• 전자공학회논문지D
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• 제35D권8호
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• pp.8-14
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• 1998

A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are $Q_{D}$= $1.5{\times}10^{14}$atoms/$\textrm{cm}^2$ and $R_{s}$= 350 $\Omega/\square$ base wodtj $W_{B}$= $2.5{\mu}m$respectively. Under this condition it is possible to control $\beta$ of the transistor to 1500, maintaining $VB_{CBO}$ =200V. To reduce scattered distribution of .beta. of the devices on the wafer, it is necessary to improve emittter predeposition process. As a result, scattered distribution of .beta. of the devices on the wafer was reduced to 1/6 by using the new process. To improve collector to emitter forward voltage drop, $V_{ECF}$ of damper diode, an additional silicon etching process is used, which resulted in improving the value of $V_{eCF}$ from 2.8 V to 1.8V. With the suggested process superior device performance and higher yield are achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.394-394
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• 2007

Transparent conductive films can serve as a critical component in displays, solar cells, lasers, optical communication devices, and solid state lighting. Carbon nanotube (CNT) based transparent conductive films are fabricated on glass and polymer substrates. CNTs typically exist in form of quasi-crystalline bundles or highly entangled bundles containing tens of individual nanotubes. To achieve full potential, CNTs must be dispersed in a solvent or other organic media. CNTs are acid treated with nitric acid then the stable dispersion of CNTs in polar solvent such as alcohols, DMF, etc. is achieved by sonication. The solubility of CNTs correlates well with the area ratio of the D and G bands from Raman spectrum. Thin films are formed from well dispersed CNT solutions using spray coating method. CNT thin films exhibit a sheet resistance ($R_s$) of nearby $10^3\;{\Omega}/sq$ with a transmittance of around 80% on the visible light range, which is attributed by excellent dispersion and interaction among CNTs, solvents and polymeric binders.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.77-77
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• 2007

The development of next generation displays such as flexible display is a major challenge. Most materials and processes in current flat panel display industry cannot be transferred to flexible substrates. Typically, indium tin oxide (ITO) thin films are brittle and need to be deposited at high temperature to achieve an optimal opto-electrical property, therefore ITO films cannot be used as a flexible electrode. Up to date, many alternative materials to ITO have been proposed such as conductive polymers, nanometals, solution deposited transparent conductive oxide(TCO) and carbon nanotubes(CNTs). CNT based transparent conductive films are fabricated on glass and polymer substrates. CNT thin films exhibit a sheet resistance ($R_s$) of nearby $10^3\;{\Omega}/sq$ with a transmittance of around 80% on the visible light range, which is attributed by excellent dispersion and interaction among CNTs, solvents and polymeric binders. This talk will present the current studies, opto-electrical properties, design criteria and its applications for CNT-based transparent conductive films.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.376-381
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• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• 한국재료학회지
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• 제2권5호
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• pp.375-382
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• 1992

Composite target(MoS$i_{2.3}$)으로 부터 Mo-silicide를 형성시, 단결정 실리콘 위에 P, B$F_2$불순물(5${\times}10^{15}ions/cm^2$)과 다결정 실리콘 위에 P 불순물(5${\times}10^{15}ions/cm^2$)을 이온 주입하여 아르곤 분위기에서 급속열처리(RTA)하였다. 열처리는 600-120$0^{\circ}C$ 온도구간에서 20초간 행하였다. Mo-silicide의 특성 및 불순물의 거동은 4-point probe, X선 회절분석, SEM, SIMS, $\alpha$-step을 통해 조사하였다. 80$0^{\circ}C$에서 부터 MoS$i_2가 형성되며 열처리 온도가 증가할수록 낮은 비저항간을 갖는 안정한 MoS$i_2로 결정화가 이루어진다. 또한 열처리 동안 단결정 실리콘과 다결정 실리콘에서 Mo-silicide층으로 불순물의 내부 확산은 거의 발생하지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.27-27
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• 2009

Non-stochiometric CdS:H films grown on polyethersulfon (PES) flexible polymer substrates at room temperature by R.F. sputtering technique. They exhibited a dark- and photo-sheet resistance of $2.7\times10^5$ and $\sim\;50\;{\Omega}$/square, respectively. These values were realized by an optimum control of both hydrogen doping-levels and the surface morphologies of the films. The comparison between the real and the simulated results for the shielding and the transmission by the free space measurement system in the X-band frequency range (8.2 - 12.4 GHz) was also addressed in this study. Samples overlapped with 13 layers of CdS:H/PES were consistent with the transmission results of pure aluminum metal films ($0.1\;{\Omega}$/square) deposited on PES substrates. As a result, by the simples tacking of the CdS:H/PES layers, the perfect control of the shielding and the transmission of the EM wave in the range of X-band frequency is possible by avisible light alone, and their results are especially very outstanding findings in the stealth function of the radome(Radar+Dome) such as aircrafts, ships, and missiles.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.25-37
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• 2020

