• Journal of Powder Materials
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• v.3 no.3
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• pp.181-187
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• 1996

Cobalt and VC powders were ball milled with M2 grade high speed steel powders under various ball to powder ratios. The powders milled under higher ball to powder ratio become finer, more irregular and have a broader size distribution, and thus possess a lower compressibility and a better sinterability regarding densification. Increasing the ball to powder ratio lowered the sintering temperature to obtain the density level necessary to isolate all the pores. Lowering the sintering temperature is very critical to maintain fine microstructure since grain and carbide coarsening are accelerated by higher sintering temperature due to more liquid phase formation. The powders obtained by ball milling at 20 to 1 ratio has the lowest compressibility but has the best sinterability, almost compatible to unmilled pure M2 powders. A sintered body over 97% theoretical density with fine microstructures having average grain size of ~10 microns was obtained from the powder by sintering at 1260 $^{\circ}C$ for 1 hour in vacuum. XRD results indicate that two types of carbides are mainly present in the sintered structure, MC and $M_{6}C$ type. The MC type carbides are more or less round shaped and mainly located at the grain boundaries whereas the $M_{6}C$ type are angular shaped and mainly located inside the grains.

• Corrosion Science and Technology
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• v.2 no.2
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• pp.59-67
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• 2003

Electrochemical potentiokinetic reactivation (EPR) tests are used to evaluate the degree of sensitization (DOS) of stainless steels and nickel base alloys. The validity of EPR test to detect DOS of these alloys, however, depends all the electrolyte composition employed. The existence of precipitates such as NbC, and TiC, etc. in the alloys also affects the reactivation behaviors of these alloys. In this investigation, the reactions involved during EPR processes are analyzed. In 0.5 M $H_2SO_4$+ 0.01 M KSCN electrolyte, a reactivation peak associated with the localized attack around NbC, different from that of intergranular corrosion, is observed for the solution annealed 347 SS. For solution annealed Alloy 600, matrix corrosion and localized attack around TiC with distinct anodic peaks appeared in the EPR curves are seen in the $H_2SO_4$+ KSCN electrolyte. With proper adjustment of elect rolyte composition, the contribution from intergranular corrosion, as a result of chromium carbide precipitation along the grain boundaries, can be distingui shed from the matrix and localized corrosion for the sensitized Alloy 600.

• Journal of Powder Materials
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• v.20 no.2
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• pp.100-106
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• 2013

Ultra-fine zirconium carbide (ZrC) powder with nano-sized primary particles was synthesized by the carbothermal reduction method by using nano-sized $ZrO_2$ and nano-sized graphite powders mixture. The synthesized ZrC powder was well dispersed after simple milling process. After heat-treatment at $1500^{\circ}C$ for 2 h under vacuum, ultra-fine ZrC powder agglomerates (average size, $4.2{\mu}m$) were facilely obtained with rounded particle shape and particle size of ~200 nm. Ultra-fine ZrC powder with an average particle size of 316 nm was obtained after ball milling process in a planetary mill for 30 minutes from the agglomerated ZrC powder.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.135-140
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• 1997

The influences of ZrB$_2$ additions to SiC on microstructural, DDM(Electrical Discharge Machining), mechanical and electrical properties were investigated. composites were prepared by adding 15, 30, 45 vol.% ZrB$_2$particles as a second phase to SiC matrix. SiC-ZrB$_2$ composites obtained by hot pressing for high temperature structural application were fully dense with the relative densities over 99%. The fracture toughness of the composites were increased with the ZrB$_2$contents. In case of composite containing 30vol.% ZrB$_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to that of monolithic SiC sample. The electrical resistivities of SiC-ZrB$_2$ composites decreased significantly with the ZrB$_2$ contents. The electrical resistivity of SiC-30vol.% ZrB$_2$ composite showed 6.50$\times$10$^{-4}$ $\Omega$.cm. Cutting velocity of EDM of SiC-ZrB$_2$ composites are directly proportional to duty factor of pulse width. Surface roughness, however, are not all proportional to pulse width. Higher-flexural strength composites show a trend toward smaller crater volumes, leaving a smoother surface; the average surface roughness of the SiC-ZrB$_2$ 15 vol.% composite with the flexural strengthe of 375㎫ was 3.2${\mu}{\textrm}{m}$, whereas the SiC-ZrB$_2$ 30.vol% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$ composites, the SiC-ZrB$_2$ two phases are distinct; the white phase is the ZrB$_2$and the gray phase is the SiC matrix. In the SEM micrographs of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present. It is shown that SiC-ZrB$_2$ composites are able to be machined without surface cracking.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.567-571
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• 2008

