Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth and photoluminescence characteristics of ZnO nanowire depending on deposition condition

증착조건에 따른 ZnO 나노와이어의 성장 및 photoluminescence 특성

  • Oh, Won-Seok (Department of Advanced Materials Engineering, Chungbuk National Univ.) ;
  • Jang, Gun-Eik (Department of Advanced Materials Engineering, Chungbuk National Univ.)
  • 오원석 (충북대학교 신소재공학과) ;
  • 장건익 (충북대학교 신소재공학과)
  • Published : 2008.06.19
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Abstract

By thermal evaporation method, well-aligned ZnO nanowires were synthesized on sapphire substrate at $1000^{\circ}C$ with different oxygen flow rate by using pure ZnO powder (99.999 %). The as-synthesized ZnO nanowires were characterized by field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The well-aligned nanowires are single crystalline in nature and perpendicularly grown along the c-axis. Also the growth rate of nanowires, such as diameter and length, had a tendency to increase as oxygen flow rate increased. Based on the PL measurement of ZnO nanowires, we found that the near band edge of emission redshifted with the increasing intensity of the defect-related green emission in proportion to the increase of oxygen flow rate. "This research was supported by the Korea Research Foundation Grant funded by the Korean Government(MOEHRD)" (The Regional Research Universities Program/Chungbuk BIT Research-Oriented University Consortium).

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