• Title/Summary/Keyword: $RuO_2$/Ti Electrode

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Study on the Shift in the P-E Hysteresis Curve and the Fatigue Behavior of the PZT Capacitors Fabricated by Reactive Sputtering (반응성 스퍼터링법으로 형성시킨 PZT 커패시티의 P-E 이력곡선의 이동현상 및 피로 특성 연구)

  • Kim, Hyun-Ho;Lee, Won-Jong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.983-989
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    • 2005
  • [ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

Preparation and characterization of SrBi$_{2}$Ta$_{2}$ $O_{9}$ ferroelectric thin films for nonvolatile memory (비휘발성 메모리용 SrBi$_{2}$Ta$_{2}$ $O_{9}$강유전체 박막의 제조 및 특성연구)

  • 장호정;서광종;장기근
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.3
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    • pp.39-45
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    • 1998
  • SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

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Electrochemical Treatment of Dye Wastewater Using Fe, RuO2/Ti, PtO2/Ti, IrO2/Ti and Graphite Electrodes (RuO2/Ti, PtO2/Ti, IrO2/Ti 및 흑연전극을 이용한 염료폐수의 전기화학적 처리)

  • Kim, A Ram;Park, Hyun Jung;Won, Yong Sun;Lee, Tae Yoon;Lee, Jae Keun;Lim, Jun Heok
    • Clean Technology
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    • v.22 no.1
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    • pp.16-28
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    • 2016
  • Textile industry is considered as one of the most polluting sectors in terms of effluent composition and volume of discharge. It is well known that the effluents from textile dying industry contain not only chromatic substances but also large amounts of organic compounds and insolubles. The azo dyes generate huge amount of pollutions among many types of pigments. In general, the electrochemical treatments, separating colors and organic materials by oxidation and reduction on electrode surfaces, are regarded as simpler and faster processes for removal of pollutants compared to other wastewater treatments. In this paper the electrochemical degradation characteristics of dye wastewater containing CI Direct Blue 15 were analyzed. The experiments were performed with various anode materials, such as RuO2/Ti, PtO2/Ti, IrO2/Ti and graphite, with stainless steel for cathode. The optimal anode material was located by changing operating conditions like electrolyte concentration, current density, reaction temperature and initial pH. The degradation efficiency of dye wastewater increased in proportion to the electrolyte concentration and the current density for all anode materials, while the temperature effect was dependent on the kind. The performance orders of anode materials were RuO2/Ti > PtO2/Ti > IrO2/Ti > graphite in acid condition and RuO2/Ti > IrO2/Ti > PtO2/Ti > graphite in neutral and basic conditions. As a result, RuO2/Ti demonstrated the best performance as an anode material for the electrochemical treatment of dye wastewater.

Microstructural Characterization of MOCVD RuOx Thin Films and Effects of Annealing Gas Ambient (MOCVD RuOx 박막의 미세구조 특성평가와 열처리 가스환경 영향)

  • Kim, Gyeong-Won;Kim, Nam-Su;Choe, Il-Sang;Kim, Ho-Jeong;Park, Ju-Cheol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.9
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    • pp.423-429
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    • 2002
  • RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.

Electrochemical Generation of Chlorine Dioxide from Sodium Chlorite Using Un-Divided Electrochemical Cell: Effect of Anode Materials (아염소산나트륨의 무격막 전기분해에 의한 이산화염소 생성: 양전극 재질에 따른 영향)