The properties of a grown film by the chemical vapor deposition process depend on the deposition temperature because the deposition mechanism of the CVD film is controlled by the deposition temperature. The preferred orientation of the zrC film changed from (111) to (220) or (200) with an increase of the deposition temperature. The grain size of the ZrC film changes from $0.8{\mu}m$ to $2.5{\mu}m$ in the range of 1350 to $1500^{\circ}C$. The hardness of the deposited ZrC film depended on the preferred orientation and the grain size. The hardness of the ZrC film deposited at $1400^{\circ}C$ was 31 GPa.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1094-1101
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• 1999

Liquid phase sintered silicon carbides were obtained by sintering of $\alpha$-SiC and $\beta$-SiC powders as starting materials at 2173K and 2273K respectively. The SiCplatelet seeds of different sizes were obtained by a repeated ball milling and sedimentation. Their mean size (d50) were 2.217 ${\mu}{\textrm}{m}$ 13.67 ${\mu}{\textrm}{m}$, 22.17${\mu}{\textrm}{m}$ respectively 6wt%Al2O3-4 wt% Y2O3 was used as the sintering additives for the liquid phase sintering. The two silicon carbides had a bimodal microstructure consisting of small matrix grains and large platelike grains when the SiCplatelet seeds were added. In the case of the $\beta$-SiC the appreciable phase transformation occurred as sintering temperature increased from 2173K to 2273K and resulted in matrix shape change from equiaxed into platelike grains. In contrast there was no shape change for the $\alpha$-SiC. The size of large grains in the $\alpha$-SiC of large grains in the $\alpha$-SiC was larger than that of the large grains in the $\beta$-SiC These results suggested that the growth of the $\alpha$-SiCplatelet in the $\alpha$-SiC matrix was more favored than that of the $\alpha$-SiCplatelet in the $\beta$-SiC matix. The three point flexural strength decreased as the added seed size increased. Fracture toughness values of samples sintered at 2273K were higher than those of samples sintered at 2173K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.724-728
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• 2004

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.892-895
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• 2003

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. During RIE of 3C-SiC films in this work, $CHF_3$ gas is used to form of polymer as a side wall for excellent anisotropy etching. From this process, etch rates are obtained a $60{\sim}980{\AA}/min$ by various conditions such as $CHF_3$ gas flux, $O_2$ addition ratio, RF power and electrode distance. Also, approximately $40^{\circ}$ mesa structures are successfully formed at 100 mTorr $CHF_3$ gas flow ratio, 200 W RF power and 30 mm electrode distance. Moreover, vertical side wall is fabricated by anisotropy etching with 50% $O_2$ addition ratio and 25 mm electrode distance. Therefore, RIE of 3C-SiC films using $CHF_3$ could be applicable as fabrication process technology for high-temperature 3C-SiC MEMS applications.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.121-127
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• 2017

Gadolinium tetraboride ($GdB_4$) was synthesized by reduction of $Gd_2O_3$ using boron carbide in presence of carbon. Effect of temperature on product quality was investigated. Pure $GdB_4$ powder was obtained in vacuum at $1500^{\circ}C$. Pressureless sintering experiments revealed that sintering takes place only above $1600^{\circ}C$. A maximum density of 77.1% of the theoretical value was obtained at $1800^{\circ}C$ by pressureless sintering. Hot pressing resulted in 95.5% of theoretical density at the lower temperature of $1700^{\circ}C$ under 35 MPa pressure. Hardness and fracture toughness of dense $GdB_4$ were measured and found to be 21.4 GPa and $2.3MPa{\cdot}m^{1/2}$, respectively. After exposure to air at $900^{\circ}C$, the formation of a porous and non-protective oxide layer was observed.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.152-156
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• 2007

Tungsten carbide powder was synthesized by SHS (self-propagating high-temperature synthesis). Except $WO_{3}$, each concentration of raw material ($WO_{3},\;Mg,\;NaCl,\;Na_{2}CO_{3},\;C$) was investigated. Final product was characterized by XRD and SEM. X-ray data demonstrated that the $NaCl+Na_{2}CO_{3}$ combined mixture has superiority in the WC formation process. Single phase and submicrometer WC powder was synthesized at the temperature below $1600^{\circ}C$. The role of sodium salts in combustion process was discussed, and chemical mechanism of WC formation was proposed. WC powder prepared by salt-assisted combustion synthesis has a size $0.2{\sim}3\;{\mu}m$ and low agglomeration degree.