• Korean Journal of Materials Research
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• v.19 no.2
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• pp.68-72
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• 2009

This study investigated dry etching of acrylic in capacitively coupled $SF_6$, $SF_6/O_2$ and $SF_6/CH_4$ plasma under a low vacuum pressure. The process pressure was 100 mTorr and the total gas flow rate was fixed at 10 sccm. The process variables were the RIE chuck power and the plasma gas composition. The RIE chuck power varied in the range of $25{\sim}150\;W$. $SF_6/O_2$ plasma produced higher etch rates of acrylic than pure $SF_6$ and $O_2$ at a fixed total flow rate. 5 sccm $SF_6$/5 sccm $O_2$ provided $0.11{\mu}m$/min and $1.16{\mu}m$/min at 25W and 150W RIE of chuck power, respectively. The results were nearly 2.9 times higher compared to those at pure $SF_6$ plasma etching. Additionally, mixed plasma of $SF_6/CH_4$ reduced the etch rate of acrylic. 5 sccm $SF_6$/5 sccm $CH_4$ plasma resulted in $0.02{\mu}m$/min and $0.07{\mu}m$/min at 25W and 150W RIE of chuck power. The etch selectivity of acrylic to photoresist was higher in $SF_6/O_2$ plasma than in pure $SF_6$ or $SF_6/CH_4$ plasma. The maximum RMS roughness (7.6 nm) of an etched acrylic surface was found to be 50% $O_2$ in $SF_6/O_2$ plasma. Besides the process regime, the RMS roughness of acrylic was approximately $3{\sim}4\;nm$ at different percentages of $O_2$ with a chuck power of 100W RIE in $SF_6/O_2$ plasma etching.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.516-520
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• 2009

Atmosphere Plasmas of Gas Discharge (APGD) have been used in plasma sources for material processing such as etching, deposition, surface modification, etc. This study is to investigate and understand the fundamental plasma discharge properties. Especially, $SF_6/N_2$ mixed gas would be used in power transformer, GIS (Gas insulated switchgear) and so on. In this paper, we developed a one dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). 38 kinds of $SF_6/N_2$ plasma particles which are an electron, two positive ions (${SF_5}^+$, ${N_2}^+$), five negative ions (${SF_6}^-$, ${SF_5}^-$, ${SF_4}^-$, ${F_2}^-$, ${F_1}^-$), thirty excitation and vibrational particles for $N_2$ were considered in this computation. The $N_2$ gases of 20%, 50%, 80% were mixed in $SF_6$ gas. As the amount of $N_2$ gas was increased, the properties of electro-negative plasma moved toward the electro-positive plasma.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.438-440
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• 1995

The impedance characteristics and plasma parameters were experimentally studied in a weakly magnetized planar type, inductively coupled plasma (ICP) system. Compared with non-magnetized for system higher power transfer efficiency, stable impedance matching, enhancement of plasma density and higher electron temperature can be obtained. Such improvements are mainly due to the excitation of deeply penetrating electromagnetic wave and reduction of radial loss of electrons. In particulary, $SF_6$ (sulfur hexafluride) plasma shows unstable impedance matching in non-magnetized ICP because electronegativity of $SF_6$ effects on plasma characteristics. But, magnetized inductively coupled $SF_6$ plasma shows enough impedance matching stability to be applicable to the polysilicon etching in semiconductor process.

• Journal of Korean Society for Atmospheric Environment
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• v.33 no.4
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• pp.326-332
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• 2017

$SF_6$ (sulfur hexafluoride) gas has an extremely high global warming potential (GWP). Therefore, there has been an effort to reduce of $SF_6$ its emission into atmosphere. In this study, $SF_6$ was injected into the plasma reactor directly, decomposed particulate matter of $SF_6$ was analyzed. Destruction and removal efficiency (DRE) of $SF_6$ were tested with varying degrees of plasma power and initial concentrations of $SF_6$ (1,000 ppm). This study is conducted with plasma power which are 4.4 kW, 5.5 kW, 6.0 kW, 6.6 kW, 7.6 kW, 8.1 kW and 9.1 kW. It was confirmed through experiment that the decomposition efficiency of $SF_6$ is 100% at 7.6 kW of the plasma power. In addition, the particulate matter is formed as minute particles of which size is $1{\mu}m$ and the main component of particulate matter is identified as $AlF_3$.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.149-152
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• 1999

This paper represents the characteristic analyses for the etching in SF6 plasma and the plasma itself, based on the specific knowledges on the discharge mechanism of SF6 plasma which is widely used for the applications of dry etching, using Radio Frequency Inductively Coupled Plasma (RFICP) by measuring electron density, electron temperature then observing their relationship to find the effect of discharge mechanism of SF6 plasma to the etching in contrast to the existing method of finding optimal discharge condition by heuristic.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1111-1113
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• 1999

This paper represents the characteristic analysis for the etching in $SF_6$ plasma and the plasma itself, based on the specific knowledges on the discharge mechanism of $SF_6$ plasma which is widely used for the applications of dry etching, using Radio Frequency Inductively Coupled Plasma (RFICP) by measuring electron density, electron temperature then observing their relationship to find the effect of discharge mechanism of $SF_6$ plasma to the etching in contrast to the existing method of finding optimal discharge condition by heuristic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.203-207
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• 1998

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, the $SF_6$ plasma treatment subsequent to the etch has been carried out. A passivation layer is formed by fluorine-related compounds on etched Al-Cu alloy surface after $SF_6$ treatment, and the layer suppresses effectively the corrosion on the surface as the RF power of $SF_6$ treatment increases. The corrosion could be suppressed successfully with $SF_6$ treatment in the RF power of 150watts.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.291-297
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• 1999

The plasma etching of tungsten thin films has been studied with $SF_6$ gas in RIE system. The etch rate of ${\alpha}$-phase W film with $SF_6$ gas plasma has been showed to depend strongly on process parameters ($SF_6$, $SF_6-N_2$ gas). Effect of $N_2$ addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after $SF_6-N_2$ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.63-67
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• 2001

Up to now, most studies about Pt-etching have been focused on physical sputtering mechanism with Cl-based plasma, while only a limited results are available for etching characteristics with fluorine-based plasma. In this study, etch characteristics of Pt thin film with $Cl_2$/Ar and $SF_{6}$/Ar Ar gas chemistries have been studied with ECR plasma etching system. It is confirmed that $SF_{6}$/Ar Ar plasma chemistry could make volatile etch-products through the reaction with Pt thin film. Also the improvement in etch rate, etch profile and surface roughness is obtained due to the formation of volatile platinum fluoride compounds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.447-452
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• 1998

The selective dry etching of GaAs to Al\ulcornerGa\ulcornerAs using $BCI_3/SF_6$ gas mixture in electron cyclotron resonance(ECR) plasma is investigated. A selectivity of GaAs to AlGaAs of more than 100 and maximum etch rate of GaAs are obtained at a gas ratio $SF_6/BCI_3+SF_6$ of 25%. We verified the formation of $AlF_3$ on $Al_{0.25}Ga_{0.75}As$from the Auger spectra which enhanced the etch selectivity. In order to investigate surface damage of AlGaAs caused by ECR plasma, we performed a low temperature photoluminescence(PL) measurement as a function of RF power. As the RF power. As the RF power increases, the PL intensity decreases monotonically from 50 to 100 Wand then repidly decreases until 250 W. This behavior is due to surface damage by plasma treatment. This dry etching technique using $BCI_3/SF_6$ gas mixture in ECR plasma is suitable for gate recess formation on the GaAs based pseudomorphic high electron mobility transistor(PHEMT)