• Title/Summary/Keyword: $O_2$ sensor

Search Result 1,271, Processing Time 0.031 seconds

Identification of Gas Mixture with the MEMS Sensor Arrays by a Pattern Recognition

  • Bum-Joon Kim;Jung-Sik Kim
    • Korean Journal of Materials Research
    • /
    • v.34 no.5
    • /
    • pp.235-241
    • /
    • 2024
  • Gas identification techniques using pattern recognition methods were developed from four micro-electronic gas sensors for noxious gas mixture analysis. The target gases for the air quality monitoring inside vehicles were two exhaust gases, carbon monoxide (CO) and nitrogen oxides (NOx), and two odor gases, ammonia (NH3) and formaldehyde (HCHO). Four MEMS gas sensors with sensing materials of Pd-SnO2 for CO, In2O3 for NOX, Ru-WO3 for NH3, and hybridized SnO2-ZnO material for HCHO were fabricated. In six binary mixed gas systems with oxidizing and reducing gases, the gas sensing behaviors and the sensor responses of these methods were examined for the discrimination of gas species. The gas sensitivity data was extracted and their patterns were determined using principal component analysis (PCA) techniques. The PCA plot results showed good separation among the mixed gas systems, suggesting that the gas mixture tests for noxious gases and their mixtures could be well classified and discriminated changes.

pH-Drift Characteristics of Sol-Gel-Deposited $Ta_{2}O_{5}$-Gate ISFET (Sol-Gel 법으로 형성한 $Ta_{2}O_{5}$ 게이트 ISFET의 pH 드리프트 특성)

  • Kwon, Dae-Hyuk;Cho, Byung-Woog;Kim, Chang-Soo;Sohn, Byung-Ki
    • Journal of Sensor Science and Technology
    • /
    • v.5 no.2
    • /
    • pp.15-20
    • /
    • 1996
  • The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFET to vary with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing tile drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about $70{\AA}$ thick by sol-gel method on $Si_{3}N_{4}/SiO_{2}$-gate of pH-ISFET. The fabricated $Ta_{2}O_{5}$-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH $3{\sim}11$, and had relatively small average pH drift of about 0.06 pH/day.

  • PDF

Characteristics of A Diaphragm-Type Fiber Optic Fabry-Perot Interferometric Pressure Sensor Using A Dielectric Film (유전체 박막을 이용한 다이아프램형 광섬유 Fabry-Perot 간섭계 압력센서의 특성)

  • Kim, M.G.;Yoo, Y.W.;Kwon, D.H.;Lee, J.H.;Kim, J.S.;Park, J.H.;Chai, Y.Y.;Sohn, B.K.
    • Journal of Sensor Science and Technology
    • /
    • v.7 no.3
    • /
    • pp.147-153
    • /
    • 1998
  • The strain characteristics of a fiber optic Fabry-Perot pressure sensor with high sensitivity using a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ (N/O/N) diaphragm is experimentally investigated. A 600 nm thick N/O/N diaphragm was fabricated by silicon anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot intereferometer and a N/O/N diaphragm. The 2 cm length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with $TiO_{2}$ dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a N/O/N diaphragm. and the other end was connected to an optical setup through a 3 dB coupler. For the N/O/N diaphragm sized $2{\times}2\;mm^{2}$ and $8{\times}8\;mm^{2}$, the pressure sensitivity was measured 0.11 rad/kPa and 1.57 rad/kPa, respectively, and both of the nonlinearities were less than 0.2% FS.