본 연구에서는 그래핀 소재의 전기전도성 및 자기적 특성을 향상시키기 위해 산화그래핀 표면상의 산소를 포함한 기능기와 열처리 환원공정을 이용하여 환원그래핀과 금속소재를 하리브리드화 하였다. 산화 그래핀 표면의 -OH, -COOH 등의 산소 포함 기능기들을 열처리 환원시킴과 동시에 금속이온을 기능기와의 이온교환법에 의해 치환 합성하는 연구를 진행하였다. 하이브리드 소재 합성에 사용된 금속은 Fe, Ag, Ni, Zn, Fe/Ag이며 SEM, TEM 및 EDS를 통해 환원 그래핀 표면 위에 균일한 크기의 금속 입자가 비교적 구형 잘 분산되었음을 확인하였다. 그래핀 표면상의 금속입자들은 모두 산화물 형태의 구조를 가지고 있었다. 하이브리드 소재의 전기적 특성을 확인하기 위해 rGO-metal hybrid 시료를 PET film에 dip-coating 방법으로 후막 필름을 형성시킨 후 면저항을 측정하였고, SEM을 통해 시편의 두께를 측정하여 비저항을 계산한 결과, 비저항의 범위는 2.14×10-5 ~ 3.5×10-3 ohm/cm범위에 있음을 확인하였다.

• 한국재료학회지
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• 제8권10호
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• pp.956-960
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• 1998

XPS와 glancing angle XRD, AES 및 AFM을 사용하여 $330^{\circ}C$-$800^{\circ}C$사이의 진공분위기에서 열처리할 때, Co/Nb이중층과 $SiO_2$기판 사이의 계면반응을 조사하였다. $600^{\circ}C$에서 Co와 Nb는 서로 활발하게 확산하여, $700^{\circ}C$이상에서는 두 층사이의 충역전이 완전히 일어났다. 그 때 Nb 중간층과 $SiO_2$기판 사이의 반응에 의하여 계면에 일부 NbO가 형성되었으며, 표면에서는 분위기 중의 산소에 의하여 $Nb_2O_5$가 생성되었다. Nb와 기판간의 반응에 의하여 유리된 Si는 $600^{\circ}C$이상에서 잔류 Co 및 Nb와 반응하여 실리사이드를 형성하였다. Co/Nb 이중층 구조는 $800^{\circ}C$에서 열처리한 후 면저항이 급증하기 시작하였는데, 이것은 Co층이 기판과 바로 접하게 되어 계면에너지를 줄이기 위해 응집되기 때문이다.

• 한국재료학회지
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• 제2권6호
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• pp.408-416
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• 1992

Single-Si 기판과 poly-Si 기판에 각각 Ti을 sputter한 후 RTA 처리하여 안정한 TiS$i_2$를 형성하였다. 그 위에 Si이 1% 첨가된 Al-1% Si을 600nm sputter한 후 후속 열처리로서 400-60$0^{\circ}C$ 에서 30분간 $N_2$분위기로 furnace어닐링을 실시하였다. 이렇게 준비된 각 시편에 대하여 면저항 측정, Auger분석, SEM 사진으로 Al-1% Si/TiS$i_2$이중층 구조에서 Ti-silicide의 열적 안정성을 살펴 보았고, EDS 분석과 X-ray 회절 peak 분석을 통하여 Al-1% Si 층과 TiS$i_2$층의 반응으로 생긴 석출물의 성분과 상을 조사하였다. 이로 부터 다음과 같은 결과를 얻었다 Single-Si 기관에서 형성한 TiS$i_2$층은 Al-1% Si 층과 55$0^{\circ}C$에서 완전히 반응하여 석출물을 형성하였고, poly-Si 기판에서 형성한 TiS$i_2$층은 Al-1% Si 층과 50$0^{\circ}C$에서 완전히 반응하여 석출물을 형성하였는데 전반적으로 기판이 poly-Si인 경우가 반응이 더 잘 일어났고, 석출물의 크기도 비교적 컸다. 이는 poly-Si에 존재하는 grain boundary로 인해 poly-Si에서 형성된 Ti-silicide 층이single-Si 기관에서 형성된 Ti-silicide 층보다 불안정하기 때문으로 생각된다. EDS 분석에 의하여 석출물은 Ti, Al, 그리고 Si로 이루어진 3상 화합물이라고 추정되었고, X-ray회절 분석에 의해 석출물은 Ti, Al, 그리고 Si간의 3상 화합물인 T$i_7$A$l_5$S$i_12$로 확인되었다.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.