• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.114-119
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• 2000

Etch characteristics of SF6/CI2 electron cyclotron resonance (ECR) plasmas have been investigated. Surface reaction of gas plasma with polysilicon was also analysed using X-ray photoelectron spectroscopy (XPS). At the same time, the relationship between surface reaction and the etched profile of polysilicon was examined using XPS. The etch rate of polysilicon and oxide increases with increasing flow rate of SF6 in the SF6/CI2 gas mixture, and tis selectivity also increase also increase. It was also found that as increasing flow rate of SF6 in the SF6/CI2 gas mixture, the atomic% of chlorine detected at surface region decrease, but F and S contents increase. At the same time, when the mixing ratio of SF6 gas increases, the anisotropy of etched polysilicon is sharply decreased in the 0%~10% range of the SF6 mixing ratio, but is rarely varied in the range over 10%, in spite of the large variations in flow rates. It can be explained that the bonding of S-Si due to SiSx(x$\leq$2) compound formed on the etched surface suppress the formation of Si-Cl and 'or Si-F bonding in the silicon etching.

• 한국결정성장학회지
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• 제21권6호
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• pp.230-234
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• 2011

$CF_4$ Ar 및 $SF_6$/Ar 유도결합 플라즈마을 이용하여 ZnO 박막의 고이온밀도 플라즈마 식각을 수행하였다. $10CF_4$/5Ar, $10SF_6$/5Ar 유도결합 플라즈마에서 최고 ~1950 ${\AA}$/min과 ~1400 ${\AA}$/min의 식각 속도를 확보하였다. 대부분의 조건 하에서 식각된 ZnO 표면은 식각 전보다 더 낮은 표면조도 값들을 나타내었다. $10CF_4$/5Ar 유도결합 플라즈마에서 Ni mask는 ZnO에 대해 최고 11의 높은 식각 선택도를 나타낸 반면에 Al은 이보다 낮은 1.6~4.7 범위의 식각선택도를 나타내었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.103.2-103.2
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• 2007

• 한국결정성장학회지
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• 제14권5호
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• pp.220-225
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• 2004

Four different Fluorine-based gases ($SF_6/,NF_3, PF_5,\; and \; BF_3$) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to ~8$\mu\textrm{m}$/min were achieved with pure $SF_6$ discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order $BF_3$ < $NF_3$< $PF_5$ < $SF_6$. This is in good correlation with the average bond energies of the gases, except for $NF_3$, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated $NF_3$, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.

• 전자공학회논문지D
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• 제35D권1호
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• pp.27-33
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• 1998

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization.The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM 9Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$_{6}$ plasma treatment sulbsequent to the etching process preventas the corrosion effectively in the pressure of 300 mTorr. It is found that the cholrine atoms on the etched surface are not substituted for fluorine atoms during SF$_{6}$ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$_{6}$ treated surface and suppresses the corrsion sucessfully.fully.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.105-108
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• 1995

The inter-metal dielectric SiOF films were fabricated using remote plasma-enhanced chemical vapour deposition with addition of SF$\sub$6/ gas. SiOF bond formation in these films was recognized by a chemical bonding structural study using FT-IR. The deposition rate and the dielectric constant of a deposited films were decreased with increasing SF$\sub$6/ gas. It was observed that leakage current of SiOF film was reduced the one order compared to a film without addtion of SF$\sub$6/ gas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.43-45
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• 2002

가스차단기의 성능은 노즐재질, 접점분리 속도 차단기의 치수 그리고 마크시간 등에 좌우되며 이러한 일련의 현상을 고찰하기 위한 유동현상을 모의하기 위해서는 기본적으로 두 접점의 상대운동 및 접점 사이에서 발생하는 아크 플라즈마(arc plasma)에 의한 전도, 대류, 복사현상 뿐만 아니라 아크전류에 의한 로랜츠힘(Lorentz's force), 용삭(ablation)에 의한 화학작용 등과 같은 매우 복잡한 물리적 현상을 고려해야 한다. 본 연구에서는 차단과정 중 대전류 영역에서의 아크특성과 마크에서 방출되는 강한 복사에너지에 의해 발생하는 PTFE 증기에 의한 영향을 고려하기 위해서 상용 CFD 프로그램인 PHOENICS에 아크 모델링과 고온에서의 $SF_6$-PTFE 혼합가스의 물성치 대입을 위한 보조 프로그램을 작성하여 해석을 수행하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2005년도 추계학술발표회 및 workshop
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• pp.168-168
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• 2005