  • PDF

Preparation of $SnO_2$ Semiconducting Gas Sensor by Wet Process (습식방법에 의한 $SnO_2$ 반도체 가스센사 제조)

  • 전병식;김홍대;최병현;최성근
    • Journal of the Korean Ceramic Society
    • /
    • v.23 no.3
    • /
    • pp.53-61
    • /
    • 1986
  • A gas sensor which has been made by wet process had fabricated by coating each of the mixture on alumina tube and firing at 85$0^{\circ}C$ for 3hrs. A gas concentration such $H_2$, CO, $C_3H_8$, $C_2H_2$ and $CH_4$ vs its detection voltage characteristics has been in-vestigated on $SnO_2-In_2O_3-MgO$ system doped with PdO, $La_2O_3$, $ThO_2$, NiO and $Nb_2O_5$ The optimum sensitivity composition for various gases were 90w/o $SnO_2$-9w/o $In_2O_3$-1w/o MgO for $H_2$, $C_2H_2$ CO and $C_3H_8$ and 95w/o $SnO_2$-4w/o $In_2O_3$-1w/o MgO for $CH_4$. The sample which has been made by wet process than dry process had predominated sensitivity for each gases and particle size of the sample coprecipitated with PH=9 was 0.1${\mu}{\textrm}{m}$ The $SnO_2$-In2_O_3-MgO$ system doped with 2w/o $Nb_2O_5$ and NiO was the most sensitive for $H_2$ and $C_2H_2$ gas. In $SnO_2$-In2_O_3-MgO$ system doped with $ThO_2$ the sensitivity of $H_2$ gas was decreased but CO gas was in-creased when dopant con was increased.

  • PDF

Characterization of VO2 thick-film critical temperature sensors by heat treatment conditions (열처리조건에 따른 VO2 후막 급변온도센서의 특성연구)

  • Song, K.H.;Yoo, K.S.
    • Journal of Sensor Science and Technology
    • /
    • v.16 no.6
    • /
    • pp.407-412
    • /
    • 2007
  • For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.

Gas Sensing Characteristics of WO3:In2O3 Prepared by Ball-mill Time (볼밀시간에 의한 WO3:In2O3 가스센서의 감응특성)

  • Shin, Deuck-Jin;Yu, Yun-Sik;Park, Sung-Hyun;Yu, Il
    • Korean Journal of Materials Research
    • /
    • v.21 no.6
    • /
    • pp.299-302
    • /
    • 2011
  • [ $WO_3$ ]powders were ball-milled with an alumina ball for 0-72 hours. $In_2O_3$ doped $WO_3$ was prepared by soaking ball-milled $WO_3$ in an $InCl_3$ solution. The mixed powder was annealed at $700^{\circ}C$ for 30 min in an air atmosphere. A paste for screen-printing the thick film was prepared by mixing the $WO_3$:In2O3 powders with ${\alpha}$-terpinol and glycerol. $In_2O_3$ doped $WO_3$ thick films were fabricated into a gas sensor by a screen-printing method on alumina substrates. The structural properties of the $WO_3$:$InO_3$ thick films were a monoclinic phase with a (002) dominant orientation. The particle size of the $WO_3$:$InO_3$ decreased with the ball-milling time. The sensing characteristics of the $In_2O_3$ doped $WO_3$ were investigated by measuring the electrical resistance of each sensor in the test-box. The highest sensitivity to 5 ppm $CH_4$ gas and 5 ppm $CH_3CH_2CH_3$ gas was observed in the ball-milled $WO_3$:$InO_3$ gas sensors at 48 hours. The response time of $WO_3$:$In_2O_3$ gas sensors was 7 seconds and recovery time was 9 seconds for the methane gas.

The Characteristics of ZnO/SnO2 Sensing Materials by Ultrasonic and Hydrothermal Treatments to Volatile Organic Compounds (초음파 및 수열처리법에 의한 ZnO/SnO2 센서의 저농도 VOC 감응특성)

  • Yu, Joon-Boo;Do, Seung-Hoon;Byun, Hyung-Gi;Huh, Jeung-Soo
    • Journal of Sensor Science and Technology
    • /
    • v.21 no.6
    • /
    • pp.446-450
    • /
    • 2012
  • The important factors in sensors are sensitivity, selectivity, and response time. Oxide semiconductors are high sensitivity, fast response and the advantage of miniaturization. Zn-doped $SnO_2$ materials have been synthesized in order to improve the selectivity of the sensor. ZnO/$SnO_2$ crystals were prepared by a simple hydrothermal process and ultrasound pretreated hydrothermal process. ZnO/$SnO_2$ urchins were fabricated in the precursor solution with [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 and rod structures were fabricated ratio of 1:1 and 1:3. Surface area ratio was increased by increasing the ratio of [$Sn^{4+}$]. The sensitivity of sensors were highest at the [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 in ethanol, acetaldehyde, toluene, and nitric oxide.

