• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.101-104
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• 2008

The electrical properties and microstructure of nitrogen-doped poly 3C-SiC films were studied according to different thickness. Poly 3C-SiC films were deposited by LPCVD(low pressure chemical vapor deposition) at $900^{\circ}C$ and 4 Torr using $SiH_2Cl_2$ (100 %, 35 sccm) and $C_2H_2$ (5 % in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5 % in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the 3C-SiC films with $1,530{\AA}$ of thickness was $32.7{\Omega}-cm$ and decreased to $0.0129{\Omega}-cm$ at $16,963{\AA}$. In XRD spectra, 3C-SiC is so highly oriented along the (1 1 1) plane at $2{\theta}=35.7^{\circ}$ that other peaks corresponding to SiC orientations are not presented. The measurement of resistance variations according to different thickness were carried out in the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of resistance variation decreases with increasing the films thickness, the linearity of resistance variation improved.

• Macromolecular Research
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• v.17 no.5
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• pp.346-351
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• 2009

$TiCl(O-i-Pr)_3/SiO_2$ and $Ti(O-i-Pr)_4/SiO_2$ were prepared by immobilizing chlorotitanium (IV) isopropoxide ($TiCl(O-i-Pr)_3$) and titanium (IV) isopropoxide ($Ti(O-i-Pr)_4$), to pretreated silica. The effect of the polymerization reaction conditions on the catalytic activity and characteristics of the resulting PLA were investigated. The catalytic conversion, molecular weight and polydispersity index (PDI) of the PLA produced on the titanium alkoxide supported catalysts increased proportionally with the reaction temperature. When the PLA was synthesized in bulk polymerization, the PLA produced with the supported catalysts had higher molecular weight than those with homogeneous catalysts. The melting temperature of the polymer produced with silica supported alkoxide catalysts was approximately $170-180^{\circ}C$.

• Microbiology and Biotechnology Letters
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• v.20 no.6
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• pp.699-703
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• 1992

An oriental drug, named NP-S, traditionally used as a therapeutic agent for hepatitis B was characterized by separating into volatile and non-volatile fractions. The volatile fraction contained ammonia as determined by ammonia kit and eight peaks when it was analyzed by gas chromatography that are not identified yet. The elemental analysis showed that the non-volatile fraction contained 15.5% carbon, 4.8% hydrogen, 11% nitrogen, and 10% sulfur along with a few trace elements such as Cl, Si, Mg and Zn. NP-S contained 6.7% peptide, 0.3% free amino acids such as Lys, Pro, Arg, lie, Tyr, Phe, His, Thr and Ser and 0.1% inorganic phosphate. The drug showed antimicrobial activity against Salmonella typhimurium, StaPhylococcus aureus and Candida albieans and also had antioxidant activity when thiobarbituric acid reacting substances(TBARS) method was applied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Journal of Surface Science and Engineering
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• v.47 no.4
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• pp.147-154
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• 2014

Formation behavior of PEO (Plasma Electrolytic Oxidation) films on AZ31 Mg alloy was studied in aqueous solutions containing various concentrations of hydroxide ion ($OH^-$) and silicate ion ($SiO_3{^{2-}}$) by voltage-time curves, and corrosion resistance of the PEO film-covered specimen was investigated by immersion test in 0.5 M NaCl solution. From the analyses of the voltage-time curves, it is suggested that two different types of anions are essentially needed for the formation of PEO films on AZ31 Mg alloy: film formation agent and local film breakdown agent. $SiO_3{^{2-}}$ ion acts only as a film formation agent but $OH^-$ ion acts not only as a film formation agent but also film breakdown agent. The PEO films prepared on AZ31 Mg alloy in alkaline silicate solution showed very good corrosion resistance without any pitting or filiform corrosions up to 480 h of immersion in 0.5 M NaCl.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.10 no.1
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• pp.27-36
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• 2012

