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http://dx.doi.org/10.4313/JKEM.2008.21.4.305

Improvement of Etch Rate and Profile by SF6, C4F8, O2 Gas Modulation  

Kwon, Soon-Il (충주대학교 전자공학과)
Yang, Kea-Joon (충주대학교 전자공학과)
Song, Woo-Chang (충주대학교 BINT 신기술 연구소)
Lim, Dong-Gun (충주대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.4, 2008 , pp. 305-310 More about this Journal
Abstract
Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.
Keywords
ICP-RIE; Dry etching; Etch rate$SF_6$$C_4F_8$;
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