Alcohol Detecting Characteristics of Catalytic Sensor (접촉연소식 센서의 알코올 검지 특성)

  • Kim, Jong-Won;Son, Young-Mok;Sim, Kyu-Sung;Park, Kee-Bae;Lee, Sang-Ho
    • Journal of Sensor Science and Technology
    • /
    • v.3 no.1
    • /
    • pp.32-39
    • /
    • 1994
  • Catalytic combustion type sensor was fabricated for alcohol detection, and its characteristics were tested. When the resistance of Pt coil for pellistor is 2.0 ohm, suggestible input power to bridge circuit was about 300 mW for methanol detection, and in the range from 350 mW to 400 mW for ethanol. Pellistors were prepared by means of impregnating Pt or Pd on the ${\gamma}$-alumina bead for sensing element, and transition metals such as $Co_{3}O_{4}$, $Fe_{2}O_{3}$ for compensating element.

  • PDF

A Scientific Approach for Improving Sensitivity and Selectivity of Miniature, Solid-state, Potentiometric Carbon Monoxide Gas Sensors by Differential Electrode Equilibria Mechanism (전극평형전위차 가스 센싱 메커니즘을 적용한 일산화탄소 소형 전위차센서의 특성 향상에 관한 연구)

  • Park, Jun-Young;Kim, Ji-Hyun;Park, Ka-Young;Wachsman, Eric D.
    • Journal of the Korean Ceramic Society
    • /
    • v.47 no.1
    • /
    • pp.92-96
    • /
    • 2010
  • Based on the differential electrode equilibria approach, potentiometric YSZ sensors with semiconducting oxide electrodes for CO detection are developed. To improve the selectivity, sensitivity and response-time of the sensor, our strategy includes (a) selection of an oxide with a semiconducting response to CO, (b) addition of other semiconducting materials, (c) addition of a catalyst (Pd), (d) utilization of combined p- and n-type electrodes in one sensor configuration, and (e) optimization of operating temperatures. Excellent sensing performance is obtained by a novel device structure incorporating $La_2CuO_4$ electrodes on one side and $TiO_2$-based electrodes on opposite substrate faces with Pt contacts. The resulting response produces additive effects for the individual $La_2CuO_4$ and $TiO_2$-based electrodes voltages, thereby realizing an even higher CO sensitivity. The device also is highly selective to CO versus NO with minor sensitivity for NO concentration, compared to a notably large CO sensitivity.

Oxygen-Response Ability of Hydrogen-Reduced Nanocrystalline Cerium Oxide

  • Lee, Dong-Won
    • Journal of Powder Materials
    • /
    • v.18 no.3
    • /
    • pp.250-255
    • /
    • 2011
  • The potential application of ultrafine cerium oxide (ceria, $CeO_2$) as an oxygen gas sensor has been investigated. Ceria was synthesized by a thermochemical process: first, a precursor powder was prepared by spray drying cerium-nitrate solution. Heat treatment in air was then performed to evaporate the volatile components in the precursor, thereby forming nanostructured $CeO_2$ having a size of approximately 20 nm and specific surface area of 100 $m^2/g$. After sintering with loosely compacted samples, hydrogen-reduction heat treatment was performed at 773K to increase the degree of non-stoichiometry, x, in $CeO_{2-x}$. In this manner, the electrical conductivity and oxygen-response ability could be enhanced by increasing the number of oxygen vacancies. After the hydrogen reduction at 773K, $CeO_{1.5}$ was obtained with nearly the same initial crystalline size and surface. The response time $t_{90}$ measured at room temperature was extremely short at 4 s as compared to 14 s for normally sintered $CeO_2$. We believe that this hydrogen-reduced ceria can perform capably as a high-performance oxygen sensor with good response abilities even at room temperature.