• 제목/요약/키워드: $P_n$

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WEAK AND STRONG CONVERGENCE TO COMMON FIXED POINTS OF NON-SELF NONEXPANSIVE MAPPINGS

  • Su, Yongfu;Qin, Xiaolong
    • Journal of applied mathematics & informatics
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    • 제24권1_2호
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    • pp.437-448
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    • 2007
  • Suppose K is a nonempty closed convex nonexpansive retract of a real uniformly convex Banach space E with P as a nonexpansive retraction. Let $T_1,\;T_2\;and\;T_3\;:\;K{\rightarrow}E$ be nonexpansive mappings with nonempty common fixed points set. Let $\{\alpha_n\},\;\{\beta_n\},\;\{\gamma_n\},\;\{\alpha'_n\},\;\{\beta'_n\},\;\{\gamma'_n\},\;\{\alpha'_n\},\;\{\beta'_n\}\;and\;\{\gamma'_n\}$ be real sequences in [0, 1] such that ${\alpha}_n+{\beta}_n+{\gamma}_n={\alpha}'_n+{\beta'_n+\gamma}'_n={\alpha}'_n+{\beta}'_n+{\gamma}'_n=1$, starting from arbitrary $x_1{\in}K$, define the sequence $\{x_n\}$ by $$\{zn=P({\alpha}'_nT_1x_n+{\beta}'_nx_n+{\gamma}'_nw_n)\;yn=P({\alpha}'_nT_2z_n+{\beta}'_nx_n+{\gamma}'_nv_n)\;x_{n+1}=P({\alpha}_nT_3y_n+{\beta}_nx_n+{\gamma}_nu_n)$$ with the restrictions $\sum^\infty_{n=1}{\gamma}_n<\infty,\;\sum^\infty_{n=1}{\gamma}'_n<\infty,\; \sum^\infty_{n=1}{\gamma}'_n<\infty$. (i) If the dual $E^*$ of E has the Kadec-Klee property, then weak convergence of a $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is proved; (ii) If $T_1,\;T_2\;and\;T_3$ satisfy condition(A'), then strong convergence of $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is obtained.

코발트 실리사이드 접합을 사용하는 0.15${\mu}{\textrm}{m}$ CMOS Technology에서 얕은 접합에서의 누설 전류 특성 분석과 실리사이드에 의해 발생된 Schottky Contact 면적의 유도 (Characterization of Reverse Leakage Current Mechanism of Shallow Junction and Extraction of Silicidation Induced Schottky Contact Area for 0.15 ${\mu}{\textrm}{m}$ CMOS Technology Utilizing Cobalt Silicide)

  • 강근구;장명준;이원창;이희덕
    • 대한전자공학회논문지SD
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    • 제39권10호
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    • pp.25-34
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    • 2002
  • 본 논문에서는 코발트 실리사이드가 형성된 얕은 p+-n과 n+-p 접합의 전류-전압 특성을 분석하여 silicidation에 의해 형성된 Schottky contact 면적을 구하였다. 역방향 바이어스 영역에서는 Poole-Frenkel barrier lowering 효과가 지배적으로 나타나서 Schottky contact 효과를 파악하기가 어려웠다. 그러나 Schottky contact의 형성은 순방향 바이어스 영역에서 n+-p 접합의 전류-전압 (I-V) 동작에 영향을 미치는 것으로 확인되었다. 실리사이드가 형성된 n+-p 다이오드의 누설전류 증가는 실리사이드가 형성될 때 p-substrate또는 depletion area로 코발트가 침투퇴어 Schottky contact을 형성하거나 trap들을 발생시켰기 때문이다. 분석결과 perimeter intensive diode인 경우에는 silicide가 junction area까지 침투하였으며, area intensive junction인 경우에는 silicide가 비록 공핍층이나 p-substrate까지 침투하지는 않았더라도 공핍층 근처까지 침투하여 trap들을 발생시켜 누설전류를 증가시킴을 확인하였다. 반면 p+-n 다이오드의 경우 Schottky contact이발생하지 않았고 따라서 누설전류도 증가하지 않았다. n+-p 다이오드에서 실리사이드에 의해 형성된 Schottky contact 면적은 순방향 바이어스와 역방향 바이어스의 전류 전압특성을 동시에 제시하여 유도할 수 있었고 전체 접합면적의 0.01%보다 작게 분석되었다.

$N^+-P/P^+$ 다결정 실리콘 태양 전지의 제작 및 특성 (Fabrication and Characteristics of $N^+-P/P^+$ Polycrystalline Silicon Solar Cell)

  • 정호선
    • 대한전자공학회논문지
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    • 제19권5호
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    • pp.38-42
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    • 1982
  • 비저항은 3∼60hm-cm이고 두께는 350∼400μm인 다결정 실리콘을 사용하여 n+-P/P+태양 전지를 제작하였다. 이 전지에 대한 소수 반송자의 수명은 Nd:YAG laser로 측정되었으며 100∼150ns 이었다. 전지의 변환 효율은 AM 1에서 4%로 측정 되었다.