Metal chloride waste is generated as a main waste streams in a series of electrolytic processes of a pyrochemical process. Different from carbonate or nitrate salt, metal chloride is not decomposed into oxide and chlorine but it is just vaporized. Also, it has low compatibility with conventional silicate glasses. Our research group adapted the dechlorination approach for the immobilization of waste salt. In this study, the composition of SAP ($SiO_2-Al_2O_3-P_2O_5$) was adjusted to enhance the reactivity and to simplify the solidification process as a subsequent research. The addition of $Fe_2O_3$ into the basic SAP decreased the SAP/Salt ratio in weight from 3 for SAP 1071 to 2.25 for M-SAP( Fe=0.1). The experimental results indicated that the addition of $Fe_2O_3$ increased the reactivity of M-SAP with LiCl-KCl but the reactivity gradually decreased above Fe=0.1. Also, introducing $B_2O_3$ into M-SAP requires no glass binder for the consolidation of reaction products. U-SAP ($SiO_2-Al_2O_3-Fe_2O_3-P_2O_5-B_2O_3$) could effectively dechlorinate the LiCl-KCl waste and its reaction product could be consolidated as a monolithic form without a glass binder. The leaching test result indicated that U-SAP 1071 was more durable than other SAPs wasteform. By using U-SAP, 1 g of waste salt could generated 3~4 g of wasteform for final disposal. The final volume would be about 3~4 times lower than the glass-bonded sodalite. From these results, it could be concluded that the dechlorination approach using U-SAP would be one of prospective methods to manage the volatile waste salt.

• Journal of the Korean Chemical Society
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• v.13 no.2
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• pp.157-164
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• 1969

Aoolphane was treated with 30% Hydrochloric acid at $18^{\circ}C$ for two hows with stirring in order to obtain the insoluble form of SiO2 gel and to extract quantitatively both $Al_2O_3$as and $Fe_2O_3AlCl_3{\cdot}6H_2O Fe$ and $Cl_3{\cdot}6H_2O$ forms, respectively, at the same time. $SiO_2$ gel was filtered and to the filterate Ammonia was added to precipitate $Al(OH)_3[Fe(OH)_3 Contaminated ]$ The precipitate was separated by filteration and the filterate was recovered as the form of $NH_4Cl$. The precipitate was treated with 200g (NaOH)/l Concentration of NaOH a little excessively to the equivalent at $65~70^{\circ}C$ as $Fe(OH)_3$ formed was insoluble, it was filtered of and to the filterate containing $NaAl(OH)_4(OH_2)_2$Carbon dioxide gas was bubbled at $50^{\circ}C~90^{\circ}C$ to obtain the precipitate with excellent filterability and crystallinity. The product was certified to be Dawsonite $(NaAl(OH)_2CO_3)$ by X-Ray diffraction analysis at below $40^{\circ}C$, when $CO_2$ gas was bubbled into the relatively lower concentration of $NaAl(OH)_4(OH_2)_2$ solution, the precipitate of very fine particles was formed, which was hard to filter and with the Composition of $\alpha-Al_2O_3-H_2O$ (Boehmite).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.496-498
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• 2005

We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride ($HfCl_4$) and water as the precursors and analyzed the hafnium oxide film by transmission electron microscope and secondary ion mass spectrometer. Hafnium oxide produced by the ALD method showed very good coverage on the rough surface of poly-Si film. While deposited with 200 cycles, these hafnium oxide films revealed a relatively smooth surface and good uniformity, but the cumulative roughness produced by the incomplete reaction was apparent when the amount of deposition cycle increased to 600 cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.326-329
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• 1996

In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

• The Journal of Engineering Geology
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• v.15 no.4 s.42
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• pp.391-405
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• 2005

Chemical and isotopic analysis for stream water, shallow groundwater, intermediate groundwater and deep groundwater was carried out to grasp hydrogeochemical characteristics of groundwater in the Heunghae area, Pohang city. Water type of stream water and shallow groundwaters is typified as Ca-Cl type, intermediate groundwater is $Na-HCO_3$, and deep groundwater is prominent in Wa-Cl type. $HCO_3^-\;and\;SiO_2$ in shallow groundwater are originated from weathering of silicate minerals, whereas those of deep groundwaters are resulted from weathering of carbonate minerals. Ca and Mg ions in both shallow and deep groundwaters are resulted from weathering of calcite and dolomite. $SO_4^{2-}$ in shallow groundwater is originated mainly from pyrite oxidation. As well depth increases, pH and TDS increase, but Eh and DO decrease. Alkali metal contents(K, Na, Li) increases as well depth increases, but alkali earth metal(Mg, Ca) and hi concentrations increase as well depth decreases. Anions, halogen elements(F, Cl, Br), and $HCO_3$ contents increase as well depth increases. The average stable isotope value of the groundwater of each depth is as follows; deep groundwater: ${\delta}^{18}O=-10.1\%o,\;{\delta}D=-65.8\%_{\circ}$, intermediate groundwater: ${\delta}^{18}O=-8.9\%_{\circ},\;{\delta}D=-59.6\%_{\circ}$, shallow groungwater : ${\delta}^{18}O=-8.0\%_{\circ},\;{\delta}D=-53.6\%_{\circ}$, surface water : ${\delta}^{18}O=-7.9\%_{\circ},\;{\delta}D=-53.3\%_{\circ}$ respectively.