  • Kwon, Tae Ok;Park, Bo Bae;Roh, Hyun Cheul;Moon, Il Shik
    • Korean Chemical Engineering Research
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    • v.48 no.2
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    • pp.275-282
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    • 2010
  • A characteristic study of aqueous chlorine dioxide generation from sodium chlorite($NaClO_2$) by an undivided electrochemical cell with different anode materials were performed. $IrO_2$-coated Ti, $RuO_2$-coated Ti and DSA were used as anode materials and Pt-coated Ti electrode was used as cathode. Various electrochemical cell operating parameters such as cell residence time($t_R$), initial feed solution pH, sodium chlorite and sodium chloride(NaCl) concentration and applied current for the generation of chlorine dioxide in an un-divided cell were investigated and optimized. Estimated optimal cell residence times in $IrO_2$-coated Ti, $RuO_2$-coated Ti and DSA anode material systems were around 2.27, 1.52 and 1.52 sec, respectively. Observed optimum initial feed solution pH was around 2.3 in all anode material systems. Optimum sodium chlorite concentrations in $IrO_2$-coated Ti, $RuO_2$-coated Ti and DSA anode systems were around 0.43, 0.43 and 0.32 g/L, respectively. Optimum electrolyte concentration and applied current were around 5.85 g/L and 0.6 A in all anode systems. Current efficiencies of $IrO_2$-coated Ti, $RuO_2$-coated Ti and DSA anode systems under optimum conditions were 79.80, 114.70 and 70.99%, respectively. Obtained energy consumptions for the optimum generation of chlorine dioxide were 1.38, 1.03 and $1.61W{\cdot}hr/g-ClO_2$, respectively.

The improvement in the properties of $(Ba, Sr)TiO_3$films by the application of amorphous layer (비정질 $(Ba, Sr)TiO_3$층의 도입을 통한 $(Ba, Sr)TiO_3$박막의 특성 향상)

  • 백수현;이공수;마재평;박치선
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.221-226
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    • 1998
  • Amorphous (Ba, Sr)$TiO_3$[BST] layer(30, 70 nm) was introduced between crystalline BST and $RuO_2$electrode to realize double-layered BST structure in order to improve the properties of BST film. The structure and surface morphology of double-layered BST film were modified by the application of amorphous BST layer; that is, surface became smoother and grain size increased abruptly. Amorphous layer thicker than 30 nm was effective to hinder the influence of $RuO_2$surface on the structure of as-grown BST films by in-situ process. Dielectric constant of double-layered BST film was improved dramatically from 152 to 340 and leakage current was lowered from $1.25{\times}10^{-5}A/{\textrm}{cm}^2);to;6.85{\times}10^{-7}A/{\textrm}{cm}^2$, respectively.

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Structural and Ferroelectric Properties of PZT Thin Films Deposited on SrRuO3 Electrode Films (SrRuO3 전극 박막 위에 증착된 PZT 박막의 구조 및 강유전 특성)

  • Lee, Myung Bok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.10
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    • pp.620-624
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    • 2016
  • Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

Fabrication and charaterization of $RuO_2$based thin film supercapacitor ($RuO_2$박막을 이용한 박막 슈퍼캐패시터의 제작 및 분석)

  • 임재홍;최두진;전은정;남성철;조원일;윤영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.920-923
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    • 2000
  • All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.

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Oxygen Evolution Reaction at Electrodes of Single Phase Ruthenium Oxides with Perovskite and Pyrochlore Structures$^{**}$

  • 최은옥;권영욱;모선일
    • Bulletin of the Korean Chemical Society
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    • v.18 no.9
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    • pp.972-976
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    • 1997
  • Single phase ruthenium oxides with perovskite (ATi1-xRuxO3 (A=Ca, Sr)) and pyrochlore structure (Bi2Ru2O7, Pb2Ru2O6.5) have been prepared reproducibly by solid state reaction methods and their electrocatalytic activities for oxygen evolution have been examined by Tafel plots. Tafel slopes vary from a low value of 42 mV/decade up to 222 mV/decade at room temperature. The high exchange current densities and high Tafel slopes compared with those obtained from the RuO2 DSA electrode at the crystalline single phase metal oxide electrodes suggest that they are better electrocatalysts at low overpotentials. A favorable change in the Tafel slope for the oxygen evolution reaction occurs as the ruthenium content increases. Substitution of Ti for Ru in the perovskite solid solutions enhanced their chemical stability by losing marginal electrochemical activity.