• 한국세라믹학회지
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• 제24권3호
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1304-1307
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• 1997

A hydrogen gas sensor utilizing Pt/$SnO_2$ system was fabricated by the pressed pellet method. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with Electron Diffraction Analysis, Transmission Electron Microscopy, Scanning Electron Microscopy. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30sccm (a mixture of $0.5%H_2$ in $N_2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. $H_2$ gas sensing properties of Pt/$SnO_2$ were investigated at several temperatures. As a result, it was observed that Pt/$SnO_2$ has high sensitivity at $300^{\circ}C$ and $400^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.468-470
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• 1999

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.75-78
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• 1996

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.589-593
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• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• Journal of Korean Vacuum Science & Technology
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• 제4권4호
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• pp.97-101
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• 2000

In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at ($N_2$+O$_2$) atmosphere was lower than those sputtered at (Ar +O$_2$) atmosphere: 1.9$\times$10$^{-8}$ A/cm$^2$ at 2V for the films prepared at (Ar +O$_2$) atmosphere and 8.6$\times$10$^{-9}$ A/cm$^2$ for the films at ($N_2$+O$_2$) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at ($N_2$+O$_2$) atmosphere have superior electrical properties to the films sputtered at (Ar +O$_2$), without any significant structural changes.

• 멤브레인
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• 제28권6호
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• pp.424-431
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• 2018

Cobalt tetraphenylporphyrin-benzylimidazole (CoTpp-BIm)을 산소 운반체로 이용하여 polyethersulfone (PES)와의 혼합물을 기반으로 하는 혼합 구조의 평판형 분리막의 기체 분리 성능을 조사하였다. CoTpp-BIm이 혼합된 PES막은 손가락 구조와 스폰지형 구조가 혼합된 비대칭 구조를 가졌고, 상부표면은 치밀한 형태를 보였다. 기체분리 성능 실험은 94%의 $N_2$ 기체에 6%의 $O_2$가 혼합된 기체를 사용하여 평가하였다. 산소 및 질소 투과율은 ${\Delta}P$가 15~228 cmHg 범위에서 실험하였고, PES막의 투과면은 진공수준으로 유지되었다. CoTpp-BIm이 혼합된 PES막의 산소 투과율은 공급 압력이 감소함에 따라 증가하였다. 공급 압력이 15 cmHg일 때 산소 투과율($P_{O_2}$)는 6676 Barrer이었고, $O_2/N_2$ 선택도(${\alpha}$)는 6.1, 촉진인자(F)는 2.39까지 증가하였다. 이를 바탕으로 PES막에 CoTpp-BIm을 첨가하면 산소분리 특성이 향상되는 것을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1149-1151
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• 1995

In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

• 멤브레인
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• 제10권2호
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• pp.55-65
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• 2000

다공성 실리카 막을 졸겔법에 의해서 Si(${OC}_2H_5)_4-H_2O$ 로부터 제조하고, 막의 특성을 TG-DTA, XRD, IR, BET, SEN, TEM을 사용하여 조사하였다. 다공성 실리카 막 제조를 위한 Si(${OC}_2H_5)_4$ : $H_2O4$ : $H_2O$ : $C_2H_5{OH}$의 최적 몰비는 1 : 4.5 : 4 이었다. 100$^{\circ}C$~1100$^{\circ}C$~에서 열처리된 막의 비표면적은 3.8 $m^2$/g~902.3$m^2$/g 이었으며, 기공크기는 20$\AA$~50$\AA$이었다. 300$^{\circ}C$~~700$^{\circ}C$~범위에서 열처리된 막의 입자크기는 15nm~30nm이며, 열처리 온도가 증가하면 입자의 크기도 증가하였다. 이렇게 제조한 다공성 실리카 막으로 $H_2$/$N_2$ 혼합기체를 분리하는데 응용하였으며, 다공성 실리카 막에 의한 $H_2$/$N_2$혼합기체분리는 Knudsen flow와 surface flow에 의해서 일어나며 주로 surface flow에 의존하였다. 다공성 실리카 막의 $H_2$/$N_2$ 혼합기체에 대한 real separation factor($\alpha$)는 155.15 cmHg($\Delta$P)와 $25^{\circ}C$에서 5.17이었으며, real separation factor($\alpha$), head separation factor ($\beta$), tail separation factor$\bar{B}$)는 압력이 증가하면 증가하였다.