• Journal of Ocean Engineering and Technology
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• v.13 no.4 s.35
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• pp.55-62
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• 1999

Cold rolled steel has much plastic strain in the material surface produced by manufacturing process. The strain causes the variation of surface residual stress, in which influences the fatigue behavior under repeated loading. As experimental results, it was confirmed that the behavior of residual stress ${\sigma}_r$, with cycle N consisted of three stages except stress amplitude near fatigue limit in SPCC steel. On the first stage compressive residual stress decreased rapidly, on the second stage gradually, and on the last stage slightly. The relation between ${\sigma}_r$, and log N appeared linear behavior except the early part of cycle ratio $N/N_f$. The average gradient of ${\sigma}_r$, with respect to log N seemed to take a constant value without initial cycle ratio. On the other hand, the $N_f$ line was regressed by the first-order polynomial equation on ${\sigma}_r-log\;N_f$ diagram. Therefore, this study showed that both the gradient of ${\sigma}_r$, with respect to log N and the $N_f$ line was useful in predicting the cycle ratio $N/N_f$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• East Asian mathematical journal
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• v.19 no.2
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• pp.165-171
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• 2003

We show that any F-harmonic map from a compact manifold M to N is necessarily constant if N possesses a strictly-convex function, and prove 'Liouville type theorems' for F-harmonic maps. Finally, when the target manifold is the real line, we get a result for F-subharmonic functions.

• Journal of the Korean Mathematical Society
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• v.52 no.5
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• pp.991-1001
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• 2015

In this work we obtain conditions for nonspecial line bundles on general ${\kappa}$-gonal curves failing to be normally generated. Let L be a nonspecial very ample line bundle on a general ${\kappa}$-gonal curve X with ${\kappa}{\geq}4$ and $deg\mathcal{L}{\geq}{\frac{3}{2}}g+{\frac{g-2}{{\kappa}}}+1$. If L fails to be normally generated, then L is isomorphic to $\mathcal{K}_X-(ng^1_{\kappa}+B)+R$ for some $n{\geq}1$, B and R satisfying (1) $h^0(R)=h^0(B)=1$, (2) $n+3{\leq}degR{\leq}2n+2$, (3) $deg(R{\cap}F){\leq}1$ for any $F{\in}g^1_k $. Its converse also holds under some additional restrictions. As a corollary, a very ample line bundle $\mathcal{L}{\simeq}\mathcal{K}_X-g^0_d+{\xi}^0_e$ is normally generated if $g^0_d{\in}X^{(d)}$ and ${\xi}^0_e{\in}X^{(e)}$ satisfy $d{\leq}{\frac{g}{2}}-{\frac{g-2}{\kappa}}-3$, supp$(g^0_d{\cap}{\xi}^0_e)={\phi}$ and deg$(g^0_d{\cap}F){\leq}{\kappa}-2$ for any $F{\in}g^1_k$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Journal of Power System Engineering
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• v.3 no.3
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• pp.70-75
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• 1999

This study is for the development of tie rod end, a parts of steering system, that would be changed with plastic material. The position of weld line is founded by the analysis of Mold Flow, computer software with FEM(Finite Element Method). Then new mold is designed by consideration with the locations of weld line. PA66(G/F 35%), PA6(G/F 45%), PET(G/F 45%) and PET(G/F 55%) are tested two types loading conditions for selecting suitable material, the requirement tensile load(more 19600N). PA6(G/F 45%) showed high mechanical properties in this study. And then, tensile strength was compared between conventional metal products and the injection molded products which were reinforced with 33%, 34%, 45%. 60% of glass fiber in matrix material. In the case of, the measured two types of tensile load values are 24500N (Method-1), 21560N (Method-2) and weight is decreased by 50% of conventional one.

• Bulletin of the Korean Mathematical Society
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• v.27 no.2
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• pp.127-131
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• 1990

Let f:R.rarw.R be a continuous function on the real line R, and denote the n-th iterate of f by f$^{n}$ :f$^{1}$=f and f$^{n}$ =f.f$^{n-1}$ for n>1. A point x.mem.R is a periodic point of f of period k>0 if f$^{k}$ (x)=x but f$^{i}$ (x).neq.x for all 01, then it must also have a fixed point, by the intermediate Theorem. Also the question has an intriguing answer which was found by ths Russian mathematician Sharkovky [6] in 1964.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.6
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• pp.2555-2559
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• 2015

