• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1534-1539
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• 2004

This experiment has been carried out to measure the process of droplet formation between water phase fluid(PVA 3%) and organic phase fluid(oil) and vector fields measured by a Dynamic Micro-PIV method in the inside of a droplet while generated. Droplet length controlled by changing flow rate conditions in microchannel. Water-in-oil(W/O) droplets successfully generated at a Y junction and cross microchannel. But oil-in-water(O/W) droplets could not be formed at a Y junction microchannel. That is, PVA 3% flow could not be detached from the PDMS surface and ran parallel with oil flow. When PVA 3% flow rate was constant, droplet length and time period decreased as oil flow rate increased, but droplet frequency increased. When PVA 3% and oil flow rate ratio was constant, droplet length and time period decreased as flow rate increased, but droplet frequency increased. All that case, Standard deviation of droplet formation have less than 5% at averaged droplet length and regular-sized droplets were reproducibly formed.

• Corrosion Science and Technology
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• 제2권5호
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• pp.238-242
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• 2003

The characteristics of Ru etching using $O_2/Cl_2$ plasmas were investigated by employing inductively coupled plasma (ICP) etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with the gas flow ratio, bias power, total gas flow rate, and source power were scrutinized. A high etching slope (${\sim}86^{\circ}$) and a smooth surface after etching was attained using $O_2/Cl_2$ inductively coupled plasma.

• 한국세라믹학회지
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• 제40권12호
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• pp.1165-1169
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• 2003

이중 이온빔 스퍼터링(Dual ion-beam sputtering)을 사용하여 보조이온건의 Ar/O$_2$가스유량 변화에 따라 Si-(III) 기판과 glass에 Ta$_2$O$_{5}$ 박막을 증착시켰다. 보조 이온총의 산소 가스량의 비가 감소함에 따라서 증착되는 Ta$_2$O$_{5}$ 박막의 성장속도는 감소하였으며, 굴절률은 $O_2$ 가스의 양이 0∼12sccm인 범위에서 2.09(at 1550nm)로 일정한 값을 나타내었다. Ar:O$_2$가 3: 12인 조건에서 화학양론 조성인 Ta$_2$O$_{5}$를 형성하였으며, 표면 거칠기도 가장 작은 값을 나타내었다.나타내었다.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.172-172
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• 2008

By thermal evaporation method, well-aligned ZnO nanowires were synthesized on sapphire substrate at $1000^{\circ}C$ with different oxygen flow rate by using pure ZnO powder (99.999 %). The as-synthesized ZnO nanowires were characterized by field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The well-aligned nanowires are single crystalline in nature and perpendicularly grown along the c-axis. Also the growth rate of nanowires, such as diameter and length, had a tendency to increase as oxygen flow rate increased. Based on the PL measurement of ZnO nanowires, we found that the near band edge of emission redshifted with the increasing intensity of the defect-related green emission in proportion to the increase of oxygen flow rate. "This research was supported by the Korea Research Foundation Grant funded by the Korean Government(MOEHRD)" (The Regional Research Universities Program/Chungbuk BIT Research-Oriented University Consortium).

• 한국재료학회지
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• 제9권2호
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• pp.144-148
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• 1999

We have studied the deposition characteristics of thick silicon dioxide film on Si substrate by $O_3$/TEOS APCVD(Atmospheric Pressure Chemical Vapor Deposition). The effect of deposition parameters such as the distance between showerhead and substrate, deposition temperature, TEOS flow rate and $O_3$/TEOS ratio on deposition rate, surface morphology, and properties of films as investigated. As deposition temperature increased, deposition rate decreased but the surface morphology and adhesion of film to substrate improved. As the distance between showerhead and substrate decreased, the deposition rate increased. Etching rate using the BOE increased as TEOS flow rate increased, but was independent of$ O_3$/TEOS ratio. Deposition rate of $5\mu\textrm{m}$/hour was obtained under the condition that the distance between showerhead and substrate was 5mm and the deposition temperature was $370^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

• 한국분말재료학회지
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• 제11권1호
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• pp.50-54
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• 2004

Nanoparticles of iron oxides have been prepared by the levitational gas condensation (LGC) method, and their structural and magnetic properties were studied by XRD, TEM and Mossbauer spectroscopy. Fe clusters were evaporated from a surface of the levitated liquid Fe droplet and then condensed into nanoparticles of iron oxide with particle size of 14 to 30 nm in a chamber filled with mixtures of Ar and $O_2$ gases. It was found that the phase transition from both $\gamma$-$Fe_2O_3$ and $\alpha$-Fe to $Fe_3O_4$, which was evaluated from the results of Mossbauer spectra, strongly depended on the $O_2$ flow rate. As a result, $\gamma$-$Fe_2O_3$ was synthesized under the $O_2$ flow rate of 0.1$\leq$$Vo_2$(Vmin)$\leq$0.15, whereas $Fe_3O_4$ was synthesized under the $O_2$, flow rate of 0.15$\leq$$Vo_2$(Vmin)$\leq$0.2.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 제33회 추계학술대회논문집
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• pp.119-122
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• 2009

본 연구는 친환경 추진제인 과산화수소($H_2O_2$)와 케로신을 추진제로 하는 액체 로켓 엔진에서의 막냉 각 장치 개발을 목적으로 이를 위하여 막냉각링을 설계/제작하고, 수류 시험을 통해 분무 특성과 공급 유량을 확인하였다. 또한 설계/제작된 막냉각링의 성능 예측을 위하여 열해석을 수행하였다. 수류 실험 결과 설계 유량(42.25g/s)이 공급됨을 확인하였고, 상대적으로 유속이 빠르고 홀 개수가 많은 막냉각링이 더 좋은 분무패턴을 보임을 확인하였다. 또한 열해석 결과 설계된 막냉각링이 충분한 냉각 성능을 가짐을 확인하였다.

• 한국분말재료학회지
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• 제10권6호
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• pp.448-455
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• 2003

$TiO_2$ nanopowder has been synthesized by means of the flame method using a precursor of titanium tetraisopropoxide (TTIP, Ti$(OC_3H_7)_4)$. In order to clarify the effect of cooling rate of hot flame on the formation of $TiO_2$ crystalline phases, the flame was controlled by varying the mixing ratio and the flow rate of gases. Anatase phase was predominantly synthesized under the condition having the steep cooling gradient in flame, while a slow cooling gradient enabled to form almost rutile $TiO_2$ nanopowder of above 95%.