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1N-아릴-2-메틸-3-에톡시카르보닐-피리디노 [2,3-f]인돌-4,9-디온 유도체의 합성 (II) (Synthesis of 1N-aryl-2-methyl-3-ethoxycarbonyl-pyridino [2,3-f]indole-4,9-dione derivatives (II))

  • 서명은;박희경
    • 약학회지
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    • 제41권5호
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    • pp.582-587
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    • 1997
  • The 6.7-dichloroquinoline-5,8-dione (I) was reacted with ethyl acetoacetate in the presence of sodium ethoxide to yield 6-(${\alpha}$-acetyl-${\alpha}$-ethoxycarbonyl methyl)-7-chloro-qui noline-5,8-dione(II). When this compound II was reacted with some arylamine (phenyl, p-toluyl, p-fluorophenyl, p-chlorophenyl. p-bromophenyl, p-iodophenyl, p-trifluoromethylphenyl, p-dimethylaminophenyl,indanyl), 1N-aryl-2-methyl-3-ethoxycarbonyl pyridino[2,3-f]-indole-4.9-dione(IIIa-I) were obtained via intramolecular cyclization.

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천연고무 가류물에서 왁스막이 오존노화방지제의 이동에 미치는 영향 (Wax Barrier Effect on Migration Behaviors of Antiozonants in NR Vulcanizates)

  • 최성신
    • Elastomers and Composites
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    • 제34권2호
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    • pp.147-155
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    • 1999
  • 고무와 혼합된 왁스는 고무 표면으로 이동하여 방어막을 형성한다. 일반적으로 고무의 오존화를 방지하기 위해 오존노화방지제를 왁스와 함께 사용하고 있다. 다양한 종류의 왁스가 첨가된 천연고무 가류물을 이용하여 왁스막이 오존노화방지제의 이동에 미치는 영향을 연구하였다 오존노화방지제로 IPPD (N-isopropyl-N'-phenyl-p-phenylenediamine), HPPD (N-l,3-dimethylbutyl-N'-phenyl-p-phenylenediamine), SBPPD (N,N'-di(sec-butyl)-p-phenylenediamine), 그리고 DMPPD (N,N'-di(1,4-dimethylpentyl)-p-phenylenediamine)를 사용하였다. 노화방지제 이동 실험은 $60^{\circ}C$$80^{\circ}C$에서 10, 20, 30일간 실시하였다. 노화방지제의 이동속도는 고무가류물에 왁스가 없을 때가 있을 때보다 빨랐으며 분자량이 큰 왁스가 혼합되었을 때가 분자량이 작은 왁스가 혼합되었을 때보다 느렸다. DMPPD와 SBPPD의 이동속도가 HPPD와 IPPD의 이동속도보다 빨랐다.

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RSA의 오일러 함수 𝜙(n) 해독 2kβ 알고리즘 (A 2kβ Algorithm for Euler function 𝜙(n) Decryption of RSA)

  • 이상운
    • 한국컴퓨터정보학회논문지
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    • 제19권7호
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    • pp.71-76
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    • 2014
  • 대표적인 공개키 암호방식인 RSA에 사용되는 합성수 n=pq의 큰자리 소수 p,q를 소인수분해하여 구하는 것은 사실상 불가능하다. 공개키 e와 합성수 n은 알고 개인키 d를 모를 때, ${\phi}(n)=(p-1)(q-1)=n+1-(p+q)$을 구하여 $d=e^{-1}(mod{\phi}(n))$의 역함수로 개인키 d를 해독할수 있다. 따라서 ${\phi}(n)$을 알기위해 n으로부터 p,q를 구하는 수학적 난제인 소인수분해법을 적용하고 있다. 소인수분해법에는 n/p=q의 나눗셈 시행법보다는 $a^2{\equiv}b^2(mod\;n)$, a=(p+q)/2,b=(q-p)/2의 제곱합동법이 일반적으로 적용되고 있다. 그러나 다양한 제곱합동법이 존재함에도 불구하고 아직까지도 많은 RSA 수들이 해독되지 않고 있다. 본 논문은 ${\phi}(n)$을 직접 구하는 알고리즘을 제안하였다. 제안된 알고리즘은 $2^j{\equiv}{\beta}_j(mod\;n)$, $2^{{\gamma}-1}$ < n < $2^{\gamma}$, $j={\gamma}-1,{\gamma},{\gamma}+1$에 대해 $2^k{\beta}_j{\equiv}2^i(mod\;n)$, $0{\leq}i{\leq}{\gamma}-1$, $k=1,2,{\ldots}$ 또는 $2^k{\beta}_j=2{\beta}_j$${\phi}(n)$을 구하였다. 제안된 알고리즘은 $n-10{\lfloor}{\sqrt{n}}{\rfloor}$ < ${\phi}(n){\leq}n-2{\lfloor}{\sqrt{n}}{\rfloor}$의 임의의 위치에 존재하는 ${\phi}(n)$도 약 2배 차이의 수행횟수로 찾을 수 있었다.

