• 한국표면공학회지
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• 제42권4호
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• pp.169-172
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• 2009

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

• Journal of Advanced Marine Engineering and Technology
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• 제22권5호
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• pp.712-720
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• 1998

The effect of H2:N2 gas ratio on the case thickness hardness and nitrides formation in the sur-face of SCM440 machine structural steel have been studied by micro-pulse plasma process. The thickness of compound layer increased with the increase of nitrogen content in the gas com-position. The maximum thickness of compound layer the maximum case depth and the maximum surface hardness were about 15.8${\mu}m$, 400${\mu}m$ and Hv765 respectively in the nitriding condition of 250Pa and 70% nitrogen content at $520^{\circ}C$ for 7hrs. Generally only nitride phases such as ${\'{\gamma}}$($Fe_4N$)$\varepsilon(Fe_2}{_3N}$ phases were detected in compound and diffusion layer by XRD analysis. The amount of $\varepsilon(Fe_2}{_3N}$ phase increased with the increase of nitrogen content. The relative amounts and kind of phases formed in the nitrided case changed with the change of nitrogen content in the gas composition.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.13-17
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• 2011

We have developed a new energy-consuming monitoring system that has made it possible to measure the energy consumption of a gas scrubber, one of semiconductor processing equipments, and installed this system to the gas scrubber under operating at a manufacture site. Using this system, we have measured consumptions of electric power and processing gas consumed at standby to operating mode. In case of the gas scrubber, processing gas flows continuously into it at standby and operating mode. Therefore, if the electric power has been supplied, the processing gas can flows into the device for 24 hours. Moreover, at operating of gas scrubber, the amount of electricity consumption is 5 kWh. At Standby of gas scrubber, it spends 3kwh. It is certain that the energy consumption is greater at operating mode than at standby mode. The carbon emission rates from 24 hour gas scrubber operation are 236 $kgCO_2$/day of $N_2$, 57 $kgCO_2$/day of electric power and 0.001 $kgCO_2$/day of cooling water. Most of carbon is emitted from $N_2$ gas and electric power consumption.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.16-21
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• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• 멤브레인
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• 제2권2호
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• pp.135-143
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• 1992

여러가지 고분자막을 이용하여 $N_2-SO_2$ 혼합기체를 분리하는 데 있어서 압력, 온도 등을 조작변수로 하여 투과계수와 분리인자를 계산하고 이에 따른 기체투과 특성을 규명하고 분리성능을 측정하였다. 실험한 압력의 범위는 0.1~1.0 MPa이었으며, 온도범위는 283~303 K이었다. 압력이 커질수록 투과계수와 분리인자가 증가하였으나, 온도증가에 따라 투과계수와 분리인자는 감소하였다. 본 실험에서 사용된 막 중 Film-Tech사의 FT-30이 $N_2-SO_2$ 혼합기체의 분리능력이 가장 뛰어난 것으로 나타났다.

• 조명전기설비학회논문지
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• 제29권6호
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• pp.49-57
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• 2015

This paper presents the discharge characteristics and economic feasibility of a Dry $Air/O_2$ and a $N_2/O_2$ mixture gas in order to review $SF_6$ alternative. From AC discharge experiment in an quasi-uniform field, it was found that the optimal $N_2/O_2$ mixing ratio which breakdown voltage and surface flashover voltage were the highest was 70/30 and that the pressure dependence on the breakdown voltage was higher than that of the surface flashover voltage in the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas. The mixing ratio (70/30) and the tendency of the pressure dependence were described in detail based on physical factors (impact ionization coefficient, electron attachment coefficient, secondary electron emission coefficient) involved in discharge mechanism and a electron source, respectively. In addition, the performance insulation and the economic feasibility of the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas were discussed so that Dry $Air/O_2$ mixture gaswas more suitable than $N_2/O_2$ mixture gas to the $SF_6$ alternative.

• 조명전기설비학회논문지
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• 제26권3호
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• pp.9-15
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• 2012

In this paper, we deal with a surface discharge that caused an aggravation of the dielectric strength in the $N_2/O_2$ mixture gas, When composit dielectrics were formed from the use of a solid dielectric. It was found from this study that the surface discharge voltage was deeply involved in the mixture ratio of $O_2$, the electrical property of the solid dielectric, kind of the solid dielectric, an electric field at the triple junction and a medium effect. These results expect basic data that will be used to transmission and distribution power system equipment using the $N_2/O_2$ mixture gas.

• 멤브레인
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• 제28권4호
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• pp.233-242
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• 2018

본 연구는 GO (graphene oxide)를 활용한 기체 분리막 연구를 위해 PEBAX [poly(ether-block-amide)]에 GO를 첨가하여 PEBAX-GO 고분자 복합막을 제조하고, 이 복합막을 통해 $H_2$, $N_2$, $CH_4$, $CO_2$에 대한 기체투과 특성을 연구하였다. 기체투과 실험결과 PEBAX-GO 복합막에 대해 $N_2$, $CH_4$, $CO_2$의 기체투과도는 GO 함량이 증가함에 따라 점차 감소하였다. 반면 $H_2$의 기체투과도는 GO 함량이 증가함에 따라 증가하였고, GO 함량 30 wt%에서는 21.43 barrer로 단일막에 비하여 약 5배가 증가하였는데 GO는 $H_2$에 대해 다른 기체들에 비해 빠르고 선택적인 기체운송 channel로 더 용이하게 작용하였기 때문이다. 증가된 선택도($H_2/N_2$)와 선택도($H_2/CH_4$)는 투과기체 크기에 의한 확산선택도가, 증가된 선택도($CO_2/N_2$)와 선택도($CO_2/CH_4$)는 $CO_2$와 GO의 -COOH와의 친화성으로 용해선택성이 더 크게 영향을 미친 것으로 나타났다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1994년도 특별강연 및 춘계학술발표 개요집
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• pp.152-154
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• 1994