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Thermodynamic analysis of the deposition process of SiC/C functionally gradient materials by CVD technique  

박진호 (영남대학교 응용화학공학부)
이준호 (영남대학교 응용화학공학부)
신희섭 (영남대학교 응용화학공학부)
김유택 (경남대학교 첨단산업공학부)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.12, no.2, 2002 , pp. 101-109 More about this Journal
Abstract
A complex chemical equilibrium analysis was performed to study the hot-wall CVD process of the SiC/C functionally gradient materials (FGM). Thermochemical calculations of the Si-C-H-Cl system were carried out, and the effects of process variables(deposition temperature, reactor pressure, C/[Si+C] and H/[Si+C] ratios in the source gas) on the composition of deposited layers and the deposition yield were investigated. The CVD phase diagrams of the SiC/C FGM deposition were obtained, and the optimum process windows were estimated from the results.
Keywords
Chemical equilibrium analysis; Chemical Vapor Deposition (CVB); Silicon Carbide (SiC) Functionally Gradient Materials (FGM); Phase diagram;
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Times Cited By KSCI : 2  (Citation Analysis)
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