• Journal of the Korean Chemical Society
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• v.51 no.3
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• pp.265-269
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• 2007

A comparative study on crystal structures and UV-visible diffuse reflectance spectra for Nb-containing oxyfluorides was performed to probe the relationship between energy band gap and local structure. The oxyfluorides, RbSrNb2O6F, RbCaNb2O6F and RbNb2O5F are commonly composed of the corner-sharing NbO5F octahedra as structural building units. The average Nb-O(F)-Nb bond angles, which can be a measure of the structural distortion, are 158.6° for RbSrNb2O6F, 149.6° for RbCaNb2O6F and 139.5° for RbNb2O5F. As the bond angle decreases, the band gap increases: 3.48eV for RbSrNb2O6F, 3.75eV for RbCaNb2O6F and 4.03 eV for RbNb2O5F. This experimental result implies that the band gap can be controlled with a range of 0.6 eV through a variation of local structure for the Nb-containing oxyfluorides.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.105-112
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• 2002

We studied the optical and structural properties of conventional and ion-beam-assisted-deposition (IBAD) Nb$_2$O$_{5}$ films which were evaporated by an electron beam gun. The vacuum-to-air spectral shift and the cross sectional SEM images of the Nb$_2$O$_{5}$ films were investigated. The results show that the IBAD Nb$_2$O$_{5}$ films have a higher packing density than the conventional Nb$_2$O$_{5}$ films. The average refractive index of IBAD Nb$_2$O$_{5}$ films was increased, while the extinction coefficient was decreased compared with the conventional films. As the oxygen flow was increased, the average refractive index and extinction coefficient of the conventional and IBAD films decreased. Both the conventional and IBAD Nb$_2$O$_{5}$ films showed inhomogeneity in refractive index, and the degree of inhomogeneity of the IBAD Nb$_2$O$_{5}$ films became larger as the ion current density was increased. All Nb$_2$O$_{5}$ films were found to be amorphous by x-ray diffraction (XRD) analysis, and hence the crystal structure of Nb$_2$O$_{5}$ films was not changed by IBAD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.127-130
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• 2001

The $BaTiO_3+xNb_2O_5$(x=6, 8, 10wt%) ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_3+Nb_2O_5$ ceramics with the sintering temperature and addition of $Nb_2O_5$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\theta}$ value of BT(110) peak was shifted to the lower degree and intensity of the $Ba_6Ti_2Nb_8O_{30}$ (133) peak was increased. Increasing the addition of $Nb_2O_5$, the intensity of $BaTiNb_4O_{13}$ (201) peak was decreased and $Ba_6Ti_2Nb_8O_{30}$ (133) peak was increased. The grain size of the $BaTiO_3+Nb_2O_5$ ceramics sintered at $1500^{\circ}C$ were almost uniform.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.422-428
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• 1991

The reaction sintering of Al2O3-ZrO2-Nb composite has been investigated using Al2O3, and ZrAl2 powders. Two kinds of specimens, 78.3Al2O3-14.0Nb2O5-7.7ZrAl2 in wt.% (AZN-5) and 72.3Al2O3-13.8Nb2O5-7.5ZrAl2-6.4ZrO2(AZN-10), were prepared. Powder compacts were sintered at various temperatures between 1$600^{\circ}C$ and 1$700^{\circ}C$ for 30 min in Ar. DTA and X-ray analysis have showen that a reaction between Nb2O5 and ZrAl2 started at 149$0^{\circ}C$ to form Al2O3, ZrO2, and Nb. The sintered density increased with the sintering temperature. AZN-10 specimen showed higher density than AZN-5 specimen for almost all the experimental conditions. Al2O3-ZrO2-Nb composite hot pressed after reaction sintering showed higher toughness and lower hardness than hot pressed Al2O3-ZrO2. The crack propagated through many metallic Nb particles which showed plastic deformation, and this is the cause of the increase in toughness of Al2O3-ZrO2-Nb composite over Al2O3-ZrO2.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.1008-1013
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• 2000

SrTi $O_3$(001) 단결정 기판 위에 졸-겔 스핀코팅으로 $SrBi_2(Ta,Nb)_2O_9$ 박막을 도포하고 그 결정화 과정을 고온 X-선 회절분석 (HTXRD)으로 추적하면서 Pt(111)/Ti/ $SiO_2$/Si 위에 성장한 박막과 비교하였다. SrTi $O_3$(001) 단결정 기판 위에 도포된 $SrBi_2Nb_2O_{9}$ 박막은 fluorite-like phase와 같은 transient phase를 거치지 않고 곧바로 순수한 $SrBi_2Nb_2O_9$ 상으로 결정화가 시작되었으며 결정화가 시작되는 온도인 ${\sim}540^{\circ}C$부터 c축 배향성장하였다. 또한 $SrB i_2(Ta,Nb)_2O_9$ 박막은 Ta/Nb 비에 관계없이 $SrTiO_3$(001) 위에서 모두 $(00{\ell})$로 배향되었으며, 코팅 횟수가 늘어나 필름의 두께가 증가함에 따라 c축 배향성은 미세한 감소를 보였다. $SrBi_2Nb_2O_9/SrTiO_3$단면을 TEM으로 관찰한 결과 $SrBi_2Nb_2O_9$은 대체로 불규칙한 크기의 다결정체로 되어 있었으나 계면 부근에서는 [001]$_{SBN}$//[001]$_{SrTi}$ $O_3$/, [100]$_{SBN}$//[100]$_{SrTi}$ $O_3$/라는 결정학적 관계를 가지며 에피탁샬 성장했음을 알 수 있었다.있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.295-304
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• 1995

Stabilization of the perovskite phase and sequence of reactions occuring during calcination were studied with solid solutions formed between Pb(Zn1/3Nb2/3)O3 and Pb(Fe1/2Nb1/2)O3. In the PZN-PFN composition of equal molar ratio, rhombohedral type pyrochlore phase (Pb2Nb2O7) and PbO-rich distorted cubic type pyrochlore phase (Pb3Nb2O8) were coexisted as intermediate phases at temperatures below 85$0^{\circ}C$, and these phases transformed to a stable cubic type pyrochlore phase, Pb3Nb4O13 solid solution and a perovskite solid solution at temperatures above 85$0^{\circ}C$. The major stable phase as increasing sintering temperatures was a perovskite phase in this binary system and prominent suppression of the pyrochlore phase was achieved by substituting Zn2+ with Fe3+ or by increasing sintering temperature. The composition containing 20mol% PZN possessed the best dielectric properties, and the dissipation factor was lower than 5% in all compositions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.120-123
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• 2005

The 5 mol% ZnO doped $LiNbO_3$ film and the 2 mol% MgO doped $LiNbO_3$ film were grown on the $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method with $Li_2CO_3-V_2O_5$ flux system. The crytsallinity and the lattice mismatch between $Zn:LiNbO_3$, film and $Mg:LiNbO_3$, film were analyzed by x-ray rocking curve (XRC). In addition, the ZnO and MgO distribution in the cross-section of the multilayer thin films was observed using electron probe micro analyzer (EPMA).