SOME EXTENSION RESULTS CONCERNING ANALYTIC AND MEROMORPHIC MULTIVALENT FUNCTIONS

  • Ebadian, Ali;Masih, Vali Soltani;Najafzadeh, Shahram
    • 대한수학회보
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    • 제56권4호
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    • pp.911-927
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    • 2019
  • Let $\mathscr{B}^{{\eta},{\mu}}_{p,n}\;({\alpha});\;({\eta},{\mu}{\in}{\mathbb{R}},\;n,\;p{\in}{\mathbb{N}})$ denote all functions f class in the unit disk ${\mathbb{U}}$ as $f(z)=z^p+\sum_{k=n+p}^{\infty}a_kz^k$ which satisfy: $$\|\[{\frac{f^{\prime}(z)}{pz^{p-1}}}\]^{\eta}\;\[\frac{z^p}{f(z)}\]^{\mu}-1\| <1-{\frac{\alpha}{p}};\;(z{\in}{\mathbb{U}},\;0{\leq}{\alpha}<p)$$. And $\mathscr{M}^{{\eta},{\mu}}_{p,n}\;({\alpha})$ indicates all meromorphic functions h in the punctured unit disk $\mathbb{U}^*$ as $h(z)=z^{-p}+\sum_{k=n-p}^{\infty}b_kz^k$ which satisfy: $$\|\[{\frac{h^{\prime}(z)}{-pz^{-p-1}}}\]^{\eta}\;\[\frac{1}{z^ph(z)}\]^{\mu}-1\|<1-{\frac{\alpha}{p}};\;(z{\in}{\mathbb{U}},\;0{\leq}{\alpha}<p)$$. In this paper several sufficient conditions for some classes of functions are investigated. The authors apply Jack's Lemma, to obtain this conditions. Furthermore, sufficient conditions for strongly starlike and convex p-valent functions of order ${\gamma}$ and type ${\beta}$, are also considered.

n-ZnO/i-ZnO/p-GaN:Mg 이종접합을 이용한 UV 발광 다이오드 (Ultraviolet LEDs using n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction)

  • 한원석;김영이;공보현;조형균;이종훈;김홍승
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.50-50
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    • 2008
  • ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

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GENERALIZED LOCAL COHOMOLOGY AND MATLIS DUALITY

  • Abbasi, Ahmad
    • 호남수학학술지
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    • 제30권3호
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    • pp.513-519
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    • 2008
  • Let (R, m) be a Noetherian local ring with maximal ideal m, E := $E_R$(R/m) and let I be an ideal of R. Let M and N be finitely generated R-modules. It is shown that $H^n_I(M,(H^n_I(N)^{\vee})){\cong}(M{\otimes}_RN)^{\vee}$ where grade(I, N) = n = $cd_i$(I, N). We also show that for n = grade(I, R), one has $End_R(H^n_I(P,R)^{\vee}){\cong}Ext^n_R(H^n_I(P,R),P^*)^{\vee}$.

n-6/n-3 비율과 P/S 비율을 변화시킨 식이지방이 나이가 다른 흰쥐의 체내 지방대사에 미치는 영향 (The Effects of n-6/n-3 and P/S Ratio of Dietary Lipid on Lipid Metabolism of Rats at Different Age)

  • 김숙희
    • Journal of Nutrition and Health
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    • 제27권7호
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    • pp.687-698
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    • 1994
  • The effects of age and dietary fatty acid composition on lipid metabolism were investigated in Sprague-Dawley strain male rats. These animals weighing 88.6$\pm$2.2g were fed 10% dietary fat(W/W, 20% of total energy) with 0.5, 1, 2 P/S ratio and in each P/S ratio there were three different levels of n-6/n-3 fatty acid ratio ; 2, 4, 8. The experimental period was 1 month, 6 months and 12 months. The results of this study were as follows. The body weight of rats increased rapidly for the first two months, then increased slowly until 7 to 8 months. After 10 months of dietary regimen their weight decreased. The weight of liver, kidney and epidydimal fat pad increased along with the body weight and then decreased in the 12 months. Plasma total lipid increased with age and it decreased significantly when P/S ratio of dietary fatty acid was high. In creased with age and it decreased significantly when P/S ratio of dietary fatty acid was high. In creasing n-3 fatty acid intake in each P/S ratio resulted in lower plasma total lipid although was not statistically significant. The amount of plasma total cholesterol increased at 6 months, but decreased at 12 months. In case of 1, 12 months, increasing P/S ratio significantly plasma total cholesterol and LDL-cholesterol were decreased and hepatic cholesterol was increased, VLDL-HDL-cholesterol did not changed. The n-6/n-3 ratio did not affect any of theses. The amount of plasma triglyceride and VLDL-triglyceride increased at 6 month then decreased. When the rats consumed higher amount of n-3 fatty acid in each P/S ratio, their plasma triglyceride and hepatic triglyceride increased at 1, 12months.

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