Purpose: To investigate effects of the TESTIN (TES) gene on proliferation and migration of highly metastatic nasopharyngeal carcinoma cell line 5-8F and the related mechanisms. Materials and Methods: The target gene of human nasopharyngeal carcinoma cell line 5-8F was amplified by PCR and cloned into the empty plasmid pEGFP-N1 to construct a eukaryotic expression vector pEGFP-N1-TES. This was then transfected into 5-8F cells. MTT assays, flow cytometry and scratch wound tests were used to detect the proliferation and migration of transfected 5-8F cells. Results: A cell model with stable and high expression of TES gene was successfully established. MTT assays showed that the OD value of 5-8F/TES cells was markedly lower than that of 5-8F/GFP cells and 5-8F cells (p<0.05). Flow cytometry showed that the apoptosis rate of 5-8F/TES cells was prominently increased compared with 5-8F/GFP cells and 5-8F cells (p<0.05). In vitro scratch wound assays showed that, the width of the wound area of 5-8F/TES cells narrowed slightly, while the width of the wound area of 5-8F/ GFP cells and 5-8F cells narrowed sharply, suggesting that the TES overexpression could inhibit the migration ability. Conclusions: TES gene expression remarkably inhibits the proliferation of human nasopharyngeal carcinoma cell line 5-8F and reduces its migration in vitro. Thus, it may be a potential tumor suppressor gene for nasopharyngeal carcinoma.

• Journal of the Korean Society of Clothing and Textiles
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• v.22 no.1
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• pp.41-48
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• 1998

An investigation made of the easing contraction ratio according to sewing conditions (eased seam angle; 0$^{\circ}$ 20$^{\circ}$ 30$^{\circ}$ 45$^{\circ}$ 60$^{\circ}$ 70$^{\circ}$ 90$^{\circ}$, stitch density; 38 stitches/3 cm(N1.0), 26 stitches/ 3 cm(N1.5), 19 stitches/3 cm(N2.0), 14 stitches/3 cm(N2.5), 12 stitches/3 cm(N3.0), thread; sp 60' s/2) by lockstitch industrial sewing machine with shirring foot. The results abstained were as follows: 1. The lower the stitch density , the higher the easing contraction ratio. 2. The easing contraction ratio at 0$^{\circ}$ and 90$^{\circ}$ were lower than bias angles (20$^{\circ}$, 30$^{\circ}$, 45$^{\circ}$, 60$^{\circ}$, 70$^{\circ}$). 3. As the results of visual test, the maximum easing conditions were Fl -0$^{\circ}$.20$^{\circ}$.30$^{\circ}$.45$^{\circ}$-12 stitches/3 cm(N3.0), 60$^{\circ}$. 70$^{\circ}$. 90$^{\circ}$-14 stitches/3 cm(N2.5), F2 -0$^{\circ}$. 20$^{\circ}$.30$^{\circ}$.60$^{\circ}$.70$^{\circ}$.90$^{\circ}$-19 stitches/ 3 cm(N2.0), 45$^{\circ}$ -14 stitches/3 cm(N2.5), and F3 -0$^{\circ}$.20$^{\circ}$.30$^{\circ}$.45$^{\circ}$.60$^{\circ}$.70$^{\circ}$.90$^{\circ}$-19 stitches/3 cm (N2.0). 4. Approximately easing contraction ratio was obtained as 2.0% (N1.0)~ 10.2% (N3.0) in F1, 6.7% (N1.0)~ 15.7% (N2.0) in F2, and 5.2% (N1.0)~ 12.1% (N2.0) in F3, according to different angles on the sleeve cap curve line. 5. As a resets of SPSS PC) statistics analysis, it confirmed the relations which were observed between easing contration ratio and stitch density, and easing contraction ratio was correlated with bending properties.

• Bulletin of the Korean Chemical Society
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• v.23 no.12
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• pp.1769-1772
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• 2002

Previous $^{19}F\;and\;^{1,2}H$ electron-nuclear double resonance (ENDOR) study of fluorometmyoglobin (MbF) in frozen-solution state provided sensitive tools sensing subtle structural changes of the heme that are not obtainable from X-ray. [Fann et al., J. Am. Chem. Soc. 1995, 117, 6019] Because of the intrinsic inhomogeneouse EPR line broadening effect of MbF in frozen-solution state, detection of the intrinsic inhomogeneouse EPR line broadening effect of MbF in frozen-solution state, detection of the electronic and geometrical changes of the heme ring itself and the proximal histidine by using $^{14}N$ CW ENDOR was interfered. In the present study, hyperfine-sensitive $^{14}N$ Mims ENDOR technique of pulsed-EPR was employed to probe the changes. With two different $\tau$ values of 128 and 196 ns, $^{14}N$ ENDOR signals of the heme and proximal histidine were completely resolved at $g'_{II}(=g_e=2)$. This study present that X-band $^{14}N$ Mims ENDOR sequence can sensitively detect the small changes of the spin densities and p orbital populations of the proximal and the heme nitrogens, caused by ligand and pH variation of the distal site.