• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3835-3839
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• 2013

A new synthesis route for Pt nanoparticles by direct electrochemical reduction of a solid-state Pt ion precursor ($K_2PtCl_6$) is demonstrated. Solid $K_2PtCl_6$-supported polyethyleneimine (PEI) coatings on the surface of glassy carbon electrode were prepared by simple mixing of solid $K_2PtCl_6$ into a 1.0% PEI solution. The potential cycling or a constant potential in a PBS (pH 7.4) medium were applied to reduce the solid $K_2PtCl_6$ precursor. The reduction of Pt(IV) began at around -0.2 V and the reduction potential was ca. -0.4 V. A steady state current was achieved after 10 potential cycling scans, indicating that continuous formation of Pt nanoparticles by electrochemical reduction occurred for up to 10 cycles. After applying the reduction potential of -0.6 V for 300 s, Pt nanoparticles with diameters ranging from $0.02-0.5{\mu}m$ were observed, with an even distribution over the entire glassy carbon electrode surface. Characteristics of the Pt nanoparticles, including their performance in electrochemical reduction of $H_2O_2$ are examined. A distinct reduction peak observed at about -0.20 V was due to the electrocatalytic reduction of $H_2O_2$ by Pt nanoparticles. From the calibration plot, the linear range for $H_2O_2$ detection was 0.1-2.0 mM and the detection limit for $H_2O_2$ was found to be 0.05 mM.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.295-298
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• 1989

Using the anisotropic etching characteristics or $N_2H_4-H_2O$ solution, Si diaphragm was fabricated for the integrated sensor. The optimal composition and temperature of the solution in Si etching process was established to be 50mol% $N_2H_4$ in water at $105{\pm}2^{\circ}C$ for both higher etch rate(=$2.6{\mu}m/min$) and better surface quality of etched {100} planes. Under the optimal etching condition, the electrochemical etch stop technique was employed to form Si diaphragm for pressure sensor and diaphragm thickness was exactly controlled to $20{\pm}2{\mu}m$.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.211-215
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• 2006

Conducting polymer (Polypyrrole) and Tin oxide ($SnO_{2}$) composite films have been fabricated with layer-by-layer technique. $SnO_{2}$ layer was screen-printed on $Al_{2}O_{3}$ substrate and then was dip-coated with polypyrrole (Ppy). The microstructures of composite films were evaluated by a field emission scanning electron microscope (FE-SEM) and FTIR spectral analysis. The change in sensitivity to various VOCs was observed. The target VOCs were methanol, ethanol, benzene and toluene. The sensitivities of the $Ppy/SnO_{2}$ sensor to benzene and toluene were very low at 1000 ppm (2.1 %, 1.5 %), while the sensitivities to methanol and ethanol was high (9 %, 11 %). It indicates that the sensors have selectivity to alcoholic gases such as methanol and ethanol.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.5
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• pp.933-940
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• 2022

In this paper, the algorithm was developed to recognize hand 3D position through 2D image sensor and implemented a system to remotely control the 6 d.o.f. robot arm by using it. The system consists of a camera that acquires hand position in 2D, a computer that controls robot arm that performs movement by hand position recognition. The image sensor recognizes the specific color of the glove putting on operator's hand and outputs the recognized range and position by including the color area of the glove as a shape of rectangle. We recognize the velocity vector of end effector and control the robot arm by the output data of the position and size of the detected rectangle. Through the several experiments using developed 6 axis robot, it was confirmed that the 6 d.o.f. robot arm remote control was successfully performed.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.54-62
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• 2009

${Co_3}{O_4}$ and ${Co_3}{O_4}$-based thick films with additives such as ${Co_3}{O_4}-{Fe_2}{O_3}$(5 wt.%), ${Co_3}{O_4}-{SnO_2}$ (5 wt.%), ${Co_3}{O_4}-{WO_3}$(5 wt.%) and ${Co_3}{O_4}$-ZnO(5 wt.%) were fabricated by screen printing method on alumina substrates. Their structural properties were examined by XRD and SEM. The sensitivities to iso-${C_4}H_{10}$, $CH_4$, CO, $NH_3$ and NO gases were investigated with the thick films heat treated at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. From the gas sensing properties of the films, the films showed p-type semiconductor behaviors. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed higher sensitivity to i-${C_4}H_{10}$ and CO gases than other thick-films. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed the sensitivity of 170 % to 3000 ppm iso-${C_4}H_{10}$ gas and 100 % to 100 ppm CO gas at the working temperature of $250^{\circ}C$. The response time to i-${C_4}H_{10}$ and CO gases showed rise time of about 10 seconds and fall time of about $3{\sim}4$ minutes. The selectivity to i-${C_4}H_{10}$ and CO gases was enhanced in the ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1180-1186
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• 2001

W $O_3$-Sn $O_2$thin film sensors with approximately 1${\mu}{\textrm}{m}$ in thickness were fabricated by using a high-vacuum resistance-heating evaporator, were annealed at 50$0^{\circ}C$ for 4 hours in air, and then their crystallinities and surface microstructures were analyzed. As results of gas-sensing characteristics to oxidizing gas, N $O_2$, and reducing gas, CO, of 100 ppm, the highest gas sensitivities (S= $R_{gas}$/ $R_{air}$) were the W $O_3$thin-film sensor measured at 25$0^{\circ}C$ for N $O_2$(S≒1000) and the Sn $O_2$thin-film sensor measured at 15$0^{\circ}C$ to 25$0^{\circ}C$ range for CO (S≒0.25), respectively.ely.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.21-26
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• 1995

Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.165-171
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• 2022

The SiO₂/TiO₂ multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO₂/TiO₂ with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λ_p) of 660 nm and NIR LEDs with λ_p of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO₂/TiO₂ band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1296-1300
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• 2004

SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.