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http://dx.doi.org/10.6111/JKCGCT.2011.21.6.230

Fluorine-based inductively coupled plasma etching of ZnO film  

Park, Jong-Cheon (Department of Nano Fusion Technology, Pusan National University)
Lee, Byeong-Woo (Department of Marine Equipment Engineering, Korea Maritime University)
Kim, Byeong-Ik (Korea Institute of Ceramic Engineering and Technology (KICET))
Cho, Hyun (Department of Nanomechatronics Engineering, Pusan National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.21, no.6, 2011 , pp. 230-234 More about this Journal
Abstract
High density plasma etching of ZnO film was performed in $CF_4$/Ar and $SF_6$/Ar inductively coupled plasmas. Maximum etch rates of ~1950 ${\AA}$/min and ~1400 ${\AA}$/min were obtained for $10CF_4$/5Ar and $10SF_6$/5Ar ICP discharges, respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the $10CF_4$/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.
Keywords
ZnO film; Inductively coupled plasma etching; $CF_4$/Ar and $SF_6$/Ar; Etch rate; Surface roughness; Etch selectivity;
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