The formation of the passivation layer by the flourine layer by the fluorine treatment after Al(Cu 1%) plasma etching

Al(Cu 1%) 플라트마 식각후 fluorine 처리에 의한 passivation 막 형성

  • 김창일 (중앙대학교 전자전기공학과) ;
  • 최광호 (한서대학교 전자공학과) ;
  • 김상기 (한국전자통신연구원 반도체연구단) ;
  • 백규하 (한국전자통신연구원 반도체연구단) ;
  • 윤용선 (한국전자통신연구원 반도체연구단) ;
  • 남기수 (한국전자통신연구원 반도체연구단) ;
  • 장의구 (중앙대학교 전자전기공학과)
  • Published : 1998.01.01

Abstract

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization.The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM 9Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$_{6}$ plasma treatment sulbsequent to the etching process preventas the corrosion effectively in the pressure of 300 mTorr. It is found that the cholrine atoms on the etched surface are not substituted for fluorine atoms during SF$_{6}$ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$_{6}$ treated surface and suppresses the corrsion sucessfully.fully.

Keywords