로 게르마늄이 석출되는 현상 등의 저항성분이 크게 작용하여 실리콘-게르마늄막 만으로는 외부 베이스에의 적용은 적절하지 않았다. 그러나 실리콘막을 실리콘-게르마늄막 위에 Cap 층으로 증착하거나 실리콘막 만으로 외부 베이스에 선택적으로 증착하여 베이스의 저항을 70% 가량 감소시킬 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Polymer(Korea)
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• v.32 no.3
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• pp.239-245
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• 2008

Block copolymers of the general formula $[(-CO-R'-CO-HN-Ar-NH-CO-R'-CO)_xNH(CH_2)_3-(Me_2SiO)_y(CH_2)_3NH_2]_n$, [n=18.00 to 1175.0] where $R'=CH_2CH(CH_2GeCl_3)$;$CH_2CHGeCl_3CH_2$; and $Ar=-C_6H_4$;$-(o.CH_3C_6H_4)_2$;$-o.CH_3OC_6H_4)_2$;$-(o.CH_3C_6H_4)$ were prepared by a polycondensation reaction of polyamide containing a pendant trichlorogermyl group and terminal acid chloride $Cl(-CO-R'-CO-NH-Ar-NH-CO-R'-CO-)_xCl$ with aminopropyl-terminated polydimethylsiloxane $H_2N(CH_2)_3(Me_2SiO)_y-(CH_2)_3NH_2]$, (PDMS). These polymers were characterized by elemental analysis, $T_g$, FT-IR, $^1H$-NMR, solid state $^{13}C$-NMR, and molecular weight determination. The thermal stability of these copolymers was examined using thermal analysis techniques, such as TGA and DSC. Their molecular weights as determined by laser light scattering technique ranged $5.13{\times}10^5$ to $331{\times}10^5\;g/mol$. These polymers display their $T_g$ in the range of 337 to $393^{\circ}C$ with an average decomposition temperature at $582^{\circ}C$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.115-121
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• 2002

In this research we have investigated the characteristics of ultra thin $HfO_2 /SiON$stack structure films using several analytical techniques. SiON layer was thermally grown on standard SCI cleaned silicon wafer at $825^{\circ}C$ for 12sec under $N_2$O ambient. $HfO_2 /SiON$$_4$/$H_2O$ as precursors and $N_2$as a carrier/purge gas. Solid HfCl$_4$was volatilized in a canister kept at $200^{\circ}C$ and carried into the reaction chamber with pure $N_2$carrier gas. $H_2O$ canister was kept at $12^{\circ}C$ and carrier gas was not used. The films were grown on 8-inch (100) p-type Silicon wafer at the $300^{\circ}C$ temperature after standard SCI cleaning, Spectroscopic ellipsometer and TEM were used to investigate the initial growth mechanism, microstructure and thickness. The electrical properties of the film were measured and compared with the physical/chemical properties. The effects of heat treatment was discussed.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.583-588
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• 2010

Esterification of free fatty acid with methanol to biodiesel was investigated in a batch reactor using various solid acid catalysts, such as polymer cation-exchanged resins with sulfuric acid functional group(Amberlyst-15, Dowex 50Wx8), acidic ionic liquids (ILs)-modified silica gels respectively with $-SO_3H$ and $-SO_2Cl$ functional group ($SiO_2-[ASBI][HSO_4]$, $SiO_2-[ASCBI][HSO_4]$) and grafted silica gels respectively with $-SO_3H$ and $-SO_2Cl$ functional group ($SiO_2-R-SO_3H$, $SiO_2-R-SO_2Cl$). The effects of reaction time, temperature, reactant concentration(molar ratio of methanol to oleic acid), and catalyst amount were studied. Allylimidazolium-based ILs on modified silica gels were superior to other tested solid acid catalysts. Especially, the performance of $SiO_2-[ASBI][HSO_4]$ (immobilized by grafting of 3-allyl-1-(4-sulfobutyl)imidazolium hydrogen sulfate on silica gel) was better than that of a widely known Amberlyst-15 catalyst at the same reaction conditions. A high conversion yield of 96% was achieved in the esterification reaction of the simulated cooking oil at 353 K for 2 h. The high catalytic activity of $SiO_2-[ASBI][HSO_4]$ was attributed to the presence of strong Brønsted acid sites from the immobilized functional groups. The catalyst was recovered and the biodiesel product was separated by simple processes such as decantation and filtration.

• Journal of the Korean Chemical Society
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• v.44 no.1
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• pp.60-67
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• 2000

The wavelength of the surface plasmon absorption depends on the dielectric matrix. $TiO_2/SiO_2$ complex oxide films doped with Au nanoclusters were prepared by sol-gel spin-coating method using $Ti(OPr^i)_4$, $Si(OEt)_4$, and $HAuCl_4{\cdot}7H_2O$. The wavelength of the maximum absorption of Au nanoehrsters in the $TiO_2/SiO_2$ thin films was obtained with lineality from 540 nm to 615 nm depending on the molar ratio of $TiO_2$. The particle sizes and structures of these nanoclusters have been identified through a TEM and X-ray diffraction patterns. The dielectric constants of $TiO_2/SiO_2$ thin films were calculated from the experimental results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.101-109
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• 2002

A complex chemical equilibrium analysis was performed to study the hot-wall CVD process of the SiC/C functionally gradient materials (FGM). Thermochemical calculations of the Si-C-H-Cl system were carried out, and the effects of process variables(deposition temperature, reactor pressure, C/[Si+C] and H/[Si+C] ratios in the source gas) on the composition of deposited layers and the deposition yield were investigated. The CVD phase diagrams of the SiC/C FGM deposition were obtained, and the optimum process windows were estimated from the results.

• Economic and Environmental Geology
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• v.24 no.1
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• pp.1-8
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• 1991

North ore deposits of the Dunjeon gold mine is disseminated-stockworks deposits emplaced in Ordovician Dongjeom quartzite. Six types of fluid inclusions are recongnized in the stage I quartz. Among them polyphase inclusions(type-IV-A, B) are predominent in the lower part of stage I quartz crystals whereas liquid and gas inclusions(type I, II) are abundant in the upper part of the same quartz crystals. Liquid $CO_2$-bearing inclusions(type III-A, B)occur as pseudosecondary inclusions. Solid phases in polyphase inclusions are identified by using scanning electron microscopy combined with energy dispersive x-ray spectroscopy. The solid phases are as follows; halite, sylvite, hydrophyllite, quartz, muscovite, calcite, ankerite, K-Mg-Fe-Al-Si mineral, Ca-Fe-Si mineral, Mg-Al-Si mineral, two kinds of Fe-mineral and Cu-Fe mineral. Results of freezing and heating experiments of fluid inclusions and identification of daughter minerals in polyphase inclusions in the stage I quartz reveal that ore fluids were high saline system NaCl-KCl-$CaCl_2$-$H_2O$ in the earier stage and then evolved to rather simple system NaCl-$H_2O$ in the later stage, and temporally fluid mixing occured with system $CO_2$-$H_2O$. Homogenization temperatures and salinity of fluid inclusions in the stage I range from 290 to $454^{\circ}C$ and from 0.2 to 54.2 wt. % equivalent to NaCl.

• Journal of the korean academy of Pediatric Dentistry
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• v.27 no.2
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• pp.370-378
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• 2000

The composite restorative resins have their insufficient resistance to wear. The subsurface degradation within the restoration is considered to be associated with wear. The aim of this study was to evaluate the resistance to degradation of six commercial composite resins in an alkaline solution. The brands studied were Clearfil APX(Kuraray), Heliomolar(Vivadent), Surefil(Dentsply), TPH(Dentsply), Tetric Ceram(Vivadent), and Z100(3M). Preweighed discs of each brand were exposed 0.1N NaOH solution at $60^{\circ}C$. After 14 days they were removed, neutralized with HCL, washed with water and dried to constant mass at $60^{\circ}C$. Resistance to degradation was evaluated on the basis of the following parameters: (a) mass loss(%) - determined from pre-and post-exposure specimen weights; (b) Si loss (ppm)-obtained from ICP-AE analysis of solution exposed to specimens; and (c) degradation depth$({\mu}m)$ - measured microscopically (SEM) from polished circular sections of exposed specimens. The results were as follows: 1. The mass loss was in descending order by Z100, TC H, S, CL, TPH and in the range of $0.45\sim3.64%$ 2. The degradation layer depth was in descending order by H, Z100, S, TC, TPH, CL and in the range of $10.85\sim73.38{\mu}m$ 3. For the Si concentration, Z100 was the highest of all 4. The highly significant correlation(r=0.81, p<0.05) was observed between mass loss and degradation depth. 5. Under scanning electronmicroscopy, the degradation of connection between resin matrix and fillers was observed 2 weeks after soaking in NaOH solution.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.62 no.4
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• pp.293-303
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• 2017

To elucidate the physiological responses of rice plants to the essential mineral silicon (Si), we assessed the effects of treatments with Si, nitrogen ($NH_4NO_3$; ammonium nitrate), and calcium ($CaCl_2$; calcium chloride), independently or in combination on mineral uptake rates and levels of the hormones abscisic acid (ABA), gibberellin ($GA_1$) and jasmonic acid (JA). We found that nitrogen and calcium uptake was inhibited by Si application. However, solo application of nitrogen or calcium did not affect Si uptake. Compared to the untreated plants, the application of Si, $NH_4NO_3$ or $CaCl_2$ increased the endogenous hormone levels in treated plants. In particular, the concentrations of $GA_1$ and JA increased significantly after the application of Si or $NH_4NO_3$. The level of $GA_1$ observed after a treatment (solo or combine) with Si, and $NH_4NO_3$ was higher than that of the control. By contrast, independent application of $CaCl_2$ or a combined treatment with Si and $CaCl_2$ did not alter $GA_1$ levels. The highest level of $GA_1$ was present in plants given a combination treatment of Si and $NH_4NO_3$. This effect was observed at all time points (6 h, 12 h and 24 h). Endogenous JA contents were higher in all treatments than the control. In particular, a combination treatment with Si and $NH_4NO_3$ significantly increased the JA levels in plants compared to other treatments at all time points. A small increase in JA levels was observed after 6 h in plants given the $CaCl_2$ treatment. However, JA levels did not differ between plants given a $CaCl_2$ treatment and controls after 12 h or 24 h of exposure. We conclude that treatment with $CaCl_2$ alone does not affect endogenous JA levels in the short term. Endogenous ABA contents did not show any differences among